Inchange Semiconductor Product Specification 2SD820 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-3 package ・High voltage ,high speed ・Low collector saturation voltage APPLICATIONS ・For color TV horizontal output applications PINNING(see fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 600 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 5 A IE Emitter current -5 A PC Collector power dissipation 50 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SD820 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A; IB=0 VCEsat Collector-emitter saturation voltage IC=4 A;IB=0.8 A VBEsat Base-emitter saturation voltage ICBO MIN TYP. MAX 600 UNIT V 5.0 V IC=4 A;IB=0.8 A 1.5 V Collector cut-off current VCB=500V;IE=0 10 μA IEBO Emitter cut-off current VEB=5V; IC=0 1 mA hFE DC current gain IC=1A ; VCE=5V COB Output capacitance IE=0; VCB=10V;f=1MHz fT Transition frequency IC=0.1A ; VCE=10V tf Fall time ICP=4A ;IB1=0.8A 2 3.0 8 20 165 pF 3 MHz 0.5 1.0 μs Inchange Semiconductor Product Specification 2SD820 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3