ETC HT7022A

深圳明和科技有限公司
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Tel:0755-82536500
HT70XX 系列电压检测器
特征:
●低功耗:典型值为2uA
●温度系数好
●内置高稳定性参考源
●内置滞后特性
●TO-92 及SOT-89 封装,也可以定制SOT23-3封装
应用
电池检测器,电平选择器,掉电检测器,微机复位,电池存储备份,非易失性RAM 信号存储保护器等
概述
HT70XX 系列是采用COMS 技术实现的三端低电压检测器,该系列检测器能检测2.2V–7V 的固定电压,
检测器由4 部分组成,高精度低功耗的标准电压源,比较器滞后电路,输出驱动COMS 技术确保了低
功耗,尽管检测器主要是设计成固定电压的检测,但通过外围元件也能检测用户所指定的阀值电压
(仅限NMOS 开漏输出类型)
选择表 1
注
型号
可检测电压
滞后度
允差
HT7022A
2.2V
0.11V
2%
HT7024A
2.4V
0.12V
2%
HT7027A
2.7V
0.135V
2%
HT7030A
3.0V
0.145V
2%
HT7033A
3.3V
0.165V
2%
HT7039A
3.9V
0.195V
2%
HT7044A
4.4V
0.22V
2%
HT7050A
5.0V
0.25V
2%
HT7070A
7.0V
0.35V
2%
改产品是NMOS开漏输出,外围需接上拉电阻, 低电位有效
例如 HT7050A 表示5.0V
NMOS 开漏输出,低电平有效输出
输出型号选择表2
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结构图
N 沟道开漏输出(常开
低有效)
如图1-1
图1-1
A 型号
图中
虚线表示VIN 从LO 到HI 实线表示VIN 从HI 到LO
图1-2
引脚分布
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图1-3
面板分布
HT70XX
除HT7022A
2
芯片尺寸 1317 X 1158 (um) 工艺上IC 衬底与PCB 上的VDD 相连
图1-4
芯片尺寸 2032 X 1321 ( um ) 工艺上IC 衬底与PCB 上的VDD 相连
极限参数
电源
--------------------------------------------------------------------(0.3V 到 20V)
输出电流--------------------------------------------------------------------(5mA)
存储温度---------------------------------------------------------------(-50℃到 125℃ )
功耗-------------------------------------------------------------------------(200mW)
运行温度----------------------------------------------------------------( -40℃到100℃ )
电气特性
HT7022-A 表3-1
测试条件
符号
参数
最小
典型值
最大
单位
条件
VDD
VDET
高-低可检测电压
2.156
2.2
2.244
低-高可检测电压
2.2
2.31
2.468
VHYS
滞后度
0.02 DET
IDD
运行电流
V
V
8V
无负载
0.05 DET
V
0.1 DET
V
V
1.5
2.5
uA
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VDD
运行电压
IOL
输出灌电流
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1.5
2V
VOUT=0.2V
1.5
18
V
2.5
mA
±0.36
mV/℃
△VDET
温度系数
20℃ <Ta<110℃
△TA
HT7024-A 表3-2
测试条件
符号
最小
参数
VDD
典型值
最大
VDET
高-低可检测电压
2.352
2.4
2.448
低-高可检测电压
2.4
2.52
2.693
VHYS
滞后度
0.02 DET
IDD
运行电流
VDD
运行电压
IOL
输出灌电流
V
8V
无负载
V
VOUT=0.2V
1.5
V
0.05 DET
0.1 DET
V
V
1.5
2.5
uA
18
V
1.5
2V
单位
条件
2.5
mA
±0.40
mV/℃
V
△ DET
温度系数
20℃ <Ta<110℃
T
△ A
HT7027A 表3-3
测试条件
符号
参数
VDD
最小
典型值
最大
单位
条件
VDET
高-低可检测电压
2.646
2.7
2.754
低-高可检测电压
2.7
2.835
3.029
VHYS
滞后度
0.02 DET
V
V
V
0.05 DET
V
0.1 DET
V
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IDD
运行电流
VDD
运行电压
IOL
输出灌电流
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8V
无负载
Tel:0755-82536500
1.5
1.5
2V
VOUT=0.2V
1.5
2.5
uA
18
V
2.5
mA
±0.45
mV/℃
△VDET
温度系数
20℃ <Ta<110℃
△TA
HT7033A 表3-4
测试条件
符号
参数
VDD
最小
典型值
最大
单位
条件
VDET
高-低可检测电压
3.234
3.3
3.366
低-高可检测电压
3.3
3.465
3.703
VHYS
滞后度
0.02 DET
IDD
运行电流
VDD
运行电压
IOL
输出灌电流
V
V
8V
无负载
0.05 DET
V
0.1 DET
V
V
1.5
2.5
uA
18
V
1.5
2V
VOUT=0.2V
1.5
2.5
mA
±0.55
mV/℃
△VDET
温度系数
20℃ <Ta<110℃
△TA
HT7039A 表3-5
测试条件
符号
参数
VDD
VDET
高-低可检测电压
最小
典型值
最大
单位
3.822
3.9
3.978
V
条件
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低-高可检测电压
3.9
VHYS
滞后度
0.02 DET
IDD
运行电流
VDD
运行电压
IOL
输出灌电流
V
8V
无负载
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4.095
V
0.05 DET
0.1 DET
V
V
1.5
2.5
uA
18
V
1.5
2V
VOUT=0.2V
1.5
4.376
2.5
mA
±0.65
mV/℃
△VDET
温度系数
20℃ <Ta<110℃
△TA
HT7044A 表3-6
测试条件
符号
参数
VDD
最小
典型值
最大
单位
条件
VDET
高-低可检测电压
4.312
4.4
4.488
低-高可检测电压
4.4
4.62
4.937
VHYS
滞后度
0.02 DET
IDD
运行电流
VDD
运行电压
IOL
输出灌电流
V
V
8V
无负载
0.05 DET
V
0.1 DET
V
V
1.5
2.5
uA
18
V
1.5
2V
VOUT=0.2V
1.5
2.5
mA
±0.73
mV/℃
△VDET
温度系数
20℃ <Ta<110℃
△TA
HT7050 表3-7
测试条件
符号
参数
最小
VDD
典型值
最大
单位
条件
-----------------------------------------------------------------------------------------------------------------------------------------------------6-
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VDET
高-低可检测电压
4.9
5.0
5.1
低-高可检测电压
5.0
5.25
5.61
VHYS
滞后度
0.02 DET
IDD
运行电流
VDD
运行电压
IOL
输出灌电流
V
8V
无负载
V
0.05 DET
0.1 DET
V
V
1.5
2.5
uA
18
V
1.5
2V
VOUT=0.2V
1.5
V
2.5
mA
±0.83
mV/℃
△VDET
温度系数
20℃ <Ta<110℃
△TA
HT7070A 表3-8
测试条件
符号
参数
VDD
最小
典型值
最大
单位
条件
VDET
高-低可检测电压
6.86
7.0
7.14
低-高可检测电压
7.203
7.35
7.497
VHYS
滞后度
0.02 DET
IDD
运行电流
VDD
运行电压
IOL
输出灌电流
V
V
8V
无负载
0.05 DET
V
0.1 DET
V
V
1.5
2.5
uA
18
V
1.5
2V
VOUT=0.2V
1.5
2.5
mA
±1.0
mV/℃
△VDET
温度系数
20℃ <Ta<110℃
△TA
-----------------------------------------------------------------------------------------------------------------------------------------------------7-
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功能概述
HT70XX 系列带有高稳定的参考电压参考。它与比较器负输入端相连。见下图中NMOS 输出电压检测器的
VREF
。
当比较器正向输入(如VB)电压高于VREF 时,VOUT 置高,M1关闭,VBH=VDD×(RB+RC)/(RA+RB+RC)。如
果VDD 减少VB 降到少于VREF,比较器的输出从高变到低,VOUT 置低 VC 为高,M1 打开,RC 为旁路,VBL=VDD
×RB/(RA+RB),少于VBH 这样,当VB≈VREF 时比较器的输出为低防止电路产生振荡。
如果VDD 降到低于最小运行电压, 输出变为不确定。当VDD 从低变为VDD ×RB/ ( RA+RB )> VREF 时,
比较器的输出和VOUT 都置高。
可检测电压表示为:
VDET(-)
=
(RA+RB+RC)
/
(RB+RC )× VREF
释放电压表示为:
VDET (+) = (RA+RB )/RB ×VREF
滞后度为:VHYS=VDET(+)-VDET(-)
此图所示为带正极性输出的NMOS输出类型(VOUT 是常开,低有效)。HT70XX系列还支持其它类型
的高有效输出。除有其它说明这里的应用电路都是指正极性输出(常开,低有效)。
图1-7 NMOS 输出电压检测器
HT70XXA
应用电路
微机复位电路:
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通常复位电路是在电源中断时保护微机系统不出现故障。下面的例子将说明在
的系统中, 完成的复位功能输出结构是如何不同的。应用于独立电源的NMOS
开漏结构输出
图1-8
带R-C 延迟的NMOS 开漏结构输出
图1-9
上电复位电路
使用几个外围元件,HT70XX 系列的NMOS 开漏结构就能完成上电复位功能,如下:
图1-10
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5V 电源监视电路
一般地,5V 电源系统的运行电压最低为4.5V。
HT7044A可用作5V电源的监视电路,带上电复位的5V 电源监视器
图1-11
带5V 电压调整器的电源监视器
图1-12
可检测电压的调整
如果在标准产品选择表中没有所要求的电压,可通过外部电阻分压或二极管来实现。
利用电阻分压改变可检测电压
图1-13
可检测电压=
滞后度=
(RA+RB)
RA+RB
/RB
× VDET
/RB VHYS
利用二极管改变可检测电压
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图1-14
可检测电压=Vf1+Vf2+VDET
故障分析
下图是通过监视电源电压的变化或尖噪声来分析故障的电路
图1-15
充电监视电路
下图是防止电池过充的充电监视电路当电池电压高于设定的可检测电压时三极管打开以旁路充电电流防止电
池过充。
Varying the detectable voltage with a diode.
电平选择器
下图是逻辑电平选择器
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图1-18
封装信息(Package Information):
SOT89 封装(3 Pin SOT89 OutLine Dimensions)
Product Tape and Reel Specifications SOT-89 Reel Dimensions (Unit: mm)
Symbol (符号)
A
Min.
173
Dimensions in mm
Nom.
--
Max.
181
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B
C
D
E
F
G
H
I
J
Symbol
www.led-ics.com
64
90
35
155
14
17
-55
14
Description
W
Carrier Tape Width
P
E
Cavity Pitch
Perforation Position
Cavity to Perforation (Width
Direction)
Perforation Diameter
Cavity Hole Diameter
Perforation Pitch
Cavity to Perforation
(Length Direction)
Cavity Length
Cavity Width
Cavity Depth
Carrier Tape Thickness
Cover Tape Width
F
D
D1
P0
P1
A0
B0
K0
t
C
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------59
---
72
102
47
167
19
22
-63
17
Dimensions in mm
12.0+0.3-0.1
8.0±0.1
1.75±0.1
5.5±0.05
1.5+0.1
1.5+0.1
4.0±0.1
2.0±0.10
4.8±0.1
4.5±0.1
1.8±0.1
0.30±0.013
9.3
TO92 封装(3 Pin TO92 OutLine Dimensions)
Package Information 3-Pin TO-92 Outline Dimensions 3-Pin SOT-89 Outline Dimensions.
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Symbol(符号)
A
B
C
D
E
F
G
H
I
α
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Min.
170
170
500
11
90
45
45
130
8
4°
Dimensions in mil
Nom.
-----------
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Max.
200
200
-20
110
55
65
160
18
6°
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HT70XXA-1
TinyPowerTM Voltage Detector
Features
· Low power consumption
· Output voltage accuracy: tolerance ± 3%
· Low temperature coefficient
· Built-in hysteresis characteristic
· High input voltage range (up to 24V)
· TO92, SOT89 and SOT23-5 package
Applications
· Battery checkers
· Microcomputer reset
· Level selectors
· Battery memory backup
· Power failure detectors
· Non-volatile RAM signal storage protectors
General Description
The HT70XXA-1 series devices area set of three terminal
low power voltage detectors implemented in CMOS
technology. Each voltage detector in the series detects a
particular fixed voltage ranging from 2.2V to 5V. The
voltage detectors consist of a high-precision and low
power consumption standard voltage source as well as a
comparator, hysteresis circuit, and an output driver.
CMOS technology ensures low power consumption.
Although designed primarily as fixed voltage detectors,
these devices can be used with external components to
detect user specified threshold voltages.
Selection Table
Detectable
Voltage
Hysteresis
Width
Tolerance
HT7022A-1
2.2V
0.11V
±3%
HT7024A-1
2.4V
0.12V
±3%
HT7027A-1
2.7V
0.135V
±3%
HT7033A-1
3.3V
0.165V
±3%
HT7039A-1
3.9V
0.195V
±3%
HT7044A-1
4.4V
0.22V
±3%
HT7050A-1
5.0V
0.25V
±3%
Part No.
Note:
Package
TO92
SOT89
SOT23-5
Marking
70XXA-1 (for TO92)
70XXA-1 (for SOT89)
0XXA (for SOT23-5)
²XX² stands for output voltages.
For lead free devices, TO92 package will add a ²#² mark at the end of the date code, whereas SOT89 &
SOT23-5 packages will add a ²#² mark at the end of the marking.
Rev. 1.50
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HT70XXA-1
Block Diagram
N Channel Open Drain Output (Normal Open; Active Low)
V O U T
V D D
V R E F
G N D
Output Table & Curve
V
VDD
VDD>VDET(+)
VDD£VDET(-)
VOUT
Hi-Z
VSS
O U T
D a s h lin e ... V
S o lid lin e ... V
V
V
D E T
V
D E T
V
´ 1 .0 5
IN
IN
fro m L
fro m H
O
I
®
®
L
H
I
O
IN
H Y S
Pin Assignment
T O 9 2
S O T 2 3 -5
S O T 8 9
N C
N C
F r o n t V ie w
7 0 X X A -1
7 0 X X A -1
T o p V ie w
0 X X A
O U T
O U T V D D
V D D
V S S
V S S
B o tto m
深圳明和科技有限公司
V D D
V S S
O U T
V D D
V S S
V ie w
O U T
Rev. 1.50
O U T
V D D
V S S
2
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HT70XXA-1
Absolute Maximum Ratings
Supply Voltage .............................................................................................................................VSS-0.3V to VSS+26V
Output Voltage ...........................VSS-0.3V to VDD+0.3V
Output Current......................................................50mA
Storage Temperature ............................-50°C to 125°C
Power Consumption ..........................................200mW
Operating Temperature ...........................-40°C to 85°C
Note: These are stress ratings only. Stresses exceeding the range specified under ²Absolute Maximum Ratings² may
cause substantial damage to the device. Functional operation of this device at other conditions beyond those
listed in the specification is not implied and prolonged exposure to extreme conditions may affect device
reliability.
Electrical Characteristics
HT7022A-1
Ta=25°C
Symbol
Parameter
Test Conditions
VDD
Conditions
Min.
Typ.
Max.
Unit
VDET
Detection Voltage
¾
¾
2.134
2.200
2.266
V
VHYS
Hysteresis Width
¾
¾
0.02
VDET
0.05
VDET
0.1
VDET
V
IDD
Operating Current
8V
¾
4
7
mA
VDD
Operating Voltage
¾
1.5
¾
24
V
IOL
Output Sink Current
2V
VOUT=0.2V
0.5
1
¾
mA
DVDET
DTa
Temperature Coefficient
¾
0°C<Ta<70°C
¾
±1.1
¾
mV/°C
No load
¾
HT7024A-1
Ta=25°C
Symbol
Parameter
Test Conditions
VDD
Conditions
Min.
Typ.
Max.
Unit
VDET
Detection Voltage
¾
¾
2.328
2.400
2.472
V
VHYS
Hysteresis Width
¾
¾
0.02
VDET
0.05
VDET
0.1
VDET
V
IDD
Operating Current
8V
¾
4
7
mA
VDD
Operating Voltage
¾
1.5
¾
24
V
IOL
Output Sink Current
2V
VOUT=0.2V
0.5
1
¾
mA
DVDET
DTa
Temperature Coefficient
¾
0°C<Ta<70°C
¾
±0.9
¾
mV/°C
Rev. 1.50
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No load
¾
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HT70XXA-1
HT7027A-1
Ta=25°C
Symbol
Parameter
Test Conditions
VDD
Conditions
Min.
Typ.
Max.
Unit
VDET
Detection Voltage
¾
¾
2.619
2.700
2.781
V
VHYS
Hysteresis Width
¾
¾
0.02
VDET
0.05
VDET
0.1
VDET
V
IDD
Operating Current
8V
¾
4
7
mA
VDD
Operating Voltage
¾
1.5
¾
24
V
IOL
Output Sink Current
2V
VOUT=0.2V
0.5
1
¾
mA
DVDET
DTa
Temperature Coefficient
¾
0°C<Ta<70°C
¾
±0.9
¾
mV/°C
No load
¾
HT7033A-1
Ta=25°C
Symbol
VDET
Parameter
Detection Voltage
Test Conditions
Min.
Typ.
Max.
Unit
¾
3.201
3.300
3.399
V
¾
0.02
VDET
0.05
VDET
0.1
VDET
V
¾
4
7
mA
1.5
¾
24
V
VOUT=0.25V
1.2
2.5
¾
mA
0°C<Ta<70°C
¾
±0.9
¾
mV/°C
VDD
Conditions
¾
VHYS
Hysteresis Width
¾
IDD
Operating Current
8V
VDD
Operating Voltage
¾
IOL
Output Sink Current
DVDET
DTa
Temperature Coefficient
No load
¾
2.5V
¾
HT7039A-1
Ta=25°C
Symbol
Parameter
Test Conditions
VDD
Conditions
Min.
Typ.
Max.
Unit
VDET
Detection Voltage
¾
¾
3.783
3.900
4.017
V
VHYS
Hysteresis Width
¾
¾
0.02
VDET
0.05
VDET
0.1
VDET
V
IDD
Operating Current
8V
¾
4
7
mA
VDD
Operating Voltage
¾
1.5
¾
24
V
IOL
Output Sink Current
VOUT=0.25V
1.2
2.5
¾
mA
DVDET
DTa
Temperature Coefficient
0°C<Ta<70°C
¾
±0.9
¾
mV/°C
Rev. 1.50
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2.5V
¾
No load
¾
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HT70XXA-1
HT7044A-1
Ta=25°C
Symbol
Parameter
Test Conditions
VDD
Conditions
Min.
Typ.
Max.
Unit
VDET
Detection Voltage
¾
¾
4.268
4.400
4.532
V
VHYS
Hysteresis Width
¾
¾
0.02
VDET
0.05
VDET
0.1
VDET
V
IDD
Operating Current
8V
VDD
Operating Voltage
¾
IOL
Output Sink Current
DVDET
DTa
Temperature Coefficient
¾
4
7
mA
1.5
¾
24
V
VOUT=0.36V
3
6
¾
mA
0°C<Ta<70°C
¾
±0.9
¾
mV/°C
No load
¾
3.6V
¾
HT7050A-1
Ta=25°C
Symbol
Parameter
Test Conditions
VDD
Conditions
Min.
Typ.
Max.
Unit
VDET
Detection Voltage
¾
¾
4.850
5.000
5.150
V
VHYS
Hysteresis Width
¾
¾
0.02
VDET
0.05
VDET
0.1
VDET
V
¾
4
7
mA
¾
2.1
¾
24
V
VOUT=0.36V
3
6
¾
mA
0°C<Ta<70°C
¾
±0.9
¾
mV/°C
IDD
Operating Current
8V
VDD
Operating Voltage
¾
IOL
Output Sink Current
DVDET
DTa
Temperature Coefficient
3.6V
¾
No load
Functional Description
The HT70XXA-1 series is a set of voltage detectors
equipped with a high stability voltage reference which is
connected to the negative input of a comparator¾
denoted as VREF in the following figure for NMOS output
voltage detector.
The hysteresis width is:
VHYS = VDET (+) - VDET (-)
The figure demonstrates the NMOS output type with
positive output polarity (VOUT is normally open, active
low). The HT70XXA-1 series also supplies options for
other output types with active high outputs. Application
circuits shown are examples of positive output polarity
(normally open, active low) unless otherwise specified.
When the voltage drop to the positive input of the
comparator (i,e,VB) is higher than VREF, VOUT goes
high, M1 turns off, and VB is expressed as VBH=VDD ´
(RB+RC) / (RA+RB+RC). If VDD is decreased so that VB
falls to a value less than VREF, the comparator output
inverts from high to low, VOUT goes low, VC is high, M1
turns on, RC is bypassed, and VB becomes: VBL= VDD ´
RB / (RA+RB), which is less than VBH. By so doing, the
comparator output will stay low to prevent the circuit
from oscillating when VB » VREF.
V
R
V
V
R E F
R
V
B
C
V
O U T
M N
B
R
RA + RB + RC
´ VREF
RB + RC
C
V
The release voltage is defined as:
RA + RB
´ VREF
VDET (+) =
RB
深圳明和科技有限公司
R L
M 1
The detectable voltage is defined as:
Rev. 1.50
A
C o m p a ra to r
If VDD falls below the minimum operating voltage, the
output becomes undefined. When VDD goes from low to
VDD ´ RB / (RA+RB) > VREF, the comparator output and
VOUT goes high.
VDET (-) =
D D
S S
NMOS Output Voltage Detector (HT70XXA-1)
5
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HT70XXA-1
Application Circuits
Microcomputer Reset Circuit
Power-on Reset Circuit
Normally a reset circuit is required to protect the
microcomputer system from malfunctions due to power
line interruptions. The following examples show how
different output configurations perform a reset function
in various systems.
With several external components, the NMOS open
drain type of the HT70XXA-1 series can be used to
perform a power-on reset function as shown:
V
IN
R
· NMOS open drain output application for separate
D
power supply
V
V
D D 1
V
H T 7 0 X X A -1
V
D D 2
D D
V
C
O U T
R E S E T
M ic r o C o m p u te r
O U T
V
O U T
V
S S
H T 7 0 X X A -1
V
S S
V
V
D D
S S
· NMOS open drain output application with R-C delay
V
D D
R
H T 7 0 X X A -1
V
O U T
t
M ic r o C o m p u te r
V
O U T
C
V
S S
t
5V Power Line Monitoring Circuit
Generally, a minimum operating voltage of 4.5V is
guaranteed in a 5V power line system. The HT7044A-1
is recommended for use as 5V power line monitoring
circuit.
· 5V power line monitor with power-on reset
5 V P o w e r lin e
R
D
V
D D
C
V
O U T
H T 7 0 4 4 A -1
V
Rev. 1.50
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S S
V
S S
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HT70XXA-1
· with 5V voltage regulator
Malfunction Analysis
The following circuit demonstrates the way a circuit
analyzes malfunctions by monitoring the variation or
spike noise of power supply voltage.
5 V V o lta g e r e g u la to r
V
5 V
H T 7 1 5 0 -1
IN
V
D D
V
S S
G N D
V
D D
V
V
H T 7 0 X X A -1
H T 7 0 4 4 A -1
V
V
S S
S S
Charge Monitoring Circuit
Change of Detectable Voltage
The following circuit shows a charged monitor for
p r o t e ct i o n a g a i n st b a t t e r y d e t e r i o r a t i o n b y
overcharging. When the voltage of the battery is higher
than the set detectable voltage, the transistor turns on to
bypass the charge current, protecting the battery from
overcharging.
If the required voltage is not found in the standard
product selection table, it is possible to change it by
using external resistance dividers or diodes.
· Varying the detectable voltage with a resistance di-
vider
V
O U T
O U T
IN
R
V
R
V
V
A
D D
V
O U T
V
S S
S o la r
C e ll
V
O U T
D D
B A T T
T r
L o a d
H T 7 0 X X A -1
B
S S
V
S S
H T 7 0 X X A -1
RA + RB
´ VDET
RB
RA + RB
Hysteresis width =
´ VHYS
RB
Detectable voltage =
· Varying the detectable voltage with a diode
V
IN
V f1
V f2
V
D D
V
O U T
H T 7 0 X X A -1
V
V
S S
S S
Detectable Voltage = Vf1+Vf2+VDET
Rev. 1.50
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HT70XXA-1
Level Selector
The following diagram illustrates a logic level selector.
V
D D
V
V
S S
V
5 .0 V
V
D E T 1
3 .9 V
V
D E T 2
V
O U T
H T 7 0 3 9 A -1
H T 7 0 5 0 A -1
V
V
D E T 2
V
O U T
O U T
D E T 1
D D
t
V
O U T
t
Rev. 1.50
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HT70XXA-1
Package Information
3-pin TO92 Outline Dimensions
A
B
D
C
E
F
G
H
Symbol
A
Dimensions in mil
Min.
Nom.
Max.
170
¾
200
200
B
170
¾
C
500
¾
¾
D
11
¾
20
E
90
¾
110
F
45
¾
55
G
45
¾
65
H
130
¾
160
I
8
¾
18
a
4°
¾
6°
Rev. 1.50
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HT70XXA-1
3-pin SOT89 Outline Dimensions
I
A
J
B
C
E
D
G
F
Symbol
H
Dimensions in mil
Min.
Nom.
Max.
A
173
¾
181
B
59
¾
72
C
90
¾
102
D
35
¾
47
E
155
¾
167
F
14
¾
19
G
17
¾
22
H
¾
59
¾
I
55
¾
63
J
14
¾
17
Rev. 1.50
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HT70XXA-1
5-pin SOT23-5 Outline Dimensions
D
C
L
H
E
q
e
A
A 2
b
Symbol
A 1
Dimensions in mm
Min.
Nom.
Max.
1.00
¾
1.30
A1
¾
¾
0.10
A2
0.70
¾
0.90
A
b
0.35
¾
0.50
C
0.10
¾
0.25
D
2.70
¾
3.10
E
1.40
¾
1.80
e
¾
1.90
¾
H
2.60
¾
3.00
L
0.37
¾
¾
q
1°
¾
9°
Rev. 1.50
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HT70XXA-1
Product Tape and Reel Specifications
3-pin TO92 Reel Dimensions (Unit: mm)
P a c k a g e U p ,
F la t S id e U p
3 0
P a c k a g e U p ,
F la t S id e D o w n
4 3
5 8
8 8
3 6 0
Rev. 1.50
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HT70XXA-1
Reel Dimensions
D
T 2
A
C
B
T 1
SOT89
Symbol
Description
Dimensions in mm
A
Reel Outer Diameter
180.0±1.0
B
Reel Inner Diameter
62.0±1.5
C
Spindle Hole Diameter
12.75+0.15/-0.00
D
Key Slit Width
1.90±0.15
T1
Space Between Flange
12.4+0.2/-0.0
T2
Reel Thickness
17.0+0.0/-0.4
SOT23-5
Symbol
Description
Dimensions in mm
A
Reel Outer Diameter
178.0±1.0
B
Reel Inner Diameter
62.0±1.0
C
Spindle Hole Diameter
13.0±0.2
D
Key Slit Width
2.50±0.25
T1
Space Between Flange
8.4+1.5/-0.0
T2
Reel Thickness
11.4+1.5/-0.0
Rev. 1.50
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HT70XXA-1
Carrier Tape Dimensions
P
D h
W 2
H 1
H
H 0
l1
W 0
t
W 1
W
F 1
F 2
D 0
P 2
P 0
TO92
Symbol
Note:
Description
Dimensions in mm
I1
Taped Lead Length
(2.5)
P
Component Pitch
12.7±1.0
P0
Perforation Pitch
12.7±0.3
P2
Component to Perforation (Length Direction)
6.35±0.40
F1
Lead Spread
2.5+0.4/-0.1
F2
Lead Spread
2.5+0.4/-0.1
Dh
Component Alignment
W
Carrier Tape Width
W0
Hold-down Tape Width
6.0±0.5
W1
Perforation Position
9.0±0.5
W2
Hold-down Tape Position
H0
Lead Clinch Height
16.0±0.5
H1
Component Height
Less than 24.7
D0
Perforation Diameter
4.0±0.2
t
Taped Lead Thickness
0.7±0.2
H
Component Base Height
19.0±0.5
0.0±0.1
18.0+1.0/-0.5
(0.5)
Thickness less than 0.38±0.05mm~0.5mm
P0 Accumulated pitch tolerance: ±1mm/20pitches.
( ) Bracketed figures are for consultation only
Rev. 1.50
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HT70XXA-1
Carrier Tape Dimensions
P 0
D
P 1
t
E
F
W
C
D 1
P
B 0
K 0
A 0
R e e l H o le
IC
M a r k in g
SOT89
Symbol
Description
Dimensions in mm
12.0+0.3/-0.1
W
Carrier Tape Width
P
Cavity Pitch
E
Perforation Position
1.75±0.10
8.0±0.1
F
Cavity to Perforation (Width Direction)
5.50±0.05
D
Perforation Diameter
1.5+0.1/-0.0
D1
Cavity Hole Diameter
1.5+0.1/-0.0
P0
Perforation Pitch
4.0±0.1
P1
Cavity to Perforation (Length Direction)
2.0±0.1
A0
Cavity Length
4.8±0.1
B0
Cavity Width
4.5±0.1
K0
Cavity Depth
1.8±0.1
t
Carrier Tape Thickness
C
Cover Tape Width
0.300±0.013
9.3±0.1
SOT23-5
Symbol
Description
Dimensions in mm
W
Carrier Tape Width
P
Cavity Pitch
E
Perforation Position
1.75±0.10
F
Cavity to Perforation (Width Direction)
3.50±0.05
D
Perforation Diameter
1.5+0.1/-0.0
D1
Cavity Hole Diameter
1.5+0.1/-0.0
P0
Perforation Pitch
P1
Cavity to Perforation (Length Direction)
2.00±0.05
A0
Cavity Length
3.15±0.10
B0
Cavity Width
3.2±0.1
K0
Cavity Depth
t
Carrier Tape Thickness
C
Cover Tape Width
Rev. 1.50
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8.0±0.3
4.0±0.1
4.0±0.1
1.4±0.1
0.20±0.03
5.3±0.1
15
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