1N4151W-V Vishay Semiconductors Small Signal Fast Switching Diode Features • Silicon Epitaxial Planar Diode • Fast switching diode e3 • This diode is also available in other case styles including the DO-35 case with the type designation 1N4151, and the MiniMELF case with the type designation LL4151. • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 17431 Mechanical Data Case: SOD-123 Plastic case Weight: approx. 9.3 mg Packaging Codes/Options: GS18 / 10 k per 13" reel (8 mm tape), 10 k/box GS08 / 3 k per 7" reel (8 mm tape), 15 k/box Parts Table Part 1N4151W-V Ordering code Marking 1N4151W-V-GS18 or 1N4151W-V-GS08 Remarks A5 Tape and Reel Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Test condition Reverse voltage Peak reverse voltage Symbol Value Unit VR 50 V VRM 75 V Tamb = 25 °C and f ≥ 50 Hz IF(AV) Surge current t < 1 s and Tj = 25 °C IFSM Power dissipation Tamb = 25 °C Ptot Average rectified current half wave rectification with resistive load 1)Valid 150 1) 500 410 1) mA mA mW provided that electrodes are kept at ambient temperature. Document Number 85721 Rev. 1.2, 06-Apr-05 www.vishay.com 1 1N4151W-V Vishay Semiconductors Thermal Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition Symbol Value Unit RthJA 4501) °C/W Thermal resistance junction to ambient air Junction temperature Tj 150 °C Storage temperature range TS - 65 to 150 °C 1) Valid provided that electrodes are kept at ambient temperature. Electrical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition Symbol Min Typ. Max Unit Forward voltage IF = 50 mA VF 1.0 V Leakage current VR = 50 V IR 50 nA VR = 20 V, Tj = 150 °C IR 50 µA 2 pF Reverse breakdown voltage IR = 5 µA (pulsed) Capacitance VF = VR = 0 V Reverse recovery time IF = 10 mA to IR = 10 mA to IR = 1 mA trr 4 ns IF = 10 mA to IR = 1 mA, VR = 6 V, RL = 100 Ω trr 2 ns f = 100 MHz, VRF = 2 V ην 0.45 2 nF 5 kΩ Rectification efficiency V(BR)R 75 V Rectification Efficiency Measurement Circuit 60 Ω VRF = 2 V VO 17436 www.vishay.com 2 Document Number 85721 Rev. 1.2, 06-Apr-05 1N4151W-V Vishay Semiconductors Typical Characteristics (Tamb = 25 °C unless otherwise specified) Ctot - Relative Capacitance ( pF ) I F - Forward Current ( mA ) 1000 T j = 100 ° C 100 10 25 ° C 1 0.1 T j = 25 ° C f = 1 MHz 1.1 1.0 0.9 0.8 0.7 0.01 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 10000 6 8 10 10000 T j = 25 ° C f = 1 kHz 1000 100 10 1 0.01 18662 1000 100 10 VR = 50 V 1 0.1 1 10 IF - Forward Current ( mA ) 100 Figure 2. Dynamic Forward Resistance vs. Forward Current Ptot - Admissible Power Dissipation ( mW ) 4 Figure 4. Relative Capacitance vs. Reverse Voltage I R - Leakage Current ( nA ) rf - Dynamic Forward Resistance ( Ω ) Figure 1. Forward Current vs. Forward Voltage 2 VR - Reverse Voltage ( V ) 18664 V F - Forward Voltage ( V ) 18742 18744 0 20 40 60 80 100 120 140 160 180 200 Tj - Junction Temperature ( ° C ) Figure 5. Leakage Current vs. Junction Temperature 1000 800 600 400 200 0 0 20 40 60 80 100 120 140 160180 200 18743 Tamb - Ambient Temperature ( °C ) Figure 3. Admissible Power Dissipation vs. Ambient Temperature Document Number 85721 Rev. 1.2, 06-Apr-05 www.vishay.com 3 1N4151W-V Vishay Semiconductors 100 Peak Forward Current ( A ) I FRM - Admissible Repetitive I 10 ν= 0 tp 0.1 T = 1/f p I FRM t T 0.2 1 10 -5 18709 ν = t p /T 0.5 10 -4 10 -3 10 -2 10 -1 1 10 tp - Pulse Length ( s ) Figure 6. Admissible Repetitive Peak Forward Current vs. Pulse Duration Package Dimensions in mm (Inches) 1.35 (0.053) max. 0.25 (0.010) min. 0.1 (0.004) max. 0.55 (0.022) 0.15 (0.006) max. Mounting Pad Layout Cathode Band 2.40 (0.094) 2.55 (0.100) 2.85 (0.112) 3.55 (0.140) 3.85 (0.152) ISO Method E 1.40 (0.055) 1.70 (0.067) 0.72 (0.028) 17432 1.40 (0.055) www.vishay.com 4 Document Number 85721 Rev. 1.2, 06-Apr-05 1N4151W-V Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Document Number 85721 Rev. 1.2, 06-Apr-05 www.vishay.com 5 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1