DIODES ZXTC2062E6

ZXTC2062E6
20V, SOT23-6, complementary medium power transistors
Summary
BVCEO > 20 (-20)V
BVECO > 5 (-4)V
IC(cont) = 4 (-3.5)A
VCE(sat) < 50 (-65)mV @ 1A
RCE(sat) = 35 (54)m⍀
PD = 1.1W
Description
C1
Advanced process capability has been used to
achieve this high performance device.
Combining NPN and PNP transistors in the
SOT23-6 package provides a compact solution
for the intended applications
C2
B1
Features
B2
E1
•
NPN-PNP combination
•
Very low saturation voltage
•
High gain
•
SOT23-6 package
E2
Applications
•
MOSFET and IGBT gate driving
•
Motor drive
Ordering information
DEVICE
ZXTC2062E6TA
Reel size
(inches)
Tape width
(mm)
Quantity
per reel
7
8
3000
Device marking
© Zetex Semiconductors plc 2007
E1
B1
B2
C2
E2
Top view
2062
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ZXTC2062E6
Absolute maximum and thermal ratings
PARAMETER
Symbol
Limit
Unit
Collector-base voltage
VCBO
100(-25)
V
Collector-emitter voltage
VCEO
(-)20
V
Emitter-collector voltage (reverse blocking)
VECO
5(-4)
V
Emitter-base voltage
VEBO
(-)7
V
IC
4(-3.5)
A
ICM
(-)10
A
Base current
IB
(-)1
A
Power dissipation at TA =25°C(a)(f)
PD
0.7
W
5.6
mW/°C
0.9
W
7.2
mW/°C
1.1
W
8.8
mW/°C
1.1
W
8.8
mW/°C
1.7
W
13.6
mW/°C
Continuous collector current(c)(f)
Peak pulse current
Linear derating factor
PD
Power dissipation at TA =25°C(b)(f)
Linear derating factor
PD
Power dissipation at TA =25°C(b)(g)
Linear derating factor
PD
Power dissipation at TA =25°C(c)(f)
Linear derating factor
PD
Power dissipation at TA =25°C(d)(f)
Linear derating factor
Operating and storage temperature range
Tj, Tstg
-55 to +150
°C
Thermal resistance junction to ambient(a)(f)
RθJA
179
°C/W
Thermal resistance junction to ambient(b)(f)
RθJA
139
°C/W
Thermal resistance junction to ambient(b)(g)
RθJA
113
°C/W
Thermal resistance junction to ambient(c)(f)
RθJA
113
°C/W
Thermal resistance junction to ambient(d)(f)
RθJA
73
°C/W
NOTES:
(a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
(b) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
(c) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in
still air conditions.
(d) As above measured at t<5 seconds.
(e) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance
graph.
(f) For device with one active die, both collectors attached to a common sink.
(g) For device with two active dice running at equal power, split sink 50% to each collector.
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ZXTC2062E6
Thermal characteristics
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ZXTC2062E6
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
Parameter
Symbol
Min.
100(-25)
Typ.
140(-55)
Collector-emitter
breakdown voltage
(base open)
Emitter-base
breakdown voltage
Emitter-collector
breakdown voltage
(base open)
Collector-base cut-off
current
BVCEO
(-)20
35(-45)
V
IC = (-)10mA (*)
BVEBO
(-)7
(-)8.3
V
IE = (-)100 A
BVECO
5(-4)
6(-8.5)
V
IE = (-)100 A
ICBO
<1
(-)50
nA
Emitter-base cut-off
current
Collector-emitter
saturation voltage
IEBO
<1
(-)0.5
(-)50
A
nA
40(-55)
50(-65)
mV
IC = (-)1A, IB = (-)100mA(*)
60(-100)
75(-135)
mV
IC = (-)1A, IB = (-)20mA(*)
95(-185) 115(-280)
mV
IC = (-)2A, IB = (-)40mA(*)
VCE(sat)
Base-emitter
saturation voltage
VBE(sat)
Base-emitter turn-on
voltage
VBE(on)
Static forward current
transfer ratio
hFE
Transition frequency
fT
Max.
Unit Conditions
V
IC = (-)100␮A
(-250)
mV
(IC = -3.5A, IB = -175mA)(*)
140
190
mV
IC = 4A, IB = 200mA(*)
(-925)
(-1000)
mV
(IC = -3.5A, IB = -175mA(*))
940
1050
mV
IC = 4A, IB = 200mA(*)
(-835)
(-900)
mV
(IC = -3.5A, VCE = -2V(*))
810
900
mV
IC = 4A, VCE = 2V(*)
300(300) 450(450) 900(900)
IC = (-)10mA, VCE = (-)2V(*)
280(170) 420(300)
IC = (-)1A, VCE = (-)2V(*)
(65)
(100)
(IC = -3.5A, VCE = -2V(*))
140
210
IC = 4A, VCE = 2V(*)
(15)
(IC = -10A, VCE = -2V(*))
15
IC = 15A, VCE = 2V(*)
215
MHz IC = (-)50mA, VCE = (-)10V
f = 100MHz
Output capacitance
COBO
Delay time
td
68(56)
ns
Rise time
Storage time
Fall time
tr
72(68)
361(158)
64(59)
ns
ns
ns
tf
VEB = (-)5.6V
(-190)
(290)
17(21)
ts
VCB =100(-25)V
VCB =100(-25)V, Tamb= 100°C
25(30)
pF
VCB = (-)10V, f = 1MHz(*)
VCC = (-)10V. IC = (-)1A,
IB1 = -IB2= (-)10mA.
NOTES:
(*) Measured under pulsed conditions. Pulse width ≤ 300µs; duty cycle ≤ 2%.
( ) = PNP
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ZXTC2062E6
NPN electrical characteristics
1
0.5
Tamb=25°C
0.4
VCE(SAT) (V)
IC/IB=50
100m
VCE(SAT) (V)
IC/IB=10
IC/IB=100
IC/IB=20
10m
IC/IB=10
1m
1m
10m
100m
1
IC Collector Current (A)
0.3
150°C
0.2
100°C
0.1
25°C
-55°C
0.0
1m
10
10m
600
1.2
1.0
0.8
0.6
0.4
500
100°C
400
25°C
300
200
-55°C
100
0.2
0.0
1m
700
10m
100m
1
IC Collector Current (A)
10
0
1.0
VBE(SAT) (V)
VCE=2V
Typical Gain (hFE)
Normalised Gain
1.2
150°C
1
10
VCE(SAT) v IC
VCE(SAT) v IC
1.4
100m
IC Collector Current (A)
25°C
-55°C
0.8
150°C
0.6
100°C
0.4
1m
hFE v IC
IC/IB=10
10m
100m
1
IC Collector Current (A)
10
VBE(SAT) v IC
1.0
VCE=2V
-55°C
25°C
VBE(ON) (V)
0.8
0.6
150°C
0.4
100°C
0.2
1m
10m
100m
1
IC Collector Current (A)
10
VBE(ON) v IC
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ZXTC2062E6
PNP electrical characteristics
1
0.6
Tamb=25°C
- VCE(SAT) (V)
IC/IB=100
100m
- VCE(SAT) (V)
0.5
IC/IB=50
10m
IC/IB=20
IC/IB=10
1m
1m
10m
100m
1
- IC Collector Current (A)
0.4
0.3
25°C
0.6
0.4
-55°C
0.2
0.0
1m
10m
100m
1
- IC Collector Current (A)
10
900
850
800
750
700
650
600
550
500
450
400
350
300
250
200
150
100
50
0
- VBE(SAT) (V)
100°C
25°C
-55°C
10m
100m
1
- IC Collector Current (A)
10
VCE(SAT) v IC
Typical Gain (hFE)
Normalised Gain
1.4
1.2
1.0
0.8
VCE=2V
150°C
100°C
0.1
VCE(SAT) v IC
1.8
1.6
150°C
0.2
0.0
1m
10
IC/IB=10
1.2
IC/IB=10
1.0
-55°C
0.8
150°C
0.6
100°C
0.4
1m
hFE v IC
25°C
10m
100m
1
- IC Collector Current (A)
10
VBE(SAT) v IC
1.2
VCE=2V
1.0
25°C
- VBE(ON) (V)
-55°C
0.8
0.6
150°C
100°C
0.4
0.2
1m
10m
100m
1
- IC Collector Current (A)
10
VBE(ON) v IC
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ZXTC2062E6
Package outline SOT23-6
Package outline
Pad latout details
0.95
0.037
1.06
0.042
2.2
0.087
mm
inches
0.65
0.026
DIM
A
A1
A2
b
C
D
E
E1
L
e
e1
L
Millimeters
Min.
0.90
0.00
0.90
0.35
0.09
2.70
2.20
1.30
0.10
Inches
Max.
1.45
0.15
1.30
0.50
0.26
3.10
3.20
1.80
0.60
Min.
0.354
0.00
0.0354
0.0078
0.0035
0.1062
0.0866
0.0511
0.0039
0.95 REF
1.90 REF
0°
Max.
0.0570
0.0059
0.0511
0.0196
0.0102
0.1220
0.1181
0.0708
0.0236
0.0374 REF
0.0748 REF
30°
0°
30°
Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches
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ZXTC2062E6
Definitions
Product change
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service. Customers are solely responsible for obtaining the latest relevant information before placing orders.
Applications disclaimer
The circuits in this design/application note are offered as design ideas. It is the responsibility of the user to ensure that the circuit is fit for
the user’s application and meets with the user’s requirements. No representation or warranty is given and no liability whatsoever is
assumed by Zetex with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights
arising from such use or otherwise. Zetex does not assume any legal responsibility or will not be held legally liable (whether in contract,
tort (including negligence), breach of statutory duty, restriction or otherwise) for any damages, loss of profit, business, contract,
opportunity or consequential loss in the use of these circuit applications, under any circumstances.
Life support
Zetex products are specifically not authorized for use as critical components in life support devices or systems without the express written
approval of the Chief Executive Officer of Zetex Semiconductors plc. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body
or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to
cause the failure of the life support device or to affect its safety or effectiveness.
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To ensure quality of service and products we strongly advise the purchase of parts directly from Zetex Semiconductors or one of our
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ESD (Electrostatic discharge)
Semiconductor devices are susceptible to damage by ESD. Suitable precautions should be taken when handling and transporting devices.
The possible damage to devices depends on the circumstances of the handling and transporting, and the nature of the device. The extent
of damage can vary from immediate functional or parametric malfunction to degradation of function or performance in use over time.
Devices suspected of being affected should be replaced.
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Zetex Semiconductors is committed to environmental excellence in all aspects of its operations which includes meeting or exceeding regulatory requirements with respect to the use of hazardous substances. Numerous successful programs have been implemented to reduce
the use of hazardous substances and/or emissions.
All Zetex components are compliant with the RoHS directive, and through this it is supporting its customers in their compliance with
WEEE and ELV directives.
Product status key:
“Preview”
Future device intended for production at some point. Samples may be available
“Active”
Product status recommended for new designs
“Last time buy (LTB)”
Device will be discontinued and last time buy period and delivery is in effect
“Not recommended for new designs” Device is still in production to support existing designs and production
“Obsolete”
Production has been discontinued
Datasheet status key:
“Draft version”
This term denotes a very early datasheet version and contains highly provisional information, which
may change in any manner without notice.
“Provisional version”
This term denotes a pre-release datasheet. It provides a clear indication of anticipated performance.
However, changes to the test conditions and specifications may occur, at any time and without notice.
“Issue”
This term denotes an issued datasheet containing finalized specifications. However, changes to
specifications may occur, at any time and without notice.
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© 2007 Published by Zetex Semiconductors plc
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