Inchange Semiconductor Product Specification 2SC643A Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-3 package ・High voltage,high reliability ・Low collector saturation voltage APPLICATIONS ・For color TV horizontal output applications PINNING(see fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol 导体 半 电 R O T UC Absolute maximum ratings(Ta=℃) 固 SYMBOL VCBO VCEO VEBO PARAMETER Collector-base voltage IC M E ES G N A INCH Collector-emitter voltage Emitter-base voltage OND CONDITIONS Open emitter Open base Open collector VALUE UNIT 1500 V 700 V 5 V 2.5 A 50 W IC Collector current PC Collector power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC643A Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=100mA; IB=0 V(BR)EBO Emitter-base breakdown voltage IE=1mA; IC=0 VCEsat Collector-emitter saturation voltage IC=2A; IB=0.6A 8.0 V VBEsat Base-emitter saturation voltage IC=2A; IB=0.6A 1.5 V ICBO Collector cut-off current VCB=500V;IE=0 10 μA IEBO Emitter cut-off current VEB=5V; IC=0 100 μA hFE DC current gain IC=2A ; VCE=15V fT 导体 半 电 CONDITIONS 固 Transition frequency IN MAX UNIT 700 V 5 V TOR C U D ON IC M E ES 2 TYP. 5 IC=0.1A ; VCE=10V G N A CH MIN 2 MHz Inchange Semiconductor Product Specification 2SC643A Silicon NPN Power Transistors PACKAGE OUTLINE 导体 半 电 固 D N O IC R O T UC M E S GE N A H INC Fig.2 Outline dimensions 3