MA4AGBLP912 AlGaAs Beamlead PIN Diode V4 Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ Topside Low Series Resistance Low Capacitance 5 Nanosecond Switching Speed Can be Driven by a Buffered +5V TTL Silicon Nitride Passivation Polyimide Scratch Protection RoHS Compliant Description M/A-COM Technology Solutions MA4AGBLP912 is an Aluminum-Gallium-Arsenide anode enhanced, beam lead PIN diode. AlGaAs anodes, which utilize M/A-COM Tech’s patented hetero-junction technology, produce less diode “On” resistance than conventional GaAs or silicon devices. This device is fabricated in a OMCVD system using a process optimized for high device uniformity and extremely low parasitics. The result is a diode with low series resistance, 4Ω, low capacitance, 28fF, and an extremely fast switching speed of 5nS. It is fully passivated with silicon nitride and has an additional polymer coating for scratch protection. The protective coating prevents damage to the junction and the anode air bridges during handling and assembly. Applications The ultra low capacitance of the MA4AGBLP912 device makes it ideally suited for use up to 40GHz when used in a shunt configuration. The low RC product and low profile of the beamlead PIN diode allows for use in microwave switch designs, where low insertion loss and high isolation are required. The operating bias conditions of +10mA for the low loss state, and 0V, for the isolation state permits the use of a simple +5V TTL gate driver. AlGaAs, beamlead diodes, can be used in switching arrays on radar systems, high speed ECM circuits, optical switching networks, instrumentation, and other wideband multi-throw switch assemblies. Bottom Absolute Maximum Ratings @ TAMB = 25°C (unless otherwise specified) Parameter Reverse Voltage Absolute Maximum -50V Operating Temperature -65°C to +125°C Storage Temperature -65°C to +150°C Junction Temperature +175°C Forward DC Current 40mA C.W. Incident Power +23dBm Mounting Temperature +235°C for 10 seconds 1 ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for • North America Tel: 800.366.2266 / Fax: 978.366.2266 development. Performance is based on target specifications, simulated results, and/or prototype • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under developVisit www.macom.com for additional data sheets and product information. ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or volume is not guaranteed. information contained herein without notice. MA4AGBLP912 AlGaAs Beamlead PIN Diode V4 Electrical Specifications at TAMB = 25°C Test Conditions Parameters Units Min Typical Max. Total Capacitance @ –5V/1 MHz Ct fF – 26 30 Forward Resistance @ +20mA/1 GHz Rs Ohms – 4 4.9 Forward Voltage at +10mA Vf Volts 1.2 1.36 1.5 Leakage Current at –40 V Ir nA – 50 300 Minority Carrier Lifetime TL nS – 5 10 INCHES DIM 2 MM MIN. MAX. MIN. MAX. A 0.009 0.013 0.2286 0.3302 B 0.0049 0.0089 0.1245 0.2261 C 0.0037 0.0057 0.0940 0.1448 D 0.0049 0.0089 0.1245 0.2261 E 0.002 0.006 0.0508 0.1524 F 0.0218 0.0278 0.5537 0.70612 ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for • North America Tel: 800.366.2266 / Fax: 978.366.2266 development. Performance is based on target specifications, simulated results, and/or prototype • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under developVisit www.macom.com for additional data sheets and product information. ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or volume is not guaranteed. information contained herein without notice. MA4AGBLP912 AlGaAs Beamlead PIN Diode V4 Diode Model Rs Ls = 0.5 Ct MA4AGBLP912 SPICE Model Is=1.0E-14 A Vi=0.0 V wBv= 50 V μe-= 8600 cm^2/V-sec wPmax= 100 mW Ffe= 1.0 Wi= 3.0 um Rr= 10 K Ohms Cjmin= 0.020 pF Tau= 10 nsec Rs(I)= Rc + Rj(I) = 0.10 Ohm + Rj(I) Cj0= 0.022 pF Vj= 1.35 V M= 0.5 Fc= 0.5 Imax= 0.04 A Kf= 0.0 Af=1.0 3 ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for • North America Tel: 800.366.2266 / Fax: 978.366.2266 development. Performance is based on target specifications, simulated results, and/or prototype • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under developVisit www.macom.com for additional data sheets and product information. ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or volume is not guaranteed. information contained herein without notice. MA4AGBLP912 AlGaAs Beamlead PIN Diode V4 Handling and Assembly Procedures The following precautions should be observed to avoid damaging these devices. Cleanliness These devices should be handled in a clean environment. Static Sensitivity Aluminum Gallium Arsenide PIN diodes are Class 0, HBM, ESD sensitive and can be damaged by static electricity. Proper ESD techniques should be used when handling these devices. General Handling These devices have a polymer layer which provides scratch protection for the junction area and the anode air bridge. Beam lead devices must, however, be handled with extreme care since the leads may easily be distorted or broken by the normal pressures exerted when handled with tweezers. A vacuum pencil with a #27 tip is recommended for picking and placing. Attachment These devices were designed to be inserted onto hard or soft substrates. Recommended methods of attachment include thermo-compression bonding, parallel-gap welding and electrically conductive silver epoxy. Ordering Information Part Number Packaging MA4AGBLP912 Gel Pak 4 ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for • North America Tel: 800.366.2266 / Fax: 978.366.2266 development. Performance is based on target specifications, simulated results, and/or prototype • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under developVisit www.macom.com for additional data sheets and product information. ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or volume is not guaranteed. information contained herein without notice.