SavantIC Semiconductor Product Specification 2SC3254 Silicon NPN Power Transistors DESCRIPTION ·With TO-220 package ·Short switching time ·Low collector saturation voltage ·Complement to type 2SA1290 APPLICATIONS ·Various inductance lamp drivers for electrical equipment ·Inverters,converters ·Power amplifier ·Switching regulator ,driver PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 80 V VCEO Collector-emitter voltage Open base 60 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 7 A ICM Collector current-peak 10 A PC Collector power dissipation 35 W Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 SavantIC Semiconductor Product Specification 2SC3254 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=1mA ,RBE=; 60 V V(BR)CBO Collector-base breakdown voltage IC=1mA ,IE=0 80 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ,IC=0 7 V Collector-emitter saturation voltage IC=3.5A; IB=0.175A 0.4 V ICBO Collector cut-off current VCB=40V; IE=0 100 µA IEBO Emitter cut-off current VEB=4V; IC=0 100 µA hFE DC current gain IC=1A ; VCE=2V Transition frequency IC=1A ; VCE=5V VCEsat fT CONDITIONS MIN TYP. 70 MAX UNIT 280 100 MHz 0.1 µs 0.5 µs 0.1 µs Switching times ton Turn-on time tstg Storage time tf VCE=20V; IC=3A IB1=-IB2=0.15A;RL=6.67C Fall time hFE Classifications Q R S 70-140 100-200 140-280 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3 2SC3254 SavantIC Semiconductor Product Specification 2SC3254 Silicon NPN Power Transistors 4