SILICON PHOTODIODE VTP1332 FEATURES PRODUCT DESCRIPTION • Low dark current • Fast response This VTP processed P on N planar silicon photodiode is housed in an IR transmitting, T-1 3/4 endlooking package. • Infrared transmitting/visible blocking spectral range • Low junction capacitance These diodes exhibit low dark current under reverse bias. The VTP process offers low capacitance, resulting in fast response times. ELECTRO-OPTICAL CHARACTERISTICS @ 25° C PARAMETER SYMBOL MIN. SHORT CIRCUIT CURRENT @ 100 fc, 2850 K ISC 75 RESPONSIVITY @ 880 nm Re 0.050 DARK CURRENT @ VR = 10 V ID REVERSE BREAKDOWN VOLTAGE @ 100 µA VBR JUNCTION CAPACITANCE @ VR = 0 V, 1 MHz CJ ANGULAR RESPONSE (50% RESPONSE POINT) PACKAGE DIMENSIONS θ1/2 TYP. MAX. UNITS µA A/(W/cm2) 0.065 25 nA V 30 100 ±20 pF Degrees inch (mm) CASE 26 T-1 3/4 CHIP SIZE: .075 x .075 (1.90 x 1.90) TOTAL EXPOSED AREA: .0036 in2 (2.326 mm2) 10900 PAGE AVE. ST. LOUIS, MO. 63132 USA FAX 314-423-3956 PHONE 314-423-4900 GENERAL CHARACTERISTICS PARAMETER SYMBOL TYPICAL RATING UNITS OPEN CIRCUIT VOLTAGE @ 100 fc, 2850 K SOURCE VOC 420 mV PEAK SPECTRAL RESPONSE @ 25°C λpk 920 nm SPECTRAL APPLICATION RANGE λrange 725 - 1100 nm RISE/FALL TIMES @ 800 nm, VR =10 V, RL = 50 Ω tR / tF 20 ns TEMPERATURE COEFFICIENT SHORT CIRCUIT CURRENT @ 2850 K SOURCE DARK CURRENT @ VR = 10 V OPEN CIRCUIT VOLTAGE TC ISC TC ID TC VOC +0.20 +11.0 −2.0 % / °C % / °C mV/ °C TEMPERATURE RANGE, OPERATING & STORAGE TAMB − 40 to +100 °C TYPICAL CHARACTERISTIC CURVES RELATIVE SPECTRAL RESPONSE ANGULAR RESPONSE RELATIVE JUNCTION CAPACITANCE vs BIAS VOLTAGE (REFERRED TO ZERO BIAS) Specifications subject to change without prior notice. Information supplied by PerkinElmer Optoelectronics is believed to be reliable, however, no responsibility is assumed for possible inaccuracies or omissions. The user should determine the suitability of this product in his own application. No patent rights are granted to any devices or circuits described herein. abcto