IMBD4148-V Vishay Semiconductors Small Signal Switching Diode Features • Silicon Epitaxial Planar Diodes • Fast switching diode in case SOT-23, e3 especially suited for automatic insertion. • This diodes are also available in other case styles including: the DO-35 case with the type designation 1N4148, the Mini-MELF case with the type designation LL4148, and the SOD123 case with the type designation 1N4148W-V. • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 3 1 2 16923 Mechanical Data Case: SOT-23 Plastic case Weight: approx. 8.8 mg Packaging Codes/Options: GS18 / 10 k per 13" reel (8 mm tape), 10 k/box GS08 / 3 k per 7" reel (8 mm tape), 15 k/box Parts Table Part IMBD4148-V Ordering code Marking IMBD4148-V-GS18 or IMBD4148-V-GS08 Remarks A2 Tape and Reel Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Test condition Reverse voltage Peak reverse voltage Symbol Value Unit VR 75 V VRM 100 V Rectified current (average) half wave rectification with resist. Tamb = 25 °C, ≥ f ≥ 50 Hz IF(AV) Surge forward current t < 1 s, Tj = 25 °C IFSM Power dissipation up to Tamb = 25 °C Ptot 1) 150 1) 500 350 1) mA mA mW Device on fiberglass substrate, see layout (SOT-23). Thermal Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition Thermal resistance junction to ambient air Symbol Value Unit RthJA 4501) °C/W Junction temperature Tj 150 °C Storage temperature range TS - 65 to + 150 °C 1) Device on fiberglass substrate, see layout (SOT-23). Document Number 85731 Rev. 1.4, 07-Apr-05 www.vishay.com 1 IMBD4148-V Vishay Semiconductors Electrical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition Symbol Min Typ. Max Unit Forward voltage IF = 10 mA VF 1.0 V Leakage current VR = 70 V IR 2.5 µA VR = 70 V, Tj = 150 °C IR 50 µA VR = 25 V, Tj = 150 °C IR 30 µA Ctot 4 pF trr 4 ns Diode capacitance VF = VR = 0 Reverse recovery time (see figures) IF = 10 mA, IR = 10 mA, VR = 6 V, RL = 100 Ω Layout for RthJA test Thickness: Fiberglass 1.5 mm (0.059 in.) Copper leads 0.3 mm (0.012 in.) 7.5 (0.3) 3 (0.12) 1 (0.4) 2 (0.8) 1 (0.4) 12 (0.47) 15 (0.59) 2 (0.8) 0.8 (0.03) 5 (0.2) 1.5 (0.06) 5.1 (0.2) 17451 I F - Forward Current ( mA ) 1000 T j = 100 ° C 100 10 25 ° C 1 0.1 0.01 rf - Dynamic Forward Resistance ( Ω ) Typical Characteristics (Tamb = 25 °C unless otherwise specified) 10000 T j = 25 ° C f = 1 kHz 1000 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 18661 VF - Forward Voltage ( V ) Figure 1. Forward Current vs. Forward Voltage www.vishay.com 2 18662 10 1 0.01 0.1 1 10 IF - Forward Current ( mA ) 100 Figure 2. Dynamic Forward Resistance vs. Forward Current Document Number 85731 Rev. 1.4, 07-Apr-05 IMBD4148-V 10000 500 I R - Leakage Current ( nA ) Ptot - Admissible Power Dissipation ( mW ) Vishay Semiconductors 400 300 200 100 0 0 10 VR = 20 V 1 18665 Figure 3. Admissible Power Dissipation vs. Ambient Temperature Ctot - Relative Capacitance ( pF ) 100 20 40 60 80 100 120 140 160180 200 Tamb - Ambient Temperature ( °C ) 18663 1000 0 20 40 60 80 100 120 140 160 180 200 Tj - Junction Temperature ( ° C ) Figure 5. Leakage Current vs. Junction Temperature T j = 25 ° C f = 1 MHz 1.1 1.0 0.9 0.8 0.7 0 2 4 6 8 10 VR - Reverse Voltage ( V ) 18664 Figure 4. Relative Capacitance vs. Reverse Voltage 100 Peak Forward Current ( A ) I FRM - Admissible Repetitive I 18666 10 ν= 0 ν = t p /T tp T = 1/f p I FRM t T 0.1 0.2 1 0.5 0.1 10 -5 10 -4 10 -3 10 -2 10 -1 1 10 tp - Pulse Length ( s ) Figure 6. Admissible Repetitive Peak Forward Current vs. Pulse Duration Document Number 85731 Rev. 1.4, 07-Apr-05 www.vishay.com 3 IMBD4148-V Vishay Semiconductors 0.175 (.007) 0.098 (.005) 0.1 (.004) max. 0.4 (.016) 0.95 (.037) 1.15 (.045) Package Dimensions in mm (Inches) 2.6 (.102) 2.35 (.092) 0.4 (.016) ISO Method E 3.1 (.122) Mounting Pad Layout 2.8 (.110) 0.52 (0.020) 0.4 (.016) 3 1 0.95 (.037) 1.20(.047) 1.43 (.056) 0.9 (0.035) 2.0 (0.079) 2 0.95 (.037) 0.95 (0.037) 0.95 (0.037) 17418 www.vishay.com 4 Document Number 85731 Rev. 1.4, 07-Apr-05 IMBD4148-V Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Document Number 85731 Rev. 1.4, 07-Apr-05 www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1