UBA2213 Half-bridge power IC family for CFL lamps Rev. 2 — 21 November 2011 Product data sheet 1. General description The UBA2213 family of integrated circuits are a range of high voltage monolithic ICs for driving Compact Fluorescent Lamps (CFL) in half-bridge configurations. The family is designed to provide easy integration of lamp loads across a range of burner power and mains voltages. 2. Features and benefits 2.1 System integration Integrated half-bridge power transistors UBA2213A: 220 V; 13.5 ; 0.9 A maximum ignition current UBA2213B: 220 V; 9 ; 1.35 A maximum ignition current UBA2213C: 220 V; 6.6 ; 1.85 A maximum ignition current Integrated bootstrap diode Integrated high-voltage supply 2.2 General Adjustable current controlled preheat mode enables the preheat time (tph) to be set Glow-time control minimizes electrode damage in non-preheat applications RMS current control 2.3 Fast and smooth light out Boost with externally controlled timing Temperature controlled timing during boost state Smooth transition from boost to burn state 2.4 Burner lifetime Current controlled preheat with adjustable preheat time Minimum glow time control to support cold start Lamp power independent from mains voltage variations Lamp inductor saturation protection during ignition UBA2213 NXP Semiconductors Half-bridge power IC family for CFL lamps 2.5 Safety OverTemperature Protection (OTP) Capacitive Mode Protection (CMP) Saturation Current Protection (SCP) Overpower control System shutdown at burner end of life 2.6 Ease of use Adjustable operating frequency for easy fit with various burners Each device in the family incorporates the same controller functionality ensuring easy power scaling and roll-out across a complete range of CFLs 3. Applications Compact Fluorescent Lamps up to 23 W for indoor and outdoor applications 4. Ordering information Table 1. Ordering information Type number UBA2213AP/N1 Package Name Description Version DIP8 plastic dual in-line package; 8 leads (300 mil) SOT97-1 SO14 plastic small outline package; 14 leads; body width 3.9 mm SOT108-1 UBA2213BP/N1 UBA2213CP/N1 UBA2213AT/N1 UBA2213BT/N1 UBA2213CT/N1 UBA2213 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 21 November 2011 © NXP B.V. 2011. All rights reserved. 2 of 21 UBA2213 NXP Semiconductors Half-bridge power IC family for CFL lamps 5. Block diagram Clamp COUT1 rectified mains VDD startup UBA2213 Llamp LAMP COUT2 CVDD VDD DVDT HV 7(6) n.p. (5) 6(3) CDVDT n.p. (4) VDD 3(11) FS VDD VO(ref)RMS OTP Isat reset HSPT DRIVER LATCH reset SGND HSPT Cbs set 5(14) OUT GLOW AND Isat CONTROL VDD PULSE Rosc VOLTAGE CONTROLLED OSCILLATOR :2 RC 8(7) Cosc SW 1(8) VSW VSW(ph) CSW HS on fosc RSENSE NON-OVERLAP LS on TIMER LSPT DRIVER LSPT 4(12) SENSE preheat/boost burn state RMS control X2 - VO(ref)RMS2 preheat SGND 2(1, 2, 9, 10, 13) VO(ref)RMS boost Vref(ph) Vref(boost) 001aan138 UBA2213XT (SO14) pin numbers are between brackets. n.p. in the diagram means not present in UBA2213XP (DIP8 package). Fig 1. Block diagram In the SO14 package, the two diodes which are required for the DVDT supply are integrated and connected between pins DVDT and PGND. Mount these diodes externally when using the DIP8 packaged devices because the are not bonded. UBA2213 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 21 November 2011 © NXP B.V. 2011. All rights reserved. 3 of 21 UBA2213 NXP Semiconductors Half-bridge power IC family for CFL lamps 6. Pinning information 6.1 Pinning SW 1 SGND 2 8 RC 7 VDD 6 HV 5 OUT UBA2213P FS 3 SENSE 4 SGND 1 14 OUT SGND 2 13 SGND HV 3 12 SENSE PGND 4 DVDT 5 VDD 6 RC 7 UBA2213T 001aan203 Fig 2. 11 FS 10 SGND 9 SGND 8 SW 001aan201 Pin configuration for UBA2213XP (SOT97-1) Fig 3. Pin configuration for UBA2213XT (SOT108-1) 6.2 Pin description Table 2. Symbol Pin description Pin Description UBA2213xP UBA2213xT UBA2213 Product data sheet SW 1 8 sweep timing and VCO input SGND 2 1, 2, 9, 10, 13 signal ground FS 3 11 high-side floating supply output SENSE 4 12 voltage sense for preheat and RMS control OUT 5 14 half-bridge output HV 6 3 high-voltage supply VDD 7 6 internal low-voltage supply output RC 8 7 internal oscillator input DVDT n.p. 5 DVDT supply input PGND n.p. 4 DVDT supply ground All information provided in this document is subject to legal disclaimers. Rev. 2 — 21 November 2011 © NXP B.V. 2011. All rights reserved. 4 of 21 UBA2213 NXP Semiconductors Half-bridge power IC family for CFL lamps 7. Functional description 7.1 Supply voltage The UBA2213 family is powered using a start-up current source and a DVDT supply. When the voltage on pin HV increases, the VDD capacitor (CVDD) is charged using the internal JFET current source. The voltage on pin VDD rises until VDD equals VDD(start). The start-up current source is then disabled. The half-bridge starts switching causing the charge pump to generate the required VDD supply. The amount of current flowing towards VDD equals VI(HV) CDVDT f where f represents the momentary frequency. The charge pump consists of an external half-bridge capacitor (CDVDT). The SO14 package contains two internal diodes with an internal Zener diode. Mount these diodes externally with DIP8 packaged devices. The Zener diode ensures the VDD voltage cannot rise above the maximum VDD rating. The DVDT supply has its own ground pin (PGND) to prevent large peak currents from flowing through the external small signal ground pin (SGND). The start-up current source is enabled when the voltage on pin VDD is below the VDD(stop) level. 7.2 Start-up state When the supply voltage on pin VDD increases, the IC enters the start-up state. In the start-up state, the High-Side Power Transistor (HSPT) is switched off and the Low-Side Power Transistor (LSPT) is switched on. The circuit is reset and the capacitors on the bootstrap pin FS (Cbs) and the low-voltage supply pin VDD (CVDD) are charged. Pins RC and SW are switched to ground. When pin VDD is above VDD(start), the start-up state is exited and the preheat state is entered. If the voltage on pin VDD falls below VDD(stop), the system returns to the start-up state. Remark: If OTP is active, the IC remains in the start-up state indefinitely. The VDD voltage slowly oscillates between VDD = VDD(stop) and VDD = VDD(start). 7.3 Reset A DC reset circuit is incorporated in the high-side driver. The high-side transistor is switched off when the voltage on pin FS is below the high-side lockout voltage. 7.4 Oscillation control The oscillation frequency is based on the 555-timer function. A self oscillating circuit is created comprising the external components: resistors Rosc, RSENSE and capacitor Cosc. Rosc and Cosc define the nominal oscillating frequency. An internal divider 0.5 fosc(int) is used to generate the accurate 50 % duty cycle. The divider sets the bridge frequency at half the oscillator frequency. The input on pin SW generates the signal VSW and it is used to determine the frequency in all states except preheat and boost. Signal VSW(ph) is an internally generated signal used to determine the frequency during the preheat state. UBA2213 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 21 November 2011 © NXP B.V. 2011. All rights reserved. 5 of 21 UBA2213 NXP Semiconductors Half-bridge power IC family for CFL lamps The output voltage of the bridge changes with the falling edge of the signal on pin RC. The nominal half-bridge frequency is shown in Equation 1: 1 f osc nom = ------------------------------------------k osc R osc C osc (1) The maximum frequency is 2.5 fosc(nom) and is set at VSW. An overview of the oscillator, internal LSPT and HSPT drive signals and the output is shown in Figure 4. VRC 0 time (s) HSPT driver time (s) 0 LSPT driver time (s) 0 VOUT half-bridge time (s) 0 001aam035 Fig 4. Oscillator, HSPT/LSPT drivers and output signals 7.5 Preheat state As described in Section 7.2, the IC enters the preheat state when the voltage on pin VDD is above VDD(start) and OTP is not active. The sweep current (ISW) charges the capacitor on pin SW (CSW). The preheat Operational Transconductance Amplifier (OTA) is enabled and the half-bridge circuit starts oscillating. The preheat current is monitored using the external RSENSE resistor. The OTA controls the frequency using output voltage VSW(ph) so that the peak voltage across RSENSE equals the internal reference voltage (Vref(ph)). The peak voltage is the voltage at the end of the LSPT conduction time. The preheat peak current through the lamp filament is calculated as shown in Equation 2: V ref ph I ph peak = -----------------R SENSE (2) The external capacitor (CSW) defines the preheat time. Typically, the external capacitor is calculated as shown in Equation 3.The preheat state ends when the down-going CSW voltage equals VSW(ph); see Figure 4. UBA2213 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 21 November 2011 © NXP B.V. 2011. All rights reserved. 6 of 21 UBA2213 NXP Semiconductors Half-bridge power IC family for CFL lamps t ph C sw = -----------------------------------1.5 s 100 nF (3) If during the preheat time, capacitive mode is sensed, the internal VSW(ph) node is discharged. The frequency sweep increases until the system is set to the operating point where capacitive mode switching is minimized. Vlamp 2.5 × fosc(nom) fosc(int) fosc(nom) fosc(boost) VSW HIGH VSW boostH VSWinter boost ... ... VSW 0.6 × VH(RC) VSW(ph) VSW boostL preheat boost transition RMS ignition 001aan139 Fig 5. Vlamp, fosc(int), VSW, and VSW(ph) plotted against time 7.6 Ignition state The ignition state is entered after the preheat state has finished. The capacitor on pin SW (CSW) is charged by ISW up to 0.6 VH(RC) which corresponds to the frequency fosc(nom). During this frequency sweep, the resonance frequency is reached resulting in the ignition of the lamp (see Figure 4). The lamp inductor (Llamp) and lamp capacitor (Clamp) set resonance frequency. The ignition state ends when the voltage on pin SW (VSW) reaches 0.6 VH(RC). 7.7 Boost state and transition to steady state The boost state is entered after ignition. During boost period, VCO’s input is connected to an internal voltage to get the fix frequency fmin. The UBA2213 can provide a higher current than steady state, the current ratio can be set by external component. Capacitor CSW is charged and discharged using an internal current generated saw-tooth waveform which sets boost time. UBA2213 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 21 November 2011 © NXP B.V. 2011. All rights reserved. 7 of 21 UBA2213 NXP Semiconductors Half-bridge power IC family for CFL lamps When boost state is ended, transition control is turned on. Vph is disconnected to VSW and reset. Capacitor CSW is discharged by internal current, the frequency was increased from fmin to fnom. The transition state ends when the voltage on pin SW (VSW) reaches 0.6 VH(RC). 7.8 Steady state In the steady state, the RMS current control is active. This control sets the frequency so that the RMS voltage across the sense resistor (RSENSE) is equal to VO(ref)RMS. This feature ensures the current through the power switches and through the lamp is constant. This results in constant IC dissipation and temperature at a fixed ambient temperature. During one oscillator clock cycle, the voltage on pin SENSE (VSENSE) is squared and converted into a positive current. This discharge current is added to the capacitor CSW. During the other oscillator clock cycle, the input of the squarer is connected to the internal reference voltage VO(ref)RMS. This voltage is squared and converted into a negative current. This charge current is also added to capacitor CSW. When both currents are equal, then Equation 4 is true: T osc 1 ---------- T osc T osc V 2 SENSE t DT 0 1 = ---------- T osc V (4) 2 O ref RMS DT 0 Where Tosc equals the operating frequency fosc / 1. Taking the square root of both sides results in Equation 5: T osc 1 ---------- T osc T osc V 2 SENSE t DT 0 = 1 ---------- T osc V (5) 2 O ref RMS DT 0 or RMS V SENSE = V O ref RMS = R SENSE I LSPT (6) The internal reference voltage (VO(ref)RMS) and the external RSENSE resistor define the constant current which flows through the power switches and the lamp. 7.9 Non-overlap time The non-overlap time is defined as the time when both MOSFETs are not conducting. The non-overlap time is fixed internally and is fixed at the tno value (see Table 5). 7.10 OverTemperature Protection (OTP) OTP is active in all states except boost. When the die temperature reaches the OTP activation threshold (Tth(act)otp), the oscillator is stopped and the power switches (LSPT/HSPT) are set to the start-up state. When the oscillator is stopped, the DVDT supply no longer generates the supply current IDVDT. Voltage VDD gradually decreases and the start-up state is entered as described in Section 7.2 on page 5. OTP is reset when the temperature < Tth(rel)otp. UBA2213 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 21 November 2011 © NXP B.V. 2011. All rights reserved. 8 of 21 UBA2213 NXP Semiconductors Half-bridge power IC family for CFL lamps During boost state, the threshold of temperature is Tj(end)bst which is lower than Tth(otp). When the die temperature has reached Tj(end)bst, the boost state ends, the IC enters steady state and OTP is enabled. 7.11 Minimum glow time control If the preheat time is set too short or omitted, the lamp electrodes do not have the correct temperature in the ignition state. This results in instant light but also in a reduced switching lifetime because when the electrode temperature is too low electrode sputtering and damage occur. The minimum glow time control limits electrode damage by ensuring maximum power use during the glow phase to heat the electrodes quickly (see Figure 6). Vlamp 2.5 × fosc(nom) fosc(int) fosc(nom) fosc(boost) VSW HIGH VSW boostH VSWinter boost ... ... VSW 0.6 × VH(RC) VSW boostL VSW(ph) preheat boost glow ignition Fig 6. transition RMS 001aan140 Vlamp, fosc(int), VSW, and VSW(ph) plotted against time Remark: The glow time control is active as tph is too short to preheat the electrodes. 7.12 Saturation Current Protection (SCP) A critical parameter in the design of the lamp inductor is its saturation current. When the momentary inductor exceeds its saturation current, the inductance drops significantly. If the inductance drops significantly, the inductor current and the current flowing through the LSPT and HSPT power switches increases rapidly. This action can cause the current to exceed the half-bridge power transistors maximum ratings. Saturation of the lamp inductor is likely to occur in cost-effective and miniaturized CFLs. The UBA2213 family internally monitors the power transistor current. When this current exceeds the momentary rating of the internal power transistors, the conduction time is reduced and the frequency is slowly increased (by discharging CSW). This function causes the system to balance at the edge of the current rating of the power switches. UBA2213 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 21 November 2011 © NXP B.V. 2011. All rights reserved. 9 of 21 UBA2213 NXP Semiconductors Half-bridge power IC family for CFL lamps 7.13 Capacitive Mode Protection (CMP) When capacitive mode is detected, capacitor CSW is discharged causing the frequency to increase. The system sets itself to the operating point where capacitive mode switching is minimized. CMP is active during the ignition state and in the steady state. If capacitive mode is sensed during preheat and boost state, the oscillator frequency increases step-by-step by discharging the internal capacitor. This action continues until the system is set to the operating point where capacitive mode switching is minimized. CMP can be triggered for example, by an end of a lamp life condition when a lamp electrode is broken. 8. Limiting values Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter voltage on pin HV VHV Conditions Min Max Unit operating - 373 V mains transients: 10 minutes maximum over lifetime - 550 V VFS voltage on pin FS with respect to pin OUT 0 14 V VDD supply voltage DC supply 0 15 V VSENSE voltage on pin SENSE 5 +5 V VRC voltage on pin RC IRC < 1 mA 0 VDD V VSW voltage on pin SW ISW < 1 mA 0 VDD V current on pin OUT Tj < 125 C UBA2213AX 0.9 +0.9 A UBA2213BX 1.35 +1.35 A UBA2213CX 1.65 +1.65 A IOUT [1] IDVDT current on pin DVDT Tj < 125 C 0.9 +0.9 A SR slew rate repetitive output on pin OUT 4 +4 V/ns Tj junction temperature 40 +150 C Tstg storage temperature 55 +150 C - 1 kV - 2.5 kV - 200 V - 500 V VESD electrostatic discharge voltage HBM: [2] pins HV, FS, OUT pins SW, RC, VDD, DVDT MM: [3] all pins CDM: all pins UBA2213 Product data sheet [3] [1] X where the last letter is P or T. [2] In accordance with the Human Body Model (HBM): equivalent to discharging a 100 pF capacitor through a 1.5 k series resistor. [3] In accordance with the Machine Model (MM): equivalent to discharging a 200 pF capacitor through a 1.5 k series resistor and a 0.75 H inductor. All information provided in this document is subject to legal disclaimers. Rev. 2 — 21 November 2011 © NXP B.V. 2011. All rights reserved. 10 of 21 UBA2213 NXP Semiconductors Half-bridge power IC family for CFL lamps 9. Thermal characteristics Table 4. Thermal characteristics Symbol Rth(j-a) Rth(j-c) [1] Parameter thermal resistance from junction to ambient thermal resistance from junction to case Conditions Typ Unit in free air [1] 95 K/W in free air [1] 16 K/W In accordance with IEC 60747-1 10. Characteristics Table 5. Characteristics Tj = 25 C; all voltages are measured with respect to SGND; positive currents flow into the IC. Symbol Parameter Conditions Min Typ Max Unit Low-voltage supply Start-up state II(HV) input current on pin HV VI(HV) = 100 V - 0.85 - mA VDD(start) start supply voltage oscillation start 10.7 11.7 12.7 V VDD(stop) stop supply voltage oscillation stop 8 8.5 9 V VDD(hys) hysteresis of supply voltage start stop VDD(reg) regulation supply voltage Isink sink current capability of VDD regulator on-state resistance high-side transistor: 3 3.5 4 V - 13.8 - V 6 - - mA UBA2213AX; VI(HV) = 310 V; ID = 100 mA - 13.5 - UBA2213BX; VI(HV) = 310 V; ID = 100 mA - 9.3 - UBA2213CX; VI(HV) = 310 V; ID = 100 mA - 6.6 - Output stage Ron low-side transistor: Ron(150)/Ron(25) on-state resistance ratio (150 C to 25 C) VF forward voltage [1] [1] UBA2213AX; ID = 100 mA - 13.5 - UBA2213BX; ID = 100 mA - 8.2 - UBA2213CX; ID = 100 mA - 6.6 - - 1.4 - HS; IF = 200 mA - - 2.0 V LS; IF = 200 mA - - 2.0 V bootstrap diode; IF = 1 mA 0.7 1.0 1.3 V tno non-overlap time 1.05 1.35 1.65 s VI(FS) input voltage on pin FS UnderVoltage LockOut with respect to pin OUT 3.6 4.2 4.8 V II(FS) input current on pin FS VI(HV) = 310 V; VI(FS) = 12 V 10 14 18 A UBA2213 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 21 November 2011 © NXP B.V. 2011. All rights reserved. 11 of 21 UBA2213 NXP Semiconductors Half-bridge power IC family for CFL lamps Table 5. Characteristics …continued Tj = 25 C; all voltages are measured with respect to SGND; positive currents flow into the IC. Symbol Isat Parameter Conditions saturation current Min Typ Max Unit UBA2213AX; VDS = 30 V; Tj 125 C; VI(HV) = 310 V 0.90 - - A UBA2213BX; VDS = 30 V; Tj 125 C; VI(HV) = 310 V 1.35 - - A UBA2213CX; VDS = 30 V; Tj 125 C; VI(HV) = 310 V 1.85 - - A UBA2213AX; VDS = 30 V; Tj 125 C 0.90 - - A UBA2213BX; VDS = 30 V; Tj 125 C 1.35 - - A UBA2213CX; VDS = 30 V; Tj 125 C 1.85 - - A VSW = VDD; steady state - - 60 kHz high-side transistor: low-side transistor: [1] [1] Internal oscillator fosc(int) internal oscillator frequency fosc(nom) nominal oscillator frequency Rosc = 100 k; Cosc = 220 pF; VSW = VDD 40.05 41.32 42.68 kHz fosc(nom)/T nominal oscillator frequency Rosc = 100 k; Cosc = 220 pF; variation with temperature T = 20 to +150 C - 2 kH high-level trip point factor 0.371 0.384 0.397 kL low-level trip point factor 0.028 0.032 0.036 VH(RC) HIGH-level voltage on pin RC trip point; VH(RC) = kH VDD 4.08 4.22 VL(RC) LOW-level voltage on pin RC trip point; VL(RC) = kL VDD 0.308 0.352 0.396 V Kosc oscillator constant Rosc = 100 k; Cosc = 220 pF 1.065 1.1 1.135 - 620 - mV - 4.37 % V Preheat function Vref(ph) preheat reference voltage tph preheat time CSW = 100 nF - 1.2 - s CSW = 68 nF - 0.8 - s Rosc = 100 k; Cosc = 220 pF; VSW= VDD - 26 - kHz - 85 - C Boost function fbst boost frequency Tj(end)bst boost end junction temperature tbst boost time CSW = 68 nF - 51 - s tt transition time CSW = 68 nF - 0.7 - s 262 285 308 mV RMS current control function VO(ref)RMS UBA2213 Product data sheet RMS reference output voltage All information provided in this document is subject to legal disclaimers. Rev. 2 — 21 November 2011 © NXP B.V. 2011. All rights reserved. 12 of 21 UBA2213 NXP Semiconductors Half-bridge power IC family for CFL lamps Table 5. Characteristics …continued Tj = 25 C; all voltages are measured with respect to SGND; positive currents flow into the IC. Symbol Parameter Conditions Min Typ Max Unit OTP function Tth(act)otp overtemperature protection activation threshold temperature 155 175 - C Tth(rel)otp overtemperature protection release threshold temperature - 100 - C [1] X where the last letter is P or T. UBA2213 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 21 November 2011 © NXP B.V. 2011. All rights reserved. 13 of 21 UBA2213 NXP Semiconductors Half-bridge power IC family for CFL lamps 11. Application information LFILT D1 COUT1 D4 Llamp LAMP Clamp SGND L_N HV PGND CBUF AC input DVDT Rfuse L_L VDD Rosc D2 CVDD COUT2 D3 CDVDT U1 SGND RC 1 14 2 13 3 12 4 UBA2213 11 5 10 6 9 7 8 OUT SGND CFS SENSE FS SGND SGND RSENSE SW CSW Cosc aaa-001490 Fig 7. Application diagram for the SO14 devices The components used in Figure 7 are illustrated in Table 6. Table 6. SO14 device bill of materials Number Reference 1 2 3 CBUF 4 Alias Typical value Quantity Rfuse 10 ; 1 W 1 D1, D2, D4, D5 M7 4 C1 2.7 F; 400 V; 105 C; 10*16 1 CFS C5 10 nF; 50 V; 0805 1 5 CSW, CVDD C6 100 nF; 50 V; 0805 2 6 CDVDT C9 220 pF; 500 V 1 7 Cosc C7 220 pF; 50 V; 0805 1 9 C0, COUT1, COUT2 C0, C2, C3 100 nF; 400 V; CL21 3 10 Clamp C4 2.2 nF; 1 kV; CBB28 1 11 LFILT L1 3 mH; LGB 1 12 Llamp L2 3 mH; EE13; PC40 1 13 Rosc R1 100 k; 1 %; 0805 1 14 RSENSE R2 1.8 ; 1 W; 1 % 1 15 PCB UBA2213-1; UBA2213-8 2 16 IC UBA2213B 1 17 Burner 3U-12 W; 2700k 1 Remark: The customized component values depend on the burner characteristics. An on-line tool is available to calculate the required components values. This on-line tool can be found on the product information page of the UBA2213. UBA2213 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 21 November 2011 © NXP B.V. 2011. All rights reserved. 14 of 21 UBA2213 NXP Semiconductors Half-bridge power IC family for CFL lamps U1 LFILT D1 HV COUT1 D3 6 7 VDD D5a CVDD Rosc FS Rfuse 3 8 Cosc RC UBA2213 L_L CFS Llamp CBUF AC input 5 LAMP L_N SENSE D2 D4 D5b RSW SW CDVDT Clamp COUT2 1 CSW 4 2 SGND RSENSE aaa-001491 Fig 8. Application diagram for DIP8 devices The components used in Figure 8 are illustrated in Table 7. Table 7. DIP8 device bill of materials Number Reference Alias Typical value Quantity 1 Rfuse - 22 ; 1 W 1 2 D1, D2, D4, D5 - M7 4 2 D5a, D5b - 1N4148 2 3 CBUF C1 2.7 F; 400 V; 105 C; 10*16 1 4 CFS C5 10 nF; 50 V; 0805 1 5 CSW, CVDD C6 100 nF; 50 V; 0805 2 6 CDVDT C9 220 pF; 630 V 1 7 Cosc C7 220 pF; 50 V; 0805 1 9 COUT1, COUT2 C0, C2, C3 100 nF; 400 V; CL21 3 10 Clamp C4 2.2 nF; 1 kV; CBB28 1 11 LFILT L1 3 mH; LGB 1 12 Llamp L2 3 mH; EE13; PC40 1 13 Rosc R1 100 k; 1 %; 0805 1 14 RSENSE R2 1.8 ; 1 W; 1 % 1 15 RSW RSW not mounted 2 16 IC - UBA2213BP 1 17 Burner - 3U-12 W; 2700k 1 Remark: The customized component values depend on the burner characteristics. An on-line tool is available to calculate the required components values. This on-line tool can be found on the product information page of the UBA2213. UBA2213 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 21 November 2011 © NXP B.V. 2011. All rights reserved. 15 of 21 UBA2213 NXP Semiconductors Half-bridge power IC family for CFL lamps 12. Package outline DIP8: plastic dual in-line package; 8 leads (300 mil) SOT97-1 ME seating plane D A2 A A1 L c Z w M b1 e (e 1) b MH b2 5 8 pin 1 index E 1 4 0 5 10 mm scale DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT A max. A1 min. A2 max. b b1 b2 c D (1) E (1) e e1 L ME MH w Z (1) max. mm 4.2 0.51 3.2 1.73 1.14 0.53 0.38 1.07 0.89 0.36 0.23 9.8 9.2 6.48 6.20 2.54 7.62 3.60 3.05 8.25 7.80 10.0 8.3 0.254 1.15 inches 0.17 0.02 0.13 0.068 0.045 0.021 0.015 0.042 0.035 0.014 0.009 0.39 0.36 0.26 0.24 0.1 0.3 0.14 0.12 0.32 0.31 0.39 0.33 0.01 0.045 Note 1. Plastic or metal protrusions of 0.25 mm (0.01 inch) maximum per side are not included. Fig 9. REFERENCES OUTLINE VERSION IEC JEDEC JEITA SOT97-1 050G01 MO-001 SC-504-8 EUROPEAN PROJECTION ISSUE DATE 99-12-27 03-02-13 Package outline SOT97-1 (DIP8) UBA2213 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 21 November 2011 © NXP B.V. 2011. All rights reserved. 16 of 21 UBA2213 NXP Semiconductors Half-bridge power IC family for CFL lamps SO14: plastic small outline package; 14 leads; body width 3.9 mm SOT108-1 D E A X c y HE v M A Z 8 14 Q A2 A (A 3) A1 pin 1 index θ Lp 1 L 7 e detail X w M bp 0 2.5 5 mm scale DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT A max. A1 A2 A3 bp c D (1) E (1) e HE L Lp Q v w y Z (1) mm 1.75 0.25 0.10 1.45 1.25 0.25 0.49 0.36 0.25 0.19 8.75 8.55 4.0 3.8 1.27 6.2 5.8 1.05 1.0 0.4 0.7 0.6 0.25 0.25 0.1 0.7 0.3 0.01 0.019 0.0100 0.35 0.014 0.0075 0.34 0.16 0.15 0.010 0.057 inches 0.069 0.004 0.049 0.05 0.244 0.039 0.041 0.228 0.016 0.028 0.024 0.01 0.01 0.028 0.004 0.012 θ 8o o 0 Note 1. Plastic or metal protrusions of 0.15 mm (0.006 inch) maximum per side are not included. REFERENCES OUTLINE VERSION IEC JEDEC SOT108-1 076E06 MS-012 JEITA EUROPEAN PROJECTION ISSUE DATE 99-12-27 03-02-19 Fig 10. Package outline SOT108-1 (SO14) UBA2213 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 21 November 2011 © NXP B.V. 2011. All rights reserved. 17 of 21 UBA2213 NXP Semiconductors Half-bridge power IC family for CFL lamps 13. Revision history Table 8. Revision history Document ID Release date Data sheet status Change notice Supersedes UBA2213 v.2 20111121 Product data sheet - UBA2213 v.1 UBA2213 v.1 20101202 Objective data sheet - - UBA2213 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 21 November 2011 © NXP B.V. 2011. All rights reserved. 18 of 21 UBA2213 NXP Semiconductors Half-bridge power IC family for CFL lamps 14. Legal information 14.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 14.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. 14.3 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. UBA2213 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 21 November 2011 © NXP B.V. 2011. All rights reserved. 19 of 21 UBA2213 NXP Semiconductors Half-bridge power IC family for CFL lamps Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond 14.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 15. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] UBA2213 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 21 November 2011 © NXP B.V. 2011. All rights reserved. 20 of 21 UBA2213 NXP Semiconductors Half-bridge power IC family for CFL lamps 16. Contents 1 2 2.1 2.2 2.3 2.4 2.5 2.6 3 4 5 6 6.1 6.2 7 7.1 7.2 7.3 7.4 7.5 7.6 7.7 7.8 7.9 7.10 7.11 7.12 7.13 8 9 10 11 12 13 14 14.1 14.2 14.3 14.4 15 16 General description . . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 System integration . . . . . . . . . . . . . . . . . . . . . . 1 General . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Fast and smooth light out . . . . . . . . . . . . . . . . . 1 Burner lifetime . . . . . . . . . . . . . . . . . . . . . . . . . 1 Safety . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Ease of use. . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Pinning information . . . . . . . . . . . . . . . . . . . . . . 4 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 4 Functional description . . . . . . . . . . . . . . . . . . . 5 Supply voltage . . . . . . . . . . . . . . . . . . . . . . . . . 5 Start-up state . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Reset . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Oscillation control . . . . . . . . . . . . . . . . . . . . . . . 5 Preheat state . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Ignition state . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Boost state and transition to steady state. . . . . 7 Steady state . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Non-overlap time . . . . . . . . . . . . . . . . . . . . . . . 8 OverTemperature Protection (OTP) . . . . . . . . . 8 Minimum glow time control . . . . . . . . . . . . . . . . 9 Saturation Current Protection (SCP) . . . . . . . . 9 Capacitive Mode Protection (CMP) . . . . . . . . 10 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . 10 Thermal characteristics . . . . . . . . . . . . . . . . . 11 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . 11 Application information. . . . . . . . . . . . . . . . . . 14 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 16 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 18 Legal information. . . . . . . . . . . . . . . . . . . . . . . 19 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 19 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Contact information. . . . . . . . . . . . . . . . . . . . . 20 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 21 November 2011 Document identifier: UBA2213