MAAPSS0113 DECT Power Amplifier 1880 - 1930 MHz M/A-COM Products Rev. V1 Features • Ideal for DECT Applications • Power Set Pin for Adjustable Output Power High Power Mode: 25 dBm Low Power Mode: 15 dBm • Power Gain: 25 dB Typical • Voltage Supply Compensation • Ramp Power Control: 1.7 V Enable • Micro-Amp Shutdown Current • Operates from 1.8 V to 3.6 V • Lead-Free 3 mm 12-Lead PQFN Package • 100% Matte Tin Plating over Copper • Halogen-Free “Green” Mold Compound • RoHS* Compliant and 260°C Reflow Compatible Functional Schematic Description The MAAPSS0113 is a three stage power amplifier designed for Digitally Enhanced Cordless Telephone applications. The power amplifier is available in a lead-free 3 mm 12-lead PQFN plastic package. The MAAPSS0113 features an integrated power enable pin (5) for accurate ramp control and a separate power mode pin (2) for current savings in a low power mode state. Both control pins operate with 1.7 V logic. A voltage compensation circuit is also included for applications where the amplifier supply voltage is not regulated and is directly connected to the battery. Ordering Information Pin Configuration Pin No. Pin Name Description 1 RFIN RF Input 2 VM Power Mode 3 GND Ground 4 N/C No Connection 5 VEN Power Enable 6 PFC Power Flatness Control 7 RFOUT / VCC3 RF Output, 3rd Stage Supply 1,2 Part Number Package 8 RFOUT / VCC3 RF Output, 3rd Stage Supply MAAPSS0113TR-3000 3000 piece reel 9 RFOUT / VCC3 RF Output, 3rd Stage Supply Sample Board 1880 - 1930 MHz tuning 10 VCC2 2nd Stage Supply MAAPSS0113SMB 11 GND Ground VCC1 1st Stage Supply GND RF & DC Ground 1. Reference Application Note M513 for reel size information. 2. All sample boards include 5 loose parts. 12 3 Pad 3. The exposed pad centered on the package bottom must be connected to RF and DC ground. * Restrictions on Hazardous Substances, European Union Directive 2002/95/EC. 1 ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for • North America Tel: 800.366.2266 / Fax: 978.366.2266 development. Performance is based on target specifications, simulated results, and/or prototype • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under developVisit www.macom.com for additional data sheets and product information. ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or volume is not guaranteed. information contained herein without notice. MAAPSS0113 DECT Power Amplifier 1880 - 1930 MHz M/A-COM Products Rev. V1 Electrical Specifications: F = 1880 - 1930 MHz, TA = 25 °C, Z0 = 50 Ω Parameter Input Power Test Conditions Units dBm Min. — Typ. 0 Max. — dB dB — — 11 12 — — POUT, High Power Mode (HPM) VM = 1.7 V, VCC = 3.0 V VCC = 2.4 V VCC = 2.0 V VCC = 1.8 V dBm dBm dBm dBm — — 22 — 26 25.5 24 23.5 27 — — — POUT vs. Temperature, HPM POUT vs. VEN Current, HPM POUT, Low Power Mode (LPM) Current, LPM Current, Shutdown TA = 0 °C to 50 °C, VCC = 2.4 V VEN = 1.6 t o 1.9 V , VCC = 2.4 V VM = 1.7 V, VCC = 3.0 V VM = 0 V, VCC = 2.4 V VM = 0 V, VCC = 2.4 V VCC = 3.0 V, VEN = 0.5 V dB dB mA dBm mA µA — — — 12 — — 0.8 1 350 15 95 1 — — 500 — 150 10 Control Pins VEN, VM low VEN, VM high VM current VEN current V V mA mA 0 1.6 — — — 1.7 0.5 1 0.5 1.9 1 2 dBc dBc — — -33 -35 — — dB — 46 — VM = 0 V VM = 1.7 V Input Return Loss VM = 1.7 V, VCC = 2.4 V Harmonics Forward Isolation VEN = 0 V, VCC = 2.4 V Stability +1.5 V < VCC < +3.5 V, POUT = HPM & LPM, VSWR < 6:1 -20°C < TA < +70ºC Turn on/off time ton: RF burst to (Avg Power – 1 dB) toff: (Avg Power – 1 dB) to RF off Absolute Maximum Ratings 4,5,6 Parameter Absolute Maximum Input Power 5 dBm Operating Supply Voltage 4.0 Volts Operating Control Voltage 3.0 Volts Operating Temperature -20 °C to +85 °C Channel Temperature 150 °C Storage Temperature -40 °C to +150 °C 4. Exceeding any one or combination of these limits may cause permanent damage to this device. 5. M/A-COM does not recommend sustained operation near these survivability limits. 6. For operation above 4V as required for 3 cell systems, a dropping diode is required. See application note page 6. 2 2fo 3fo All spurs < -60 dBc µS µS — — 3 3 — — Logic Table 7 VEN 0 0 1 1 VM 0 1 0 1 State OFF OFF LPM HPM 7. Logic 1 = 1.6 V to 1.9 V, Logic 0 = 0 V to 0.5 V. Operating the MAAPSS0113 The MAAPSS0113 is sensitive to electrostatic discharge (ESD). Use proper ESD control techniques when handling this device. To operate the MAAPSS0113, follow these steps. Ramp down or shut down in reverse order. 1. Apply VCC (2.4 V). 2. Apply VM (0 or 1.7 V). 3. Apply PIN (-2 to 2 dBm). 4. Ramp VEN from 0 to 1.7 V. ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for • North America Tel: 800.366.2266 / Fax: 978.366.2266 development. Performance is based on target specifications, simulated results, and/or prototype • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under developVisit www.macom.com for additional data sheets and product information. ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or volume is not guaranteed. information contained herein without notice. MAAPSS0113 DECT Power Amplifier 1880 - 1930 MHz M/A-COM Products Rev. V1 Recommended PCB Configuration Evaluation Board Schematic VBAT D1 VCC C3 C2 C6 C7 C4 C8 RFIN T2 L1 C10 VM T5 C1 C9 PG PG RFOUT PG PG VEN R1 T6 C11 R2 C5 Parts List Transmission Line Dimensions, 0.20 mm thick FR4 Component Value Foot Print Manufacturer C1 - C5 1 µF 0402 Murata C6 68 pF 0402 Murata Designator Length (mm) Width (mm) T1 10.67 .254 T2 2.22 .380 C7 18 pF 0402 Murata 330 pF 0402 Murata T3 1.80 .380 C8 T4 0.735 .380 C9 3 pF 0402 Murata T5 4.275 .380 C10 10 pF 0402 Murata T6 3.13 .254 C11 15000 pF 0402 Murata L1 10 nH 0402 Coilcraft R1 158 Ω 0402 Panasonic R2 15 KΩ 0402 Panasonic 3 ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for • North America Tel: 800.366.2266 / Fax: 978.366.2266 development. Performance is based on target specifications, simulated results, and/or prototype • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under developVisit www.macom.com for additional data sheets and product information. ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or volume is not guaranteed. information contained herein without notice. MAAPSS0113 DECT Power Amplifier 1880 - 1930 MHz M/A-COM Products Rev. V1 High Power Mode Typical Performance, VM = 1.7 V (using the supplied sample board BOM) POUT, PAE, ICC vs. PIN @ 2.4 V, 1900 MHz POUT, PAE, ICC vs. VCC @ 1900 MHz 50 0.5 50 0.4 40 0.3 30 0.5 I PAE 40 CC I PAE CC 30 P 0.4 P 0.3 OUT OUT 20 0.2 20 0.2 10 0.1 10 0.1 0.0 0 -15 -10 -5 0 5 0 1.5 2.0 2.5 P (dBm) V IN CC POUT vs. Temperature @ 1900 MHz, PIN = 0 dBm 0.0 3.5 3.0 (Volts) ICC vs. Temperature @ 1900 MHz, PIN = 0 dBm 0.50 28 Vcc = 3.0 V Vcc = 2.4 V Vcc = 2.0 V 0.45 26 0.40 0.35 24 0.30 22 0.25 Vcc = 3.0 V Vcc = 2.4 V Vcc = 2.0 V 20 -20 -10 0 10 20 30 40 50 60 70 0.20 -20 -10 0 10 20 30 40 50 60 70 Temperature (°C) Temperature (°C) POUT, PAE, ICC vs. Frequency @ VCC = 2.4 V, PIN = 0 dBm POUT, 2fo, 3fo vs. PIN @ 2.4 V 50 30 P 0.5 OUT 20 PAE 40 0.4 I 10 CC 30 0 0.3 P 2f OUT o -10 3f o 20 0.2 10 0.1 -20 -30 -40 -15 -10 -5 P (dBm) 4 IN 0 5 0 1880 1890 1900 1910 1920 0.0 1930 Frequency (MHz) ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for • North America Tel: 800.366.2266 / Fax: 978.366.2266 development. Performance is based on target specifications, simulated results, and/or prototype • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under developVisit www.macom.com for additional data sheets and product information. ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or volume is not guaranteed. information contained herein without notice. MAAPSS0113 DECT Power Amplifier 1880 - 1930 MHz M/A-COM Products Rev. V1 Low Power Mode Typical Performance, VM = 0 V (using the supplied sample board BOM) POUT, ICC vs. PIN @ 2.4 V, 1900 MHz POUT, ICC vs. VCC @ 1900 MHz 25 20 P 0.25 20 0.20 16 0.5 0.4 P OUT OUT 15 0.15 12 0.3 0.10 8 0.2 0.05 4 0.00 0 1.5 I CC 10 I 5 0 -15 -10 -5 0 5 CC 2.0 0.1 2.5 P (dBm) V IN CC POUT vs. Temperature @ 1900 MHz, PIN = 0 dBm 20 0.0 3.5 3.0 (Volts) ICC vs. Temperature @ 1900 MHz, PIN = 0 dBm 0.125 0.100 15 0.075 10 0.050 Vcc = 3.0 V Vcc = 2.4 V Vcc = 2.0 V 5 0 -20 Vcc = 3.0 V Vcc = 2.4 V Vcc = 2.0 V 0.025 0.000 -10 0 10 20 30 40 50 60 -20 70 -10 0 10 20 30 40 50 60 70 Temperature (°C) Temperature (°C) Pout vs. VEN @ VCC = 2.4 V, VM = 1.7 V, PIN = 0 dBm S11 vs. Frequency, State @ VCC = 2.4V 0 30 20 Off LPM HPM -4 10 0 -8 -10 -12 -20 -30 -16 -40 -50 0.0 5 0.2 0.4 0.6 0.8 1.0 V (V) EN 1.2 1.4 1.6 1.8 -20 1.88 1.89 1.90 1.91 1.92 1.93 Frequency (GHz) ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for • North America Tel: 800.366.2266 / Fax: 978.366.2266 development. Performance is based on target specifications, simulated results, and/or prototype • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under developVisit www.macom.com for additional data sheets and product information. ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or volume is not guaranteed. information contained herein without notice. MAAPSS0113 DECT Power Amplifier 1880 - 1930 MHz M/A-COM Products Rev. V1 High Voltage Operation (3 Cells) 4.0 The MAAPSS0113 amplifier product is designed for use in phone systems using 2 battery cells for mobile units (3.6V charging, 2.4V nom.) or up to 3.6V regulated for base-station units. For operation with higher supply voltages such as in 3 cell mobile units (4.5V charging), a dropping diode is required to reduce the voltage to the amplifier. An example schematic is shown in Figure 1. A series diode is placed between the battery supply and the three stages of the amplifier. An example diode is the Vishay ES1A surface mount diode. This diode has a maximum forward current of 1A and a forward voltage drop of 1V. 3.5 VBAT 3 Cell Changing Voltage 2.5 Nominal 3 Cell Voltage 2.0 1.5 1.0 0.5 0.0 3.0 3.2 3.4 3.6 3.8 4.0 4.2 4.4 4.6 Battery Voltage (V) Figure 2. VCC vs. 3 cell battery voltage with series dropping diode. 30 D1 25 VCC 20 C2 C3 C4 C6 C7 C8 15 10 HPM LPM 5 T4 T3 3.0 0 VCC1 VCC2 3.0 VCC3 Figure 1. Supply schematic for 3 cell operation showing external dropping diode, ex. Vishay ES1A 3.2 3.4 3.6 3.8 4.0 4.2 4.4 4.6 Battery Voltage (V) Figure 3. Pout vs. 3 cell battery voltage 0.6 Figure 2 shows the measured affect of the dropping diode on the supply voltage (VCC) to the amplifier. Because of the approximate 1V forward drop of the diode, the maximum supply to the amplifier is 3.6V for a charging condition of 4.5V. Figures 3 and 4 show the power and current versus a 3 cell battery range, respectively. The 3 cell performance with the dropping diode is very similar to the electrical specification at 2.4V shown on page 2. The key to matching this data is choosing a diode with approximately 1V forward drop. Because of this forward drop, the maximum voltage from the battery supply can increase from 4V to 5V. 0.5 0.4 0.3 HPM LPM 0.2 0.1 0 3.0 3.2 3.4 3.6 3.8 4.0 4.2 4.4 4.6 Battery Voltage (V) Figure 4. Current vs. 3 cell battery voltage 6 ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for • North America Tel: 800.366.2266 / Fax: 978.366.2266 development. Performance is based on target specifications, simulated results, and/or prototype • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under developVisit www.macom.com for additional data sheets and product information. ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or volume is not guaranteed. information contained herein without notice. MAAPSS0113 DECT Power Amplifier 1880 - 1930 MHz M/A-COM Products Rev. V1 Lead-Free 3 mm 12-lead PQFN† † Reference Application Note M538 for lead-free solder reflow recommendations. Meets JEDEC moisture sensitivity level 1 requirements. Handling Procedures Please observe the following precautions to avoid damage: Static Sensitivity Gallium Arsenide Integrated Circuits are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these devices. 7 ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for • North America Tel: 800.366.2266 / Fax: 978.366.2266 development. Performance is based on target specifications, simulated results, and/or prototype • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under developVisit www.macom.com for additional data sheets and product information. ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or volume is not guaranteed. information contained herein without notice.