UNISONIC TECHNOLOGIES CO., LTD UP2855 Preliminary PNP SILICON TRANSISTOR PNP MEDIUM POWER LOW SATURATION TRANSISTOR DESCRIPTION The UTC UP2855 is a transistor with low saturation voltage. It provides customers with very low on-state losses that makes it ideal for applications, such as driving and power management functions and DC-DC circuits. . FEATURES * Extremely low saturation voltages * Peak current up to 10A * 4A continuous current ORDERING INFORMATION Ordering Number Lead Free Halogen Free UP2855L-AA3-R UP2855G-AA3-R Note: Pin Assignment: B: Base C: Collector E: Emitter www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., Ltd Package SOT-223 Pin Assignment 1 2 3 B C E Packing Tape Reel 1 of 3 QW-R207-024.b UP2855 Preliminary PNP EPITAXIAL SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (Ta=25°C, unless otherwise specified ) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current (Note 1) Peak Pulse Current SYMBOL RATINGS UNIT -180 V -140 V -7 V -4 A -10 A 3.0 (Note 1) Power Dissipation PD W 1.6 (Note 2) Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. VCBO VCEO VEBO IC ICM THERMAL RESISTANCE PARAMETER RATINGS UNIT 42 (Note 1) Junction to Ambient θJA °C/W 78 (Note 2) Notes: 1. For a device surface mounted on 52mm x 52mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions. 2. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. SYMBOL ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) PARAMETER SYMBOL TEST CONDITIONS MIN Collector-Base Breakdown Voltage VCBO IC=-100μA -180 Collector-Emitter Breakdown Voltage VCER IC=-1μA, RB≤1kΩ -180 Collector-Emitter Breakdown Voltage VCEO IC=-10mA (Note 1) -140 Emitter-Base Breakdown Voltage VEBO IE=-100μA -7.0 VCB=-150V Collector Cut-Off Current ICBO VCB=-150V, Tamb=100°C VCB=-150V, Collector Cut-Off Current ICER R≤1kΩ Tamb=100°C Emitter Cut-Off Current IEBO VEB=-6V IC=-0.1A, IB=-5mA Collector-Emitter Saturation Voltage IC=-0.5A, IB=-50mA VCE(SAT) (Note 1) IC=-1A, IB=-100mA IC=-3A, IB=-300mA Base-Emitter Saturation Voltage VBE(SAT) IC=-3A, IB=-300mA(Note 1) Base-Emitter Turn-On Voltage VBE(ON) IC=-3A, VCE=-5V (Note 1) IC=-10mA, VCE=-5V 100 Static Forward Current Transfer IC=-1A, VCE=-5V 100 hFE Ratio (Note 1) IC=-3A, VCE=-5V 45 IC=-10A, VCE=-5V IC=-100mA, VCE=-10V Transition Frequency fT f=50MHz Output Capacitance (Note 1) COBO VCB=-10V, f=1MHz IC=-1A, VCC=-50V, tON Switching Times IB1=-IB2=-10mA tOFF Note: 1. Measured under pulsed conditions. Pulse width≤300μs; duty cycle≤2%. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw TYP -200 -200 -160 -8.0 <1 <1 <1 -40 -55 -85 -275 -940 -830 225 200 100 5 MAX -20 -0.5 -20 -0.5 -10 -60 -80 -120 -360 -1040 -930 UNIT V V V V nA μA nA μA nA mV mV mV mV mV mV 300 120 MHz 33 42 636 pF ns 2 of 3 QW-R207-024.b UP2855 Preliminary PNP EPITAXIAL SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R207-024.b