UBA2212 Half-bridge power IC family for CFL lamps Rev. 1 — 9 December 2011 Objective data sheet 1. General description The UBA2212 family of integrated circuits are a range of high voltage monolithic ICs for driving Compact Fluorescent Lamps (CFL) in half-bridge configurations. The family is designed to provide easy integration of lamp loads across a range of burner power and mains voltages. 2. Features and benefits 2.1 System integration Integrated half-bridge power transistors UBA2212CT: 120 V; 2 ; 3.5 A maximum ignition current UBA2212CP: 120 V; 2 ; 3.5 A maximum ignition current Integrated bootstrap diode Integrated high-voltage supply 2.2 General Adjustable current controlled preheat mode enables the preheat time (tph) to be set RMS current control 2.3 Fast and smooth light out Boost with externally controlled timing Temperature controlled timing during boost state Smooth transition from ignition to boost and boost to burn state 2.4 Burner lifetime Current controlled preheat with adjustable preheat time Minimum glow time control to support cold start Lamp power independent from mains voltage variations Lamp inductor saturation protection during ignition UBA2212 NXP Semiconductors Half-bridge power IC family for CFL lamps 2.5 Safety Saturation Current Protection (SCP) OverTemperature Protection (OTP) Capacitive Mode Protection (CMP) Overpower control System shutdown when the burner fails to ignite 2.6 Ease of use Adjustable operating frequency for easy fit with various burners Each device in the family incorporates the same controller functionality ensuring easy power scaling and roll-out across a complete range of CFLs 3. Applications Compact Fluorescent Lamps up to 23 W for 120 V (AC) indoor and outdoor applications 4. Ordering information Table 1. Ordering information Type number UBA2212 Objective data sheet Package Name Description Version UBA2212CP/1 DIP14 plastic dual inline package; 14 leads SOT27-1 UBA2212CT/1 SO14 plastic small outline package; 14 leads; body width 3.9 mm SOT108-1 All information provided in this document is subject to legal disclaimers. Rev. 1 — 9 December 2011 © NXP B.V. 2011. All rights reserved. 2 of 20 UBA2212 NXP Semiconductors Half-bridge power IC family for CFL lamps 5. Block diagram startup UBA2212 VDD DVDT HV 6 5 3 4 PGND VDD 14 FS VDD VO(ref)RMS OTP170 OTP120 Isat reset HSPT DRIVER LATCH reset HSPT set 1 OUT GLOW AND Isat CONTROL PULSE RC 7 SW 8 boost/burn VOLTAGE CONTROLLED OSCILLATOR fosc :2 HS on NON-OVERLAP LS on TIMER VSW CB 9 LSPT preheat RMS control preheat LSPT DRIVER 12 SENSE boost/burn 10 CSI X2 - VO(ref)RMS2 preheat PREHEAT TIMER SGND 2, 11, 13 preheat state boost BOOST TIMER Vref(ph) boost state burn state Vref(boost) Vref(burn) 001aan301 Fig 1. Block diagram UBA2212 Objective data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 9 December 2011 © NXP B.V. 2011. All rights reserved. 3 of 20 UBA2212 NXP Semiconductors Half-bridge power IC family for CFL lamps 6. Pinning information 6.1 Pinning OUT 1 14 FS SGND 2 13 SGND HV 3 12 SENSE PGND 4 DVDT 5 VDD 6 9 RC 7 8 UBA2212 OUT 1 14 FS SGND 2 13 SGND HV 3 12 SENSE 11 SGND PGND 4 10 CSI DVDT 5 CB VDD 6 9 CB SW RC 7 8 SW UBA2212 10 CSI 001aan336 aaa-000382 Fig 2. 11 SGND Pin configuration for UBA2212CP (SOT27-1) Fig 3. Pin configuration for UBA2212CT (SOT108-1) 6.2 Pin description Table 2. UBA2212 Objective data sheet Pin description Symbol Pin Description OUT 1 half-bridge output SGND 2, 11, 13 signal ground HV 3 high-voltage supply PGND 4 DVDT supply ground DVDT 5 DVDT supply input VDD 6 internal low-voltage supply output RC 7 internal oscillator input SW 8 sweep timing and VCO input CB 9 boost timing capacitor/preheat integrating capacitor CSI 10 current feedback sense input SENSE 12 voltage sense for preheat and RMS control FS 14 high-side floating supply output All information provided in this document is subject to legal disclaimers. Rev. 1 — 9 December 2011 © NXP B.V. 2011. All rights reserved. 4 of 20 UBA2212 NXP Semiconductors Half-bridge power IC family for CFL lamps 7. Functional description 7.1 Supply voltage The UBA2212 family is powered using a start-up current source and a DVDT supply. When the voltage on pin HV increases, the VDD capacitor (CVDD) is charged using the internal Junction gate Field-Effect Transistor (JFET) current source. The voltage on pin VDD rises until VDD equals VDD(start). The start-up current source is then disabled. The half-bridge starts switching causing the charge pump to generate the required VDD supply. The amount of current flowing towards VDD equals VHV CDVDT f where f represents the momentary frequency. The charge pump consists of an external half-bridge capacitor (CDVDT). The DIP14 and SO14 packages contain two internal diodes with an internal Zener diode. The Zener diode ensures the VDD voltage cannot rise above the maximum VDD rating. The DVDT supply has its own ground pin (PGND) to prevent large peak currents from flowing through the external small signal ground pin (SGND). The start-up current source is enabled when the voltage on pin VDD is below VDD(stop). 7.2 Start-up state When the supply voltage on pin VDD increases, the IC enters the start-up state. In the start-up state, the High-Side Power Transistor (HSPT) is switched off and the Low-Side Power Transistor (LSPT) is switched on. The circuit is reset and the capacitors on the bootstrap pin FS (Cbs) and the low-voltage supply pin VDD (CVDD) are charged. Pins RC and SW are switched to ground. When pin VDD is above VDD(start), the start-up state is exited and the preheat state is entered. If the voltage on pin VDD falls below VDD(stop), the system returns to the start-up state. Remark: If OTP is active, the IC remains in the start-up state for as long as this is the case. The VDD voltage slowly oscillates between VDD = VDD(stop) and VDD = VDD(start). 7.3 Reset A DC reset circuit is incorporated in the high-side driver. The high-side transistor is switched off when the voltage on pin FS is below the high-side lockout voltage. 7.4 Oscillation control The oscillation frequency is based on the 555-timer function. A self oscillating circuit is created comprising the external components: resistors Rosc, RSENSE and capacitor Cosc. Rosc and Cosc determine the nominal oscillating frequency. An internal divider 0.5 fosc(int) is used to generate the accurate 50 % duty cycle. The divider sets the bridge frequency at half the oscillator frequency. The input on pin SW generates signal VSW. The VSW signal is used to determine the frequency in all states except preheat and boost. Signal VSW(ph) is an internally generated signal used to determine the frequency during the preheat state. UBA2212 Objective data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 9 December 2011 © NXP B.V. 2011. All rights reserved. 5 of 20 UBA2212 NXP Semiconductors Half-bridge power IC family for CFL lamps The output voltage of the bridge changes with the falling edge of the signal on pin RC. The nominal half-bridge frequency is shown in Equation 1: 1 f osc nom = ------------------------------------------k osc R osc C osc (1) The maximum frequency is 2.5 fosc(nom) and is set at VSW. An overview of the oscillator, internal LSPT and HSPT drive signals and the output is shown in Figure 4. VRC 0 time (s) HSPT driver time (s) 0 LSPT driver time (s) 0 VOUT half-bridge time (s) 0 001aam035 Fig 4. Oscillator, HSPT/LSPT drivers and output signals 7.5 Preheat state The IC enters the preheat state, the half-bridge circuit starts oscillating when the voltage on pin VDD > VDD(start) and OTP is not activated. Current ISW charges the capacitor on pin SW for the preheat timing. The RMS current control is active. This control sets the frequency so that the RMS voltage across the sense resistor (RSENSE) is equal to Vref(ph). This action ensures that RMS current through filament of the lamp is constant. In addition, it ensures the power delivered is controlled to a pre-defined level during preheat stage. During one oscillator cycle, the voltage on pin SENSE is squared and converted into a positive current. This discharge current is added to the external capacitor CCB. During the other oscillator clock cycle, the input of the squarer is connected to the internal reference voltage Vref(ph). This voltage is squared and converted into a negative current. This charge current is also added to capacitor CCB. When both currents are equal, then the Equation 2 is true: T osc 1 ---------T osc 0 T osc 1 V SENSE t dt = ---------T osc 2 V ref ph 2 dt (2) 0 Taking the square root of both sides results in: UBA2212 Objective data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 9 December 2011 © NXP B.V. 2011. All rights reserved. 6 of 20 UBA2212 NXP Semiconductors Half-bridge power IC family for CFL lamps T osc 1 ---------T osc T osc 2 V SENSE t dt = 0 1 ---------T osc V ref ph 2 (3) dt 0 or: (4) V SENSE RMS = R SENSE I LS = V ref ph or: V ref ph I LS = -----------------R SENSE (5) Thus the current through the power switches together with the lamp filament (via a constant ratio) is constant. In addition, the internal reference voltage Vref(ph) and the external resistor RSENSE define the current; see Figure 4. Vlamp fosc(nom) ... ... VCB VSW VCO input time (s) preheat burn ignition and boost transition Fig 5. 001aan302 Vlamp, fosc(int), VSW and VSW(ph) plotted against time 7.6 Ignition state The ignition state is entered after the preheat state has finished. Current ISW charges the capacitor on pin SW (CSW) up to 0.6 VH(RC) which corresponds to the frequency fosc(nom). During this frequency sweep (fSW), the resonance frequency is reached resulting in the ignition of the lamp (see Figure 4). The lamp inductor (Llamp) and lamp capacitor (Clamp) set the resonance frequency. The ignition state ends when the voltage on pin SW (VSW) reaches 0.6 VH(RC). UBA2212 Objective data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 9 December 2011 © NXP B.V. 2011. All rights reserved. 7 of 20 UBA2212 NXP Semiconductors Half-bridge power IC family for CFL lamps 7.7 Boost state and transition to steady state The boost state is entered after ignition. The RMS current control circuit is reused in boost stage. The output of RMS current control circuit together with input of VCO is switched to capacitor CSW. At the same time, the input of RMS current control circuit is switched to pin CSI from pin SESNE to sense lamp current. On pin CB, capacitor CCB is connected to the boost timer input of to control the boost time. VSW goes up because the lamp remains off causing the frequency to continue fall. When ignition frequency is reached, the lamp ignites. VSW increases to a given voltage to set the lamp current to the level pre-defined by the internal boost reference and resistor RCSI. The calculation is shown in Equation 6: V ref bst Boost I lamp = ------------------R CSI (6) When boost timer gives a signal to indicate that boost stage has ended, the transition from boost to steady state starts to avoid flicker. At this stage, boost transition timer is active to define the transition time, which is also realized with capacitor CCB on CB pin. 7.8 Steady state When the RMS current control circuit leaves the system operating at the normal lamp current, it enters the steady state. In this state, the voltage on pin CB is fixed and the voltage on pin SW is controlled by a feedback loop. This feature enables the lamp current to be independent of the mains or lamp voltage. This results in constant IC thermal dissipation and temperature at the defined ambient temperature. The same analysis as with the preheat stage can be used to express lamp current (Equation 7): V ref burn Burn I lamp = ----------------------R CSI (7) Therefore, the boost-burn ratio can be found as shown in Equation 8: V ref bst Boost to burn ratio = ----------------------V ref burn UBA2212 Objective data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 9 December 2011 (8) © NXP B.V. 2011. All rights reserved. 8 of 20 UBA2212 NXP Semiconductors Half-bridge power IC family for CFL lamps 7.9 Non-overlap time The non-overlap time is defined as the time when both MOSFETs are not conducting. The non-overlap time is fixed internally and is fixed at the tno value (see Table 5). 7.10 OverTemperature Protection (OTP) OTP is active in all states except boost. When the die temperature reaches the OTP activation threshold (Tth(act)otp), the oscillator is stopped and the power switches (LSPT/HSPT) are set to the start-up state. When the oscillator is stopped, the DVDT supply no longer generates the supply current IDVDT. Voltage VDD gradually decreases and the start-up state is entered as described in Section 7.2 on page 5. OTP is reset when the temperature < Tth(rel)otp. During boost state, the threshold of temperature is Tj(end)bst which is lower than Tth(otp). When the die temperature has reached Tj(end)bst, the boost state ends, the IC enters steady state and OTP is enabled. 7.11 Minimum glow time control If the preheat time is set too short or omitted, the lamp electrodes do not have the correct temperature in the ignition state. This results in instant light but also in a reduced switching lifetime because when the electrode temperature is too low electrode sputtering and damage occur. The minimum glow time control minimizes electrode damage by ensuring maximum power use during the glow phase to heat the electrodes heat as quickly as possible (see Figure 6). Vlamp fosc ... ... VCB VSW VCO input time (s) preheat ignition and boost burn transition Fig 6. 001aan370 Vlamp, fosc(int), VSW and VSW(ph) plotted against time Remark: . The glow time control is active as tph is too short to preheat the electrodes UBA2212 Objective data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 9 December 2011 © NXP B.V. 2011. All rights reserved. 9 of 20 UBA2212 NXP Semiconductors Half-bridge power IC family for CFL lamps 7.12 Saturation Current Protection (SCP) A critical parameter in the design of the lamp inductor is its saturation current. When the momentary inductor exceeds its saturation current, the inductance drops significantly. The inductor current and the current flowing through the LSPT and HSPT power switches increases rapidly if this happens. The increase can cause the current to exceed the half-bridge power transistors maximum ratings. Saturation of the lamp inductor is likely to occur in cost-effective and miniaturized CFLs. The UBA2212 family internally monitors the power transistor current. When this current exceeds the momentary rating of the internal half-bridge power transistors, the conduction time is reduced and the frequency is slowly increased (by discharging CSW). This function causes the system to balance at the edge of the current rating of the power switches. 7.13 Capacitive Mode Protection (CMP) In preheat stage, when CMP is detected, discharge of capacitor CCB occurs by a current source which is a function of the hard switching level. Figure 7 shows the relationship between the discharge current and hard switching level. The discharge current is transferred to voltage and it uses a 100 nF capacitor in the example). This discharge current is larger than the output current of RMS control circuit, so that CMP controls the system operation. The frequency increases very slowly until hard switching is no longer detected. Once CMP is no longer active, the system increases to the preheating frequency determined by defined preheat current. In boost and burn state, VSW determines the operating frequency. The RMS current control circuit and CMP circuit control this frequency. When capacitive mode is detected, capacitor CSW is mainly controlled by the CMP circuit. capacitor CSW is discharged by a current source, which is also dependent on hard switching voltage level (as shown in Figure 7). The operating frequency fosc, increase until CMP is no longer detected. Remark: CMP always controls the operation. If the lamp or preheat current is smaller than the defined value before CMP is detected, the system moves to the border of hard switching ~25 V. The set value is not achievable. Change the LC tank to get a higher resonant gain which enables the required lamp or preheat current to be obtained. UBA2212 Objective data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 9 December 2011 © NXP B.V. 2011. All rights reserved. 10 of 20 UBA2212 NXP Semiconductors Half-bridge power IC family for CFL lamps 8. Limiting values Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit operating - 202 V mains transients during 0.5 s - 250 V VHV VHV + 14 V 0 14 V 5 +5 V VHV voltage on pin HV VFS voltage on pin FS VDD supply voltage VSENSE voltage on pin SENSE VRC voltage on pin RC IRC < 1 mA 0 VDD V VSW voltage on pin SW ISW < 1 mA 0 VDD V IOUT current on pin OUT Tj < 125 C 3.5 +3.5 A IDVDT current on pin DVDT Tj < 125 C 2.5 +2.5 A Vi(CSI) input voltage on pin CSI Tj > 40 C 3.5 +3.5 V SR slew rate 4 +4 V/ns Tj junction temperature 40 +150 C Tamb ambient temperature 40 +150 C Tstg storage temperature 55 +150 C VESD electrostatic discharge voltage pins HV, FS, OUT - 800 V pins SW, RC, VDD, DVDT - 2.5 kV - 400 V DC supply repetitive output on pin OUT Human Body Model (HBM): [1] Charged Device Model (CDM): pins SW, RC, VDD, DVDT, CSI and CB [1] In accordance with the Human Body Model (HBM): equivalent to discharging a 100 pF capacitor through a 1.5 k series resistor. 9. Thermal characteristics Table 4. Symbol Thermal characteristics Parameter Conditions Typ Unit DIP14 package Rth(j-a) Rth(j-c) thermal resistance from junction to ambient thermal resistance from junction to case in free air [1] 70 K/W in free air [1] 16 K/W SO14 package Rth(j-a) thermal resistance from junction to ambient in free air [1] 95 K/W Rth(j-c) thermal resistance from junction to case in free air [1] 16 K/W [1] UBA2212 Objective data sheet In accordance with IEC 60747-1 All information provided in this document is subject to legal disclaimers. Rev. 1 — 9 December 2011 © NXP B.V. 2011. All rights reserved. 11 of 20 UBA2212 NXP Semiconductors Half-bridge power IC family for CFL lamps 10. Characteristics Table 5. Characteristics Tj = 25 C; all voltages are measured with respect to SGND; positive currents flow into the IC. Symbol Parameter Conditions Min Typ Max Unit Low-voltage supply Start-up state IHV current on pin HV VHV = 60 V - 1.5 - mA VDD(start) start supply voltage oscillation start 11.5 12.5 13.5 V VDD(stop) stop supply voltage oscillation stop 8.5 9 9.5 V VDD(hys) hysteresis of supply voltage start stop VDD(reg) regulation supply voltage Isink sink current capability of VDD regulator on-state resistance HS; VHV = 170 V; ID = 200 mA - 2 - LS; VHV = 170 V; ID = 200 mA - 2 - - 1.4 - HS; IF = 320 mA - 1.1 - V LS; IF = 320 mA - 1.2 - V bootstrap diode; IF = 1 mA 0.7 1 1.3 V 3 3.5 4 V - 12.5 - V 6 - - mA Output stage Ron Ron(150)/ Ron(25) on-state resistance ratio (150 C to 25 C) VFd diode forward voltage tno non-overlap time 0.9 1.2 1.5 s VFS voltage on pin FS UnderVoltage LockOut with respect to pin OUT 3.9 4.5 5.1 V IFS current on pin FS VHV = 170 V; VFS = 12 V 10 14 18 A Isat saturation current HS; VDS = 14 V; Tj 125 C 3.5 - - A LS; VDS = 14 V; Tj 125 C 3.5 - - A Internal oscillator fosc(min) minimum oscillator frequency Rosc = 100 k; Cosc = 220 pF; VSW = VDD - 36 - kHz fosc(max) maximum oscillator frequency Rosc = 100 k; Cosc = 220 pF; VSW = 0 V - 104 - kHz Rosc = 100 k; Cosc = 220 pF; T = 20 to +150 C - 2 - % fosc(nom)/T nominal oscillator frequency variation with temperature kH high-level trip point factor 0.382 0.395 0.408 kL low-level trip point factor 0.030 0.033 0.036 VH(RC) HIGH-level voltage on pin RC trip point; VH(RC) = kH VDD 4.58 4.94 VL(RC) LOW-level voltage on pin RC trip point; VL(RC) = kL VDD 0.367 0.413 0.458 V Kosc oscillator constant Rosc = 100 k; Cosc = 220 pF 1.065 1.1 1.135 - 620 - mV 5.29 V Preheat function Vref(ph) preheat reference voltage tph preheat time CSW = 47 nF - 0.55 - s fph preheat frequency Rosc = 100 k; Cosc = 220 pF - 90 - kHz UBA2212 Objective data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 9 December 2011 © NXP B.V. 2011. All rights reserved. 12 of 20 UBA2212 NXP Semiconductors Half-bridge power IC family for CFL lamps Table 5. Characteristics …continued Tj = 25 C; all voltages are measured with respect to SGND; positive currents flow into the IC. Symbol Parameter Conditions Min Typ Max Unit VRC voltage on pin RC trip point during preheat state - 0.3 - V Boost function VO(ref)bst boost reference output voltage Tj(end)bst boost end junction temperature tbst boost time tt(bst-burn) VDD = 12 V; HV = 30 V; VSW = 3 V - 450 - mV - 90 - C CSW = 220 nF - 48 - s transition time from boost to burn CSW = 220 nF - 2 - s mV RMS current control function VO(ref)RMS RMS reference output voltage VDD = 12 V; HV = 30 V; VSW = 3 V - 300 - NLCBR lamp current boost ratio boost and steady state - 1.5 - OTP function Tth(act)otp overtemperature protection activation threshold temperature - 170 - C Tth(rel)otp overtemperature protection release threshold temperature - 100 - C UBA2212 Objective data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 9 December 2011 © NXP B.V. 2011. All rights reserved. 13 of 20 UBA2212 NXP Semiconductors Half-bridge power IC family for CFL lamps 11. Application information LFILT C6 CDVDT D1 L2 D4 CFS U1 OUT SGND L_N CFL HV PGND CBUF AC input DVDT Rfuse L_L VDD C7 C5 D2 Rosc C8 CVDD D3 RC 1 14 2 13 3 12 4 UBA2212 11 5 10 6 9 7 8 FS SGND SENSE SGND CSI CB SW Cosc CSW CB RCSI 001aan371 Fig 7. Application diagram Table 6. Bill of materials Number Reference UBA2212 Objective data sheet Typical value Quantity 1 Rfuse 10 ; 1 W - no value for fuse resistor 1 2 D1, D2, D3, D4 diode, 1 A; 1000 V; 1N4007 4 3 CBUF electrolytic capacitor; 33 F; 250 V; 105 C 1 4 LFILT inductor; 3 mH; 0.5 A 1 5 CDVDT ceramic capacitor; 330 pF; 500 V; 1206 1 6 CFS ceramic capacitor; 22 nF; 50 V; 0805 1 7 CB ceramic capacitor; 220 nF; 50 V; 0805 1 8 CSW ceramic capacitor; 68 nF; 50 V; 0805 1 9 Cosc ceramic capacitor; 220 pF; 50 V; 0805 1 10 CVDD ceramic capacitor; 100 nF; 50 V; 0805 1 11 Rosc chip resistor; 100 k; 5 %; 0805 1 12 C6; C7 film capacitor; 82 nF; 100 V 2 13 C5 film capacitor; 6.8 nF; 1 kV 1 14 C8 film capacitor; 8.2 nF; 400 V 1 15 RCSI chip resistor; 1.8 ; 1 %; 0.25 W 1 16 L2 PC40-EE16; 1.5 mH; 1 A; N = 180 : 6 : 6; diameter 0.23 mm 1 18 U1 UBA2213CT; SO14 1 19 Burner burner; T3 Spiral 20 W 1 All information provided in this document is subject to legal disclaimers. Rev. 1 — 9 December 2011 © NXP B.V. 2011. All rights reserved. 14 of 20 UBA2212 NXP Semiconductors Half-bridge power IC family for CFL lamps 12. Package outline DIP14: plastic dual in-line package; 14 leads (300 mil) SOT27-1 ME seating plane D A2 A A1 L c e Z w M b1 (e 1) b MH 8 14 pin 1 index E 1 7 0 5 10 mm scale DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT A max. A1 min. A2 max. b b1 c D (1) E (1) e e1 L ME MH w Z (1) max. mm 4.2 0.51 3.2 1.73 1.13 0.53 0.38 0.36 0.23 19.50 18.55 6.48 6.20 2.54 7.62 3.60 3.05 8.25 7.80 10.0 8.3 0.254 2.2 inches 0.17 0.02 0.13 0.068 0.044 0.021 0.015 0.014 0.009 0.77 0.73 0.26 0.24 0.1 0.3 0.14 0.12 0.32 0.31 0.39 0.33 0.01 0.087 Note 1. Plastic or metal protrusions of 0.25 mm (0.01 inch) maximum per side are not included. Fig 8. REFERENCES OUTLINE VERSION IEC JEDEC JEITA SOT27-1 050G04 MO-001 SC-501-14 EUROPEAN PROJECTION ISSUE DATE 99-12-27 03-02-13 Package outline SOT27-1 (DIP14) UBA2212 Objective data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 9 December 2011 © NXP B.V. 2011. All rights reserved. 15 of 20 UBA2212 NXP Semiconductors Half-bridge power IC family for CFL lamps SO14: plastic small outline package; 14 leads; body width 3.9 mm SOT108-1 D E A X c y HE v M A Z 8 14 Q A2 A (A 3) A1 pin 1 index θ Lp 1 L 7 e detail X w M bp 0 2.5 5 mm scale DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT A max. A1 A2 A3 bp c D (1) E (1) e HE L Lp Q v w y Z (1) mm 1.75 0.25 0.10 1.45 1.25 0.25 0.49 0.36 0.25 0.19 8.75 8.55 4.0 3.8 1.27 6.2 5.8 1.05 1.0 0.4 0.7 0.6 0.25 0.25 0.1 0.7 0.3 0.01 0.019 0.0100 0.35 0.014 0.0075 0.34 0.16 0.15 0.010 0.057 inches 0.069 0.004 0.049 0.05 0.244 0.039 0.041 0.228 0.016 0.028 0.024 0.01 0.01 0.028 0.004 0.012 θ 8o o 0 Note 1. Plastic or metal protrusions of 0.15 mm (0.006 inch) maximum per side are not included. Fig 9. REFERENCES OUTLINE VERSION IEC JEDEC SOT108-1 076E06 MS-012 JEITA EUROPEAN PROJECTION ISSUE DATE 99-12-27 03-02-19 Package outline SOT108-1 (SO14) UBA2212 Objective data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 9 December 2011 © NXP B.V. 2011. All rights reserved. 16 of 20 UBA2212 NXP Semiconductors Half-bridge power IC family for CFL lamps 13. Revision history Table 7. Revision history Document ID Release date Data sheet status Change notice Supersedes UBA2212 v.1 20111209 Objective data sheet - - UBA2212 Objective data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 9 December 2011 © NXP B.V. 2011. All rights reserved. 17 of 20 UBA2212 NXP Semiconductors Half-bridge power IC family for CFL lamps 14. Legal information 14.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 14.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. 14.3 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. UBA2212 Objective data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 9 December 2011 © NXP B.V. 2011. All rights reserved. 18 of 20 UBA2212 NXP Semiconductors Half-bridge power IC family for CFL lamps Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond 14.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 15. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] UBA2212 Objective data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 9 December 2011 © NXP B.V. 2011. All rights reserved. 19 of 20 UBA2212 NXP Semiconductors Half-bridge power IC family for CFL lamps 16. Contents 1 2 2.1 2.2 2.3 2.4 2.5 2.6 3 4 5 6 6.1 6.2 7 7.1 7.2 7.3 7.4 7.5 7.6 7.7 7.8 7.9 7.10 7.11 7.12 7.13 8 9 10 11 12 13 14 14.1 14.2 14.3 14.4 15 16 General description . . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 System integration . . . . . . . . . . . . . . . . . . . . . . 1 General . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Fast and smooth light out . . . . . . . . . . . . . . . . . 1 Burner lifetime . . . . . . . . . . . . . . . . . . . . . . . . . 1 Safety . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Ease of use. . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Pinning information . . . . . . . . . . . . . . . . . . . . . . 4 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 4 Functional description . . . . . . . . . . . . . . . . . . . 5 Supply voltage . . . . . . . . . . . . . . . . . . . . . . . . . 5 Start-up state . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Reset . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Oscillation control . . . . . . . . . . . . . . . . . . . . . . . 5 Preheat state . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Ignition state . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Boost state and transition to steady state. . . . . 8 Steady state . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Non-overlap time . . . . . . . . . . . . . . . . . . . . . . . 9 OverTemperature Protection (OTP) . . . . . . . . . 9 Minimum glow time control . . . . . . . . . . . . . . . . 9 Saturation Current Protection (SCP) . . . . . . . 10 Capacitive Mode Protection (CMP) . . . . . . . . 10 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . 11 Thermal characteristics . . . . . . . . . . . . . . . . . 11 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . 12 Application information. . . . . . . . . . . . . . . . . . 14 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 15 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 17 Legal information. . . . . . . . . . . . . . . . . . . . . . . 18 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 18 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Contact information. . . . . . . . . . . . . . . . . . . . . 19 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 9 December 2011 Document identifier: UBA2212