Inchange Semiconductor Product Specification 2SD5075 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PML package ・High breakdown voltage ・High speed switching APPLICATIONS ・Color TV horizontal output applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PML) and symbol R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO PARAMETER CONDITIONS VALUE UNIT Collector-base voltage Open emitter 1500 V Collector-emitter voltage Open base 800 V Emitter-base voltage Open collector 6 V IC Collector current 3.5 A ICM Collector current-peak 10 A PC Collector power dissipation 50 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SD5075 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEsat Collector-emitter saturation voltage IC=2.5A;IB=0.8A 8.0 V VBEsat Base-emitter saturation voltage IC=2.5A;IB=0.8A 1.5 V IEBO Emitter cut-off current VEB=5V; IC=0 1.0 mA ICBO Collector cut-off current VCB=800V; IE=0 10 μA hFE DC current gain IC=0.5 A ; VCE=5V fT Transition frequency IC=0.5 A ; VCE=10V tf Fall time IC=3A;IB1=0.8A;IB2=-1.6A VCC=200V;RL=66.7Ω 8 3 MHz 0.4 R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH 2 μs Inchange Semiconductor Product Specification 2SD5075 Silicon NPN Power Transistors PACKAGE OUTLINE R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH Fig.2 Outline dimensions 3