High Power GaAs SPDT Switch DC - 2.5 GHz SW-277 V3.00 Features • • • • • • • SO-8 PIN 8 Positive Supply and Control Voltages +36 dBm Typ. 1 dB Compression Point, 8V Supply +65 dBm Typ. 3rd Order Intercept Point, 8V Supply Low Insertion Loss: 0.4 dB Typical Low Power Consumption: 100 µW Fast Switching Speed Tape and Reel Packaging Available1 .1497-.1574 (3.80-4.00) -B- Orientation mark PIN 1 .1890-.1968 (4.80-5.00) -A- .0532-.0688 (1.35-1.75) 0°-8° -C- .004 (0.10) .0040-.0098 (0.10-0.25) Description The SW-277 is fabricated with a monolithic GaAs MMIC using a mature 1-micron process. The process features full chip passivation for increased performance and reliability. .016-.050 (0.40-1.27) .0075-0.0098 (0.19-0.25) 8- Lead SOP outline dimensions Narrow body .150 (All dimensions per JEDEC No. MS-012-AA, Issue C) Dimensions in ( ) are in mm. Unless Otherwise Noted: .xxx = ± 0.010 (.xx = ± 0.25) .xx = ± 0.02 (.x = ±0.5) Ordering Information Model Number SW-277 PIN SW-277TR SW-277RTR Test Conditions2 Insertion Loss 10% to 90% RF, 90% to 10% RF 50% Control to 90% RF, 50% Control to 10% RF In Band Input Power (5V Supply/Control) Input Power (8V Supply/Control) Measured Relative (5V Supply/Control) to Input Power (8V Supply/Control) (for two-tone input power up to +10 dBm) Package SOIC 8-Lead Plastic Package Forward Tape and Reel Reverse Tape and Reel Unit DC – 2.0 GHz DC – 1.0 GHz DC – 0.5 GHz DC – 0.1 GHz DC – 2.0 GHz DC – 1.0 GHz DC – 0.5 GHz DC – 0.1 GHz DC – 2.0 GHz Isolation VSWR Trise, Tfall Ton, Toff Transients One dB Compression Point 3rd Order Intercept .0099-0.0196 x 45° Chamfer (0.25-0.50) .010(0.25) M C A M B S Electrical Specifications, TA = +25°C Parameter .013-.020 TYP. (0.33-0.51) .050(1.27) BSC. M/A-COM’s SW-277 is a GaAs MMIC SPDT switch in a low cost SOIC 8-lead surface mount plastic package. The SW-277 is ideally suited for use where very low power consumption is required. Typical applications include transmit/receive switching, switch matrices, and filter banks in systems such as: radio and cellular equipment, PCM, GPS, fiber optic modules, and other battery powered radio equipment. .2284-.2440 (5.80-6.20) .010(0.25) M B M 0.9 GHz 0.9 GHz 0.9 GHz 0.9 GHz dB dB dB dB dB dB dB dB Min. 14 28 35 35 nS nS mV dBm dBm dBm dBm Typ. Max 0.6 0.4 0.35 0.2 16 32 38 38 1.2:1 30 35 12 33 35.8 61 65 0.8 0.6 0.5 0.4 1. Refer to “Tape and Reel Packaging” Section, or contact factory. 2. All specifications apply when operated with bias voltages of 0V for Vin Low and 5 to 10V for Vin Hi, and 50 Ohm impedance at all RF ports, unless otherwise specified. High power (greater than 1W) handling specifications apply to cold switches only. For input powers under 1W, hot switching can be used. The high control voltage must be within +/- 0.2V of the supply voltage. The RF ports must be blocked outside of the package from ground or any other voltage. Specifications Subject to Change Without Notice. M/A-COM, Inc. North America: 1 Tel. (800) 366-2266 Fax (800) 618-8883 ■ Asia/Pacific: Tel. +81 3 3263 8761 Fax +81 3 3263 8769 ■ Europe: Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020 High Power GaAs SPDT Switch SW-277 V3.00 Absolute Maximum Ratings Parameter Two Tone IP3 Measurements Absolute Maximum Max. Input Power 0.5 – 2.0 GHz 5V Control and Supply 8V Control and Supply 10V Control and Supply Power Dissipation Supply Voltage Control Voltage Operating Temperature Storage Temperature Supply & Control Voltage Input Power (dBm) 3rd Order Intermodulation Products (dBc) 0,5V +27 0,6V +27 0,7V +37 dBm +40 dBm +42 dBm 1.0 W -1V, +12V -1V, Vsupply + 0.2V -40°C to +85°C -65°C to +150°C Pin Configuration Pin No. Description 1 GND, Thermal Contact 2 +V Supply 31 RF Common 4 GND, Thermal Contact 51 RF1 6 A 7 B 81 RF2 8 B 7 A 6 -32 +43 -74 -45 +49.5 -77 +27 -58 +56 -79 -79 0,8V +27 -72 +63 +27 -72 +63 -81 0,5V +28 -30 +43 -69 0,6V +28 -40 +48 -76 0,7V +28 -53 +54.5 -78 0,8V +28 -64 +60 -79 0,10V +28 -72 +64 -80 0,5V +29 -28 +43 -59 0,6V +29 -37 +47.5 -74 0,7V +29 -49 +53.5 -75 0,8V +29 -50 +54 -75 0,10V +29 -50 +54 -75 0,5V +30 -36 +43 -67 0,6V +30 -46 +48 -73 0,7V +30 -50 +53 -75 0,8V +30 -50 +55 -75 0,10V +30 -50 +55 -75 Functional Schematic RF2 Second Harmonic (dBc) 0,10V Thermal Resistance2: θjc = 87 °C/W 1. Operation of this device above any one of these parameters may cause permanent damage. 2. Thermal resistance is given for TA = 25°C. TCASE is the temperature of leads 1 and 4. IP3 (dBm) RF1 5 Truth Table Control Inputs 1 1. External DC blocking capacitors required on all RF ports. 2 GND +V Thermal Contact 3 A 1 0 4 RFC GND Thermal Contact Condition of Switch RF Common to Each RF Port B 0 1 RF1 Off On RF2 On Off "0" – 0 to +0.2V @ 20 µA max. "1" – +5V @ 20 µA Typ to 10V @ 500 µA max. Typical Performance ISOLATION vs. FREQUENCY ISOLATION VS FREQUENCY INSERTION LOSSLOSS vs. FREQUENCY INSERTION VS FREQUENCY 80 2.0 60 1.5 50 LOSS (dB) ISOLATION (dB) 70 40 30 20 1.0 +25°C +85°C 0.5 10 -40°C 0 0 0.5 1.5 1.0 FREQUENCY (GHz) 2.0 0 2.5 1.5 1.0 2.5 2.0 FREQUENCY (GHz) COMPRESSION vs. CONTROL VOLTAGE (900 MHz) COMPRESSION VS CONTROL VOLTAGE 0 VSWR vs.VS FREQUENCY VSWR FREQUENCY 2.0 (900MHz) COMPRESSION (dBm) 40 1.8 VSWR 0.5 1.6 1.4 1.2 1.0 0 0.5 1.5 1.0 FREQUENCY (GHz) 2.0 35 1.0 dB Compression 30 0.1 dB Compression 25 20 15 10 3.0 4.0 6.0 7.0 5.0 8.0 CONTROL VOLTAGE (Volts) 9.0 10.0 Specifications Subject to Change Without Notice. M/A-COM, Inc. 2 North America: Tel. (800) 366-2266 Fax (800) 618-8883 ■ Asia/Pacific: Tel. +81 3 3263 8761 Fax +81 3 3263 8769 ■ Europe: Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020