SavantIC Semiconductor Product Specification 2SC5150 Silicon NPN Power Transistors DESCRIPTION ·With TO-3P(H)IS package ·High speed ·High voltage ·Low saturation voltage APPLICATIONS ·Horizontal deflection output for high resolution display,colorTV ·High speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3P(H)IS) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1700 V VCEO Collector-emitter voltage Open base 700 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 10 A ICM Collector current-Peak 20 A IB Base current 5 A PC Collector power dissipation 50 W Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 SavantIC Semiconductor Product Specification 2SC5150 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0 VCEsat Collector-emitter saturation voltage IC=6A ;IB=1.5A VBEsat Base-emitter saturation voltage IC=6A ;IB=1.5A ICBO Collector cut-off current IEBO MIN TYP. MAX 700 UNIT V 3 V 1.2 V VCB=1700V; IE=0 1 mA Emitter cut-off current VEB=5V; IC=0 10 µA hFE-1 DC current gain IC=1A ; VCE=5V 10 28 hFE-2 DC current gain IC=6A ; VCE=5V 4 8.5 Cob Collector output capacitance IE=0 ; VCB=10V,f=1MHz Transition frequency IE=0.1A ; VCE=10V fT 0.9 185 pF 2 MHz Switching times (inductive load) ts Storage time tf Fall time ICP=5A;IB1(end) =1A fH=64kHz 2 2.5 4 µs 0.15 0.3 µs SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.20 mm) 3 2SC5150 SavantIC Semiconductor Product Specification 2SC5150 Silicon NPN Power Transistors 4