Inchange Semiconductor Product Specification 2SC3886 Silicon NPN Power Transistors DESCRIPTION ·With TO-3P(H)IS package ·High speed ·High voltage APPLICATIONS ·Horizontal deflection output for high resolution display ·High speed switching regulator output applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3P(H)IS) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1400 V VCEO Collector-emitter voltage Open base 600 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 8 A ICM Collector current-peak 15 A IB Base current 4 A PT Total power dissipation 50 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC3886 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=5mA ;IB=0 VCEsat Collector-emitter saturation voltage IC=6A; IB=1.5A 5 V VBEsat Base-emitter saturation voltage IC=6A; IB=1.5A 5 V ICBO Collector cut-off current VCB=1400V; IE=0 1.0 mA IEBO Emitter cut-off current VEB=5V; IC=0 10 μA hFE DC current gain IC=1A ; VCE=5V Cob Collector output capacitance IE=0 ; VCB=10V,f=1MHz Transition frequency IE=0.1A ; VCE=10V fT CONDITIONS MIN TYP. MAX 600 8 UNIT V 15 150 pF 3 8 MHz 2.5 4.0 μs 0.1 0.5 μs Switching times inductive load ts Storage time tf Fall time ICP=6A;IB1=1.2A fH =64kHz LY=120μH;CY=7500pF 2 Inchange Semiconductor Product Specification 2SC3886 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.20 mm) 3 Inchange Semiconductor Product Specification 2SC3886 Silicon NPN Power Transistors 4