UTC-IC USS4350G-AB3-R

UNISONIC TECHNOLOGIES CO., LTD
USS4350
NPN SILICON TRANSISTOR
50V, 5A NPN LOW VCE(SAT)
TRANSISTOR
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DESCRIPTION
The UTC USS4350 is a low VCE (SAT) NPN transistor designed
for applications, such as: DC/DC converter, supply line switching,
battery charger, linear voltage regulation, driver in low supply
voltage applications and inductive load driver.
„
FEATURES
* Collector-emitter saturation voltage:50V
* High collector current gain (hFE) under high IC conditions
* High collector current capability
* Higher efficiency resulting in less heat generation
* Complementary to UTC USS5350
* Halogen Free
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ORDERING INFORMATION
Ordering Number
Lead Free
Haiogen Free
USS4350L-AA3-R
USS4350G-AA3-R
USS4350L-AB3-R
USS4350G-AB3-R
Package
SOT-223
SOT-89
www.unisonic.com.tw
Copyright © 2011 Unisonic Technologies Co., Ltd
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Pin Assignment
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Packing
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USS4350
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NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
RATINGS
UNIT
60
V
50
V
6
V
DC
3
A
Collector Current
Peak
5
A
Peak Base Current
1
A
SOT-89
1.4
Power Dissipation (TC=25°C) (Note 2)
PD
W
SOT-223
2
Junction Temperature
TJ
150
°C
Operating Temperature
TOPR
-65 ~ +150
°C
Storage Temperature
TSTG
-65 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 6 cm2
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SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IBM
THERMAL DATA
PARAMETER
SYMBOL
MIN
TYP
MAX
UNIT
SOT-89
90
Junction to Ambient (Note)
θJA
°C/W
SOT-223
62.5
Note: Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 6 cm2
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ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
Collector Cut-off Current
Emitter Cut-off Current
SYMBOL
TEST CONDITIONS
ICBO
VCB=50 V, IE =0
IEBO
VEB=5 V, IC =0
IC=500 mA, IB=50 mA
Collector-Emitter Saturation Voltage
VCE(SAT) IC=1 A, IB=50 mA
IC=2 A, IB=200 mA (Note)
Base-Emitter Saturation Voltage
VBE(SAT) IC=2 A, IB=200 mA (Note)
Base-Emitter Turn-On Voltage
VBE(ON) VCE =2V; IC = 1 A (Note)
hFE1
VCE =2V, IC=500 mA
DC Current Gain
hFE2
VCE =2V, IC=1 A (Note)
hFE3
VCE =2V, IC=2 A (Note)
Equivalent On-Resistance
RCE(SAT) IC=2 A, IB=200 mA (Note)
Transition Frequency
fT
IC=100 mA, VCE=5 V, f=100 MHz
Collector Capacitance
CC
VCB=10 V; IE =Ie = 0; f =1 MHz
Note: Pulse test: tP ≤300 μs; Duty cycle≤2%
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
TYP
MAX UNIT
100
nA
100
nA
mV
90
170 mV
290 mV
V
1.2
V
1.1
110
<145
200
200
100
100
30
mΩ
MHz
pF
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USS4350
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NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICE
PC - TA
2800
2400
2000
SOT-223
1600
1200
800
SOT89
400
0
20
40
60
80 100 120 140 160
Ambient Temperature, Ta(°C)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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