SAVANTIC 2SD2500

SavantIC Semiconductor
Product Specification
2SD2500
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3P(H)IS package
·High speed
·High voltage
·Low saturation voltage
APPLICATIONS
·Horizontal deflection output for color TV
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-3P(H)IS) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
1500
V
VCEO
Collector-emitter voltage
Open base
600
V
VEBO
Emitter-base voltage
Open collector
5
V
IC
Collector current
10
A
ICM
Collector current-peak
20
A
IB
Base current
5
A
PC
Total power dissipation
50
W
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
TC=25
SavantIC Semiconductor
Product Specification
2SD2500
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-emitter breakdown voltage
IC=10mA ;IB=0
VCEsat
Collector-emitter saturation voltage
IC=6A; IB=1.5A
VBEsat
Base-emitter saturation voltage
IC=6A; IB=1.5A
ICBO
Collector cut-off current
IEBO
MIN
TYP.
MAX
600
UNIT
V
3
V
1.4
V
VCB=1500V; IE=0
1
mA
Emitter cut-off current
VEB=5V; IC=0
10
µA
hFE-1
DC current gain
IC=1A ; VCE=5V
10
30
hFE-2
DC current gain
IC=6A ; VCE=5V
4
8
Cob
Collector output capacitance
IE=0 ; VCB=10V,f=1MHz
135
pF
Transition frequency
IC=0.1A ; VCE=10V
1.7
MHz
fT
1.0
Switching times :
ts
Storage time
tf
Fall time
ICP=6A;IB1=1.5A
fH =15.75kHz
2
7
11
µs
0.35
0.7
µs
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.20 mm)
3
2SD2500
SavantIC Semiconductor
Product Specification
2SD2500
Silicon NPN Power Transistors
4