ZXTC2063E6 40V, SOT23-6, complementary medium power transistors Summary BVCEO > 40 (-40)V BVECO > 6 (-3)V IC(cont) = 3.5 (-3)A VCE(sat) < 60 (-90)mV @ 1A RCE(sat) = 38 (58)m⍀ PD = 1.1W Description C1 Advanced process capability has been used to achieve this high performance device. Combining NPN and PNP transistors in the SOT23-6 package provides a compact solution for the intended applications. B1 C2 B2 Features E1 • NPN - PNP combination • Very low saturation voltage • High gain • SOT23-6 package Applications • MOSFET and IGBT gate driving • Motor drive ZXTC2063E6TA C1 E1 B1 B2 C2 E2 Top view Ordering information Device E2 reel size (inches) Tape width (mm) Quantity per reel 7 8 3000 Device marking 2063 Issue 1 - October 2007 © Zetex Semiconductors plc 2007 1 www.zetex.com ZXTC2063E6 Absolute maximum and thermal ratings Parameter Symbol Limit Unit Collector-base voltage VCBO 130(-45) V Collector-emitter voltage VCEO 40(-40) V Emitter-collector voltage (reverse blocking) VECO 6(-3) V Emitter-base voltage VEBO 7(-7) V IC 3.5(-3) A ICM 9(-9) A IB 1(-1) A 0.7 W 5.6 mW/°C 0.9 W 7.2 mW/°C 1.1 W 8.8 mW/°C 1.1 W 8.8 mW/°C 1.7 W PD 13.6 mW/°C Operating and storage temperature range Tj, Tstg -55 to +150 °C Thermal resistance junction to ambient(a)(f) R⍜JC 179 °C/W Thermal resistance junction to ambient(b)(f) R⍜JA 139 °C/W Thermal resistance junction to ambient(b)(g) R⍜JC 113 °C/W Thermal resistance junction to ambient(c)(f) R⍜JC 113 °C/W Thermal resistance junction to ambient(d)(f) R⍜JA 73 °C/W Continuous collector current(c)(f) Peak pulse current Base current Power dissipation @ Tamb = 25°C(a)(f) Linear derating factor PD Power dissipation @ Tamb = 25°C(b)(f) Linear derating factor PD Power dissipation @ Tamb = 25°C(b)(g) Linear derating factor PD Power dissipation @ Tamb = 25°C(c)(f) Linear derating factor PD Power dissipation @ Tamb = 25°C(d)(f) Linear derating factor NOTES: (a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (c) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions. (d) As above measured at t<5 seconds. (e) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph. (f) For device with one active die, both collectors attached to a common sink. (g) For device with two active dice running at equal power, split sink 50% to each collector. Issue 1 - October 2007 © Zetex Semiconductors plc 2007 2 www.zetex.com ZXTC2063E6 Thermal characteristics Issue 1 - October 2007 © Zetex Semiconductors plc 2007 3 www.zetex.com ZXTC2063E6 Electrical characteristics (at Tamb = 25°C unless otherwise stated) Parameter Symbol Min. Collector-base breakdown voltage BVCBO Collector-emitter breakdown voltage (base open) BVCEO (-)40 Emitter-base breakdown voltage BVEBO Emitter-collector breakdown voltage (reverse blocking) Typ. Max. 130(-45) 170(-80) Unit Conditions V IC = (-)100A 63(-65) V IC = (-)10mA (*) * (-)7 (-)8.3 V IE = (-)100A BVECX (-)6 (-)7.4 V IE = (-)100A, RBC < 1k⍀ or 0.25V > VBC > -0.25V (0.25V < VBC < -0.25V) Emitter-collector breakdown voltage (base open) BVECO 6(-3) 7.4(-8.7) V IE = (-)100A Collector-base cut-off current ICBO Emitter-base cut-off current IEBO Collector-emitter saturation voltage VCE(sat) <1 (-)50 nA VCB =100(-36)V (-)20 A VCB =100(-36)V, Tamb= 100°C <1 (-)50 nA VEB = (-)5.6V 50(-70) 60(-90) 85(-195) 110(-290) mV IC = (-)1A, IB = (-)100mA * mV IC = (-)1A, IB = (-)20mA * 150 220 (-175) (-260) mV (IC = -3A, IB = -300mA *) 135 195 mV IC = 3.5A, IB = 350mA * Base-emitter saturation VBE(sat) voltage (-935) (-1000) mV (IC = -3A, IB = -300mA *) 960 1050 mV IC = 3.5A, IB = 350mA * Base-emitter turn-on voltage VBE(on) (-855) 860 (-950) 950 mV (IC = -3A, VCE = -2V *) mV IC = 3.5A, VCE = 2V * Static forward current transfer ratio hFE ( )450 ( )900 ( )300 mV IC = 2A, IB = 40mA * IC = (-)10mA, VCE = (-)2V * IC = (-)1A, VCE = (-)2V * 280(200) 400(280) (20) (50) (IC = -3A, VCE = -2V *) 40 60 IC = 3.5A, VCE = 2V * MHz IC = (-)50mA, VCE = (-)10V f = 100MHz Transition frequency fT 190 (270) Output capacitance COBO 12(17) Delay time td Rise time 20(25) pF VCB = (-)10V, f = 1MHz * 64(57) ns tr 108(69) ns VCC = (-)10V. IC = (-)1A, IB1 = IB2= (-)10mA. Storage time ts 428(154) ns Fall time tf 130(60) ns NOTES: (*) Measured under pulsed conditions. Pulse width ⱕ300s; duty cycle ⱕ2% ( ) = PNP Issue 1 - October 2007 © Zetex Semiconductors plc 2007 4 www.zetex.com ZXTC2063E6 NPN Characteristics Issue 1 - October 2007 © Zetex Semiconductors plc 2007 5 www.zetex.com ZXTC2063E6 PNP Characteristics Issue 1 - October 2007 © Zetex Semiconductors plc 2007 6 www.zetex.com ZXTC2063E6 Package outline - SOT23-6 DIM A A1 A2 b C D E E1 L e e1 L Millimeters Min. 0.90 0.00 0.90 0.35 0.09 2.70 2.20 1.30 0.10 Inches Max. 1.45 0.15 1.30 0.50 0.26 3.10 3.20 1.80 0.60 Min. 0.354 0.00 0.0354 0.0078 0.0035 0.1062 0.0866 0.0511 0.0039 0.95 REF 1.90 REF 0° Max. 0.0570 0.0059 0.0511 0.0196 0.0102 0.1220 0.1181 0.0708 0.0236 0.0374 REF 0.0748 REF 30° 0° 30° Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches Issue 1 - October 2007 © Zetex Semiconductors plc 2007 7 www.zetex.com ZXTC2063E6 Definitions Product change Zetex Semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service. Customers are solely responsible for obtaining the latest relevant information before placing orders. Applications disclaimer The circuits in this design/application note are offered as design ideas. It is the responsibility of the user to ensure that the circuit is fit for the user’s application and meets with the user’s requirements. No representation or warranty is given and no liability whatsoever is assumed by Zetex with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights arising from such use or otherwise. Zetex does not assume any legal responsibility or will not be held legally liable (whether in contract, tort (including negligence), breach of statutory duty, restriction or otherwise) for any damages, loss of profit, business, contract, opportunity or consequential loss in the use of these circuit applications, under any circumstances. Life support Zetex products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Zetex Semiconductors plc. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Reproduction The product specifications contained in this publication are issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. Terms and Conditions All products are sold subjects to Zetex’ terms and conditions of sale, and this disclaimer (save in the event of a conflict between the two when the terms of the contract shall prevail) according to region, supplied at the time of order acknowledgement. For the latest information on technology, delivery terms and conditions and prices, please contact your nearest Zetex sales office. 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Samples may be available “Active” Product status recommended for new designs “Last time buy (LTB)” Device will be discontinued and last time buy period and delivery is in effect “Not recommended for new designs” Device is still in production to support existing designs and production “Obsolete” Production has been discontinued Datasheet status key: “Draft version” This term denotes a very early datasheet version and contains highly provisional information, which may change in any manner without notice. “Provisional version” This term denotes a pre-release datasheet. It provides a clear indication of anticipated performance. However, changes to the test conditions and specifications may occur, at any time and without notice. “Issue” This term denotes an issued datasheet containing finalized specifications. However, changes to specifications may occur, at any time and without notice. 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