ISC 2SC3253

Inchange Semiconductor
Product Specification
2SC3253
Silicon NPN Power Transistors
DESCRIPTION
·With TO-220 package
·Short switching time
·Low collector saturation voltage
·Complement to type 2SA1289
APPLICATIONS
·Various inductance lamp drivers for
electrical equipment
·Inverters,converters
·Power amplifier
·Switching regulator ,driver
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
80
V
VCEO
Collector-emitter voltage
Open base
60
V
VEBO
Emitter-base voltage
Open collector
5
V
IC
Collector current
5
A
ICM
Collector current-peak
7
A
PC
Collector power dissipation
30
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SC3253
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=1mA ,RBE=∞
60
V
V(BR)CBO
Collector-base breakdown voltage
IC=1mA ,IE=0
80
V
V(BR)EBO
Emitter-base breakdown voltage
IE=1mA ,IC=0
5
V
Collector-emitter saturation voltage
IC=2.5A; IB=0.125A
0.4
V
ICBO
Collector cut-off current
VCB=40V; IE=0
100
μA
IEBO
Emitter cut-off current
VEB=4V; IC=0
100
μA
hFE
DC current gain
IC=1A ; VCE=2V
Transition frequency
IC=1A ; VCE=5V
VCEsat
fT
‹
CONDITIONS
hFE Classifications
Q
R
S
70-140
100-200
140-280
2
MIN
TYP.
70
MAX
UNIT
280
100
MHz
Inchange Semiconductor
Product Specification
2SC3253
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
Inchange Semiconductor
Product Specification
2SC3253
Silicon NPN Power Transistors
4