VISHAY VLMSY3420-GS18

VLMSY3420
Vishay Semiconductors
Bicolor SMD LED PLCC-4
FEATURES
• SMD LED with exceptional brightness
• Multicolored
• Luminous intensity categorized
e3
• EIA and ICE standard package
• Compatible with automatic placement
equipment
• Compatible with IR reflow, vapor phase and wave
soldering processes according to CECC 00802 and
J-STD-020C
• Available in 8 mm tape
• Low profile package
• Non-diffused lens: excellent for coupling to light
pipes and backlighting
• Low power consumption
• Luminous intensity ratio in one packaging unit
IVmax/IVmin ≤ 1.6
• Lead (Pb)-free device
• Preconditioning: according to JEDEC level 2a
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
• ESD-withstand voltage: up to 2 kV according to
JESD22-A114-B
• Automotive qualified AEC-Q101
19211
DESCRIPTION
These devices have been designed to meet the
increasing demand for surface mounting technology.
The package of the VLMSY3420 is the PLCC-4.
It consists of a lead frame which is embedded in a
white thermoplast. The reflector inside this package is
filled up with clear epoxy.
This SMD device consists of a red and yellow chip. So
it is possible to choose the color in one device.
APPLICATIONS
• Automotive: backlighting in dashboards and
switches
• Telecommunication: indicator and backlighting in
telephone and fax
• Indicator and backlight in office equipment
• Flat backlight for LCDs, switches and symbols
• General use
PRODUCT GROUP AND PACKAGE DATA
• Product group: LED
• Package: SMD PLCC-4
• Product series: bicolor
• Angle of half intensity: ± 60°
PARTS TABLE
PART
COLOR, LUMINOUS INTENSITY
TECHNOLOGY
VLMSY3420-GS08
Red, IV = (224 to 900) mcd
Yellow, IV = (280 to 1120) mcd
AlInGaP on GaAs
VLMSY3420-GS18
Red, IV = (224 to 900) mcd
Yellow, IV = (280 to 1120) mcd
AlInGaP on GaAs
Document Number 81305
Rev. 1.3, 10-Jul-08
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VLMSY3420
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS 1) VLMSY3420
PARAMETER
Reverse voltage per diode 2)
DC Forward current per diode
TEST CONDITION
SYMBOL
VALUE
IR = 10 µA
VR
5
UNIT
V
Tamb ≤ 65 °C
IF
50
mA
IFSM
0.1
A
Power dissipation per diode
PV
130
mW
Junction temperature
Tj
125
°C
Operating temperature range
Tamb
- 40 to + 100
°C
Storage temperature range
Tstg
- 40 to + 100
°C
RthJA
480
650
K/W
Surge forward current per diode
Thermal resistance junction/
ambient
mounted on PC board
(pad size > 16 mm2)
1 chip on
2 chips on
Note:
1) Tamb = 25 °C, unless otherwise specified
2) Driving the LED in reverse direction is suitable for short term application
OPTICAL AND ELECTRICAL CHARACTERISTICS 1) VLMSY3420, SUPERRED
TEST CONDITION
PART
SYMBOL
MIN.
Luminous intensity
PARAMETER
IF = 50 mA
VLMSY3420
IV
224
Dominant wavelength
IF = 50 mA
λd
630
Peak wavelength
IF = 50 mA
λp
643
nm
Angle of half intensity
IF = 50 mA
ϕ
± 60
deg
Forward voltage
IF = 50 mA
VF
2.1
Reverse current
VR = 5 V,
IR
VR = 0 V, f = 1 MHz
Cj
Junction capacitance
TYP.
MAX.
UNIT
900
mcd
nm
2.6
V
10
µA
15
pF
Note:
1) Tamb = 25 °C, unless otherwise specified
OPTICAL AND ELECTRICAL CHARACTERISTICS 1) VLMSY3420, YELLOW
TEST CONDITION
PART
SYMBOL
MIN.
Luminous intensity
PARAMETER
IF = 50 mA
VLMSY3420
IV
280
TYP.
Dominant wavelength
IF = 50 mA
λd
581
Peak wavelength
IF = 50 mA
λp
590
588
Angle of half intensity
IF = 50 mA
ϕ
± 60
Forward voltage
IF = 50 mA
VF
2.1
Reverse current
VR = 5 V,
IR
VR = 0 V, f = 1 MHz
Cj
Junction capacitance
15
MAX.
UNIT
1120
mcd
594
nm
nm
deg
2.6
V
10
µA
pF
Note:
1) Tamb = 25 °C, unless otherwise specified
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For technical support, please contact: [email protected]
Document Number 81305
Rev. 1.3, 10-Jul-08
VLMSY3420
Vishay Semiconductors
LUMINOUS INTENSITY CLASSIFICATION AND GROUP COMBINATIONS 1) VLMSY3420
RED
Y
E
L
L
O
W
S2
224 to 280 mcd
T1
280 to 355 mcd
T2
355 to 450 mcd
U1
450 to 560 mcd
U2
560 to 710 mcd
V1
710 to 900 mcd
T1
280 to 355 mcd
VLMSY3420
VLMSY3420
VLMSY3420
VLMSY3420
VLMSY3420
VLMSY3420
T2
355 to 450 mcd
VLMSY3420
VLMSY3420
VLMSY3420
VLMSY3420
VLMSY3420
VLMSY3420
U1
450 to 560 mcd
VLMSY3420
VLMSY3420
VLMSY3420
VLMSY3420
VLMSY3420
VLMSY3420
U2
560 to 710 mcd
VLMSY3420
VLMSY3420
VLMSY3420
VLMSY3420
VLMSY3420
VLMSY3420
V1
710 to 900 mcd
VLMSY3420
VLMSY3420
VLMSY3420
VLMSY3420
VLMSY3420
VLMSY3420
V2
900 to 1120 mcd
VLMSY3420
VLMSY3420
VLMSY3420
VLMSY3420
VLMSY3420
VLMSY3420
Note:
1) Luminous intensity is tested at a current pulse duration of 25 ms and an accuracy of ± 11 %
COLOR CLASSIFICATION
DOMINANT WAVELENGTH (nm)
GROUP
YELLOW
MIN.
MAX.
1
581
584
2
583
586
3
585
588
4
587
590
5
589
592
6
591
594
TYPICAL CHARACTERISTICS
Tamb = 25 °C, unless otherwise specified
0.12
50
1 chip on
40
2 chips on
30
20
10
0
0 10 20 30 40 50 60 70 80 90 100 110 120
20087
Tam b -Ambient Temperature (°C)
Figure 1. Forward Current vs. Ambient Temperature for InGaN
Document Number 81305
Rev. 1.3, 10-Jul-08
I F - Forward Current (A)
IF -Forward Current (mA)
60
0.10
0.08
tp/T = 0.005
0.05
0.5
0.06
0.04
0.02
for one chip
operation only
0.00
10 -5 10 -4 10 -3 10 -2 10 -1 10 0
20085
tp - Pulse Length (s)
101
102
Figure 2. Forward Current vs. Pulse Duration
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VLMSY3420
Vishay Semiconductors
0°
10°
20°
100
0.9
50°
0.8
60°
70°
0.7
70
60
50
40
30
20
10
80°
95 10319
0.6
0.4
0.2
0
1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5
VF - Forward Voltage (V)
0
20090
Figure 3. Rel. Luminous Intensity vs. Angular Displacement
Figure 6. Relative Forward Voltage vs. Ambient Temperature
10
yellow
IV rel - Relative Luminous Intensity
IV rel - Relative Luminous Intensity
1.2
1.0
0.8
0.6
0.4
0.2
0.0
540
yellow
1
0.1
0.01
560
580
600
620
1
640
λ - Wavelength (nm)
16008
10
IV rel - Relative Luminous Intensity
IV rel - Relative Luminous Intensity
super red
0.8
0.6
0.4
0.2
0.0
600
super red
1
0
0.01
620
640
660
680
1
700
λ - Wavelength (nm)
Figure 5. Relative Intensity vs. Wavelength
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4
100
Figure 7. Relative Luminous Intensity vs. Forward Current
1.2
17045_1
10
IF - Forward Current (mA)
17018
Figure 4. Relative Intensity vs. Wavelength
1.0
superred
yellow
80
IF - Forward Current (mA)
40°
1.0
90
ϕ - Angular Displacement
IV rel - Relative Luminous Intensity
30°
17042
10
100
IF - Forward Current (mA)
Figure 8. Relative Luminous Intensity vs. Forward Current
For technical support, please contact: [email protected]
Document Number 81305
Rev. 1.3, 10-Jul-08
VLMSY3420
Vishay Semiconductors
IV rel - Relative Luminous Intensity
yellow
2.0
1.5
1.0
0.5
0.0
- 50
17016
- 25
0
25
50
75
Tamb - Ambient Temperature (°C)
2.0
1.5
1.0
0.5
100
yellow
4
2
0
-2
-4
17017
100
Figure 11. Rel. Luminous Intensity vs. Ambient Temperature
Document Number 81305
Rev. 1.3, 10-Jul-08
-2
-3
-4
-5
- 50
- 25
0
25
50
75
100
Tamb - Ambient Temperature (°C)
250
30 mA
200
50 mA
yellow
150
100
50
0
10 mA
- 50
- 100
- 150
- 200
- 50
- 25
0
25
50
75
Tamb - Ambient Temperature (°C)
100
Figure 13. Change of Forward Voltage vs. Ambient Temperature
VF - Change of Forward Voltage (mV)
Δλd - Change of Dom. Wavelength (nm)
6
- 25
0
25
50
75
Tamb - Ambient Temperature (°C)
0
-1
17015
Figure 10. Rel. Luminous Intensity vs. Ambient Temperature
-6
- 50
1
Figure 12. Change of Dominant Wavelength vs.
Ambient Temperature
Δ VF - Change of Forward Voltage (mV)
I Vrel - Relative Luminous Intensity
superred
20089
superred
20088
2.5
- 25
0
25
50
75
Tamb - Ambient Temperature (°C)
2
100
Figure 9. Rel. Luminous Intensity vs. Ambient Temperature
0.0
- 50
3
Δ λ d - Change of Dom. W avelength (nm)
2.5
250
200
super red
30 mA
150
100
50 mA
50
0
10 mA
- 50
- 100
- 150
- 200
- 50
17039_1
- 25
0
25
50
75
100
Tamb - Ambient Temperature (°C)
Figure 14. Change of Forward Voltage vs. Ambient Temperature
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VLMSY3420
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters
Mounting Pad Layout
4
0.5
4
2.6 (2.8)
1.2
area covered with
solder resist
1.6 (1.9)
Dimensions: IR and Vaporphase
(Wave Soldering)
19899
METHOD OF TAPING/POLARITY AND TAPE AND REEL
SMD LED (VLM.3-SERIES)
Vishay’s LEDs in SMD packages are available in an
antistatic 8 mm blister tape (in accordance with
DIN IEC 40 (CO) 564) for automatic component
insertion. The blister tape is a plastic strip with
impressed component cavities, covered by a top tape.
TAPING OF VLM.3...
3.5
3.1
2.2
2.0
5.75
5.25
3.6
3.4
Adhesive tape
4.0
3.6
8.3
7.7
1.85
1.65
1.6
1.4
Blister tape
4.1
3.9
4.1
3.9
0.25
2.05
1.95
94 8668
Figure 15. Tape Dimensions in mm for PLCC-2
Component cavity
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94 8670
For technical support, please contact: [email protected]
Document Number 81305
Rev. 1.3, 10-Jul-08
VLMSY3420
Vishay Semiconductors
REEL PACKAGE DIMENSION IN MILLIMETERS
FOR SMD LEDS, TAPE OPTION GS08
(= 1500 PCS.)
10.0
9.0
120°
4.5
3.5
4.5
3.5
13.00
12.75
2.5
1.5
63.5
60.5
Identification
62.5
60.0
Identification
14.4 max.
180
178
10.4
8.4
120°
13.00
12.75
2.5
1.5
Label:
Vishay
Type
Group
Tape Code
Production
Code
Quantity
REEL PACKAGE DIMENSION IN MILLIMETERS
FOR SMD LEDS, TAPE OPTION GS18
(= 8000 PCS.) PREFERRED
94 8665
Label:
Vishay
Type
Group
Tape Code
Production
Code
Quantity
Figure 16. Reel Dimensions - GS08
14.4 max.
321
329
18857
Figure 17. Reel Dimensions - GS18
SOLDERING PROFILE
IR Reflow Soldering Profile for lead (Pb)-free soldering
TTW Soldering (acc. to CECC00802)
Preconditioning acc. to JEDEC Level 2a
300
300
5s
240 °C
217 °C
250
Temperature (°C)
250
Temperature (°C)
max. 260 °C
245 °C
255
255°C°C
200
max. 30 s
150
max. 100 sec
max. 120 sec
100
200
second
full line: typical
wave
dotted line: process limits
ca. 200 K/s
150
ca. 2 K/s
100 to 130 °C
100
2 K/s
max. Ramp Down 6 °C/sec
max. Ramp Up 3 °C/sec
50
235 to 260 °C
first wave
lead temperature
ca. 5 K/s
50
forced cooling
0
0
0
50
100
19470-2
150
200
250
948626-1
50
100
150
200
250
Time (s)
max. 2 cycles allowed
Figure 18. Vishay Lead (Pb)-free Reflow Soldering Profile
(acc. to J-STD-020C)
Document Number 81305
Rev. 1.3, 10-Jul-08
0
300
Time (s)
Figure 19. Double Wave Soldering of Opto Devices (all Packages)
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VLMSY3420
Vishay Semiconductors
DRY PACKING
The reel is packed in an anti-humidity bag to protect
the devices from absorbing moisture during
transportation and storage.
L E V E L
CAUTION
This bag contains
MOISTURE –SENSITIVE DEVICES
2a
1. Shelf life in sealed bag 12 months at <40°C and < 90% relative humidity (RH)
2. After this bag is opened devices that will be subjected to infrared reflow,
vapor-phase reflow, or equivalent processing (peak package body temp.
260°C) must be:
a) Mounted within 672 hours at factory condition of < 30°C/60%RH or
b) Stored at <10% RH.
Aluminum bag
Label
3. Devices require baking before mounting if:
a)
Humidity Indicator Card is >10% when read at 23°C + 5°C or
b)
2a or 2b is not met.
4. If baking is required, devices may be baked for:
192 hours at 40°C + 5°C/-0°C and <5%RH (dry air/nitrogen)
or
o
or
96 hours at 60±5 Cand <5%RH
For all device containers
24 hours at 100±5°C
Not suitable for reels or tubes
Bag Seal Date: ______________________________
(If blank, see bar code label)
Reel
Note: LEVEL defined by EIA JEDEC Standard JESD22-A113
15973
Example of JESD22-A112 level 2a label
FINAL PACKING
The sealed reel is packed into a cardboard box. A
secondary cardboard box is used for shipping
purposes.
RECOMMENDED METHOD OF STORAGE
Dry box storage is recommended as soon as the
aluminium bag has been opened to prevent moisture
absorption. The following conditions should be
observed, if dry boxes are not available:
• Storage temperature 10 °C to 30 °C
• Storage humidity ≤ 60 % RH max.
After more than 672 h under these conditions moisture
content will be too high for reflow soldering.
In case of moisture absorption, the devices will recover
to the former condition by drying under the following
condition:
192 h at 40 °C + 5 °C/- 0 °C and < 5 % RH
(dry air/ nitrogen) or
96 h at 60 °C + 5 °C and < 5 % RH for all device
containers or
24 h at 100 °C + 5 °C not suitable for reel or tubes.
An EIA JEDEC standard JESD22-A112 level 2a label
is included on all dry bags.
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19786
ESD PRECAUTION
Proper storage and handling procedures should be
followed to prevent ESD damage to the devices
especially when they are removed from the antistatic
shielding bag. Electro-static sensitive devices warning
labels are on the packaging.
VISHAY SEMICONDUCTORS STANDARD
BAR CODE LABELS
The Vishay Semiconductors standard bar code labels
are printed at final packing areas. The labels are on
each packing unit and contain Vishay Semiconductors
specific data.
For technical support, please contact: [email protected]
Document Number 81305
Rev. 1.3, 10-Jul-08
VLMSY3420
Vishay Semiconductors
OZONE DEPLETING SUBSTANCES POLICY STATEMENT
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively.
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA.
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or
unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs,
damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death
associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number 81305
Rev. 1.3, 10-Jul-08
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9
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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