ISC 2SD821

Inchange Semiconductor
Product Specification
2SD820
Silicon NPN Power Transistors
・
DESCRIPTION
・With TO-3 package
・High voltage ,high speed
・Low collector saturation voltage
APPLICATIONS
・For color TV horizontal output applications
PINNING(see fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
1500
V
VCEO
Collector-emitter voltage
Open base
600
V
VEBO
Emitter-base voltage
Open collector
5
V
IC
Collector current
5
A
IE
Emitter current
-5
A
PC
Collector power dissipation
50
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-65~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SD820
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.1A; IB=0
VCEsat
Collector-emitter saturation voltage
IC=4 A;IB=0.8 A
VBEsat
Base-emitter saturation voltage
ICBO
MIN
TYP.
MAX
600
UNIT
V
5.0
V
IC=4 A;IB=0.8 A
1.5
V
Collector cut-off current
VCB=500V;IE=0
10
μA
IEBO
Emitter cut-off current
VEB=5V; IC=0
1
mA
hFE
DC current gain
IC=1A ; VCE=5V
COB
Output capacitance
IE=0; VCB=10V;f=1MHz
fT
Transition frequency
IC=0.1A ; VCE=10V
tf
Fall time
ICP=4A ;IB1=0.8A
2
3.0
8
20
165
pF
3
MHz
0.5
1.0
μs
Inchange Semiconductor
Product Specification
2SD820
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3