VISHAY VSKD600_10

VSKD600 Series
Vishay Semiconductors
Standard Diodes, 600 A
(SUPER MAGN-A-PAK Power Modules)
FEATURES
• High current capability
• High surge capability
• High voltage ratings up to 2000 V
• 3000 VRMS isolating voltage with non-toxic substrate
• Industrial standard package
• UL approved file E78996
• Compliant to RoHS directive 2002/95/EC
TYPICAL APPLICATIONS
SUPER MAGN-A-PAK
• Rectifying bridge for large motor drives
PRODUCT SUMMARY
IF(AV)
600 A
Type
Modules - Diode, High Voltage
• Rectifying bridge for large UPS
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
TC
IF(RMS)
TC
VALUES
UNITS
600
A
100
°C
942
A
100
°C
50 Hz
19 000
60 Hz
20 100
50 Hz
1805
60 Hz
1683
A
IFSM
I2t
I2t
kA2s
18 050
kA2s
VRRM
Range
800 to 2000
V
TStg, TJ
Range
- 40 to 150
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
VRRM, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
VRSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
08
800
900
12
1200
1300
16
1600
1700
20
2000
2100
VSKD600..
IRRM MAXIMUM
AT TJ MAXIMUM
mA
50
Document Number: 93583
Revision: 02-Jul-10
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
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1
VSKD600 Series
Vishay Semiconductors
Standard Diodes, 600 A
(SUPER MAGN-A-PAK Power Modules)
FORWARD CONDUCTION
PARAMETER
SYMBOL
Maximum average forward current
at case temperature
Maximum RMS forward current
Maximum peak, one-cycle forward,
non-repetitive surge current
IF(AV)
IF(RMS)
IFSM
TEST CONDITIONS
180° conduction, half sine wave
100
°C
A
t = 10 ms
No voltage
reapplied
19.0
100 % VRRM
reapplied
16.2
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
I2t
No voltage
reapplied
20.1
Sinusoidal half wave,
initial TJ = TJ maximum
kA
17.2
1805
1683
1319
100 % VRRM
reapplied
1230
t = 0.1 ms to 10 ms, no voltage reapplied
18 050
t = 8.3 ms
Maximum I2t for fusing
A
942
t = 10 ms
I2t
UNITS
600
180° conduction, half sine wave at TC = 100 °C
t = 8.3 ms
Maximum I2t for fusing
VALUES
Low level value of threshold voltage
VF(TO)1
(16.7 % x  x IF(AV) < I <  x IF(AV)), TJ = TJ maximum
0.70
High level value of threshold voltage
VF(TO)2
(I >  x IF(AV)), TJ = TJ maximum
0.77
kA2s
kA2s
V
Low level value of forward slope resistance
rf1
(16.7 % x  x IF(AV) < I <  x IF(AV)), TJ = TJ maximum
0.28
High level value of forward slope resistance
rf2
(I >  x IF(AV)), TJ = TJ maximum
0.25
Ipk = 1800 A, TJ = 25 °C, tp = 10 ms sine pulse
1.45
V
VALUES
UNITS
3000
V
50
mA
VALUES
UNITS
- 40 to 150
°C
Maximum forward voltage drop
VFM
m
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
RMS insulation voltage
VINS
t=1s
Maximum peak reverse and
off-state leakage current
IRRM
TJ = TJ maximum, rated VRRM applied
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction operating and storage
temperature range
TJ, TStg
Maximum thermal resistance,
junction to case per junction
RthJC
Maximum thermal resistance,
case to heatsink
RthC-hs
Mounting torque
± 10 %
SMAP to heatsink
busbar to SMAP
TEST CONDITIONS
DC operation
K/W
0.02
A mounting compound is recommended and the torque
should be rechecked after a period of 3 hours to allow
for the spread of the compound.
Approximate weight
Case style
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2
0.065
6 to 8
Nm
12 to 15
1500
See dimensions - link at the end of datasheet
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
g
SUPER MAGN-A-PAK
Document Number: 93583
Revision: 02-Jul-10
VSKD600 Series
Standard Diodes, 600 A
Vishay Semiconductors
(SUPER MAGN-A-PAK Power Modules)
RthJC CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
180°
0.009
0.006
120°
0.011
0.011
90°
0.014
0.015
60°
0.021
0.022
30°
0.037
0.038
TEST CONDITIONS
UNITS
TJ = TJ maximum
K/W
VSKD600.. Series
R thJC (DC) = 0.065 K/W
140
130
Conduction Angle
120
110
100
60°
30°
90°
120°
90
180°
80
0
100
200
300
400
500
600
Maximum Average Forward Power Loss (W)
150
700
180°
120°
90°
60°
30°
600
500
RMS Limit
400
300
Conduction Angle
200
VSKD600.. Series
Per Junction
TJ = 150°C
100
0
700
0
100
200
300
400
500
600
Average Forward Current (A)
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 3 - Forward Power Loss Characteristics
150
VSKD600.. Series
R thJC (DC) = 0.065 K/W
140
130
120
Conduction Period
110
60°
100
30°
90°
90
120°
180°
DC
80
0
200
400
600
800
1000
Maximum Average Forward Power Loss (W)
Maximum Allowable Case Temperature (°C)
Maximum Allowable Case Temperature (°C)
Note
• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
1000
DC
180°
120°
90°
60°
30°
900
800
700
600
500
400
RMS Limit
Conduction Period
300
VSKD600.. Series
Per Junction
TJ = 150°C
200
100
0
0
200
400
600
800
1000
Average Forward Current (A)
Average Forward Current (A)
Fig. 2 - Current Ratings Characteristics
Fig. 4 - Forward Power Loss Characteristics
Document Number: 93583
Revision: 02-Jul-10
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
3
VSKD600 Series
Standard Diodes, 600 A
(SUPER MAGN-A-PAK Power Modules)
Peak Half Sine Wave Forward Current (A
)
Peak Half Sine Wave Forward Current (A)
Vishay Semiconductors
18000
At Any Rated Load Condition And With
Rated VRRM Applied Following Surge.
16000
Initial TJ = 150°C
@ 60 Hz 0.0083 s
14000
@ 50 Hz 0.0100 s
12000
10000
8000
VSKD600.. Series
Per Junction
6000
4000
1
10
20000
Maximum Non Repetitive Surge Curren t
Versus Pulse Train Duration.
Initial TJ
= 150°C
No Voltage Reapplied
Rated VRRM Reapplied
18000
16000
14000
12000
10000
8000
VSKD600.. Series
Per Junction
6000
4000
0.01
100
0.1
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
1000
SA
=
2
0.0
W
K/
-D
ta
el
0.2
5K
/W
0.3
5K
/W
0.5 K
/W
R
VSKD600.. Series
Per Junction
TJ = 150°C
R th
400
W
K/
W
K/
180°
(Sine)
200
4
K/
W
0.
12
K/
W
0.1
6K
/W
800
600
6
0.
08
DC
0
0.
0
0.
Maximum Total Forward Power Loss (W)
1
Pulse Train Duration (s)
0
0
200
400
600
800
1000
0
Total RMS Output Current (A)
25
50
75
100
125
150
Maximum Allowable Ambient Temperature (°C)
Fig. 7 - Forward Power Loss Characteristics
SA
=
/W
1K
0.0
-D
ta
el
1500
R th
2000
K/
W
4K
/W
0.0
5K
/W
0.
0
W
K/
0.
03
180°
(Sine)
180°
(Rect)
2500
02
0.
0.0
8K
/W
0.12
K/ W
2 x VSKD600.. Series 0.2 K
/W
1000
R
Maximum Total Power Loss (W)
3000
Single Phase Bridge
Connected
TJ = 150°C
500
0
0
200
400
600
800
1000
Total Output Current (A)
1200
0
25
50
75
100
125
150
Maximum Allowable Ambient Temperature (°C )
Fig. 8 - Forward Power Loss Characteristics
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For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
Document Number: 93583
Revision: 02-Jul-10
VSKD600 Series
Standard Diodes, 600 A
Vishay Semiconductors
(SUPER MAGN-A-PAK Power Modules)
R th
4000
SA
0.
02
1500
0.08
3 x VSKD600.. Series
Three Phase Bridge
Connected
T J = 150°C
1000
500
R
0.0
5
ta
el
2000
-D
2500
W
K/
K/
W
0.0
3K
/W
120°
(Rect)
3000
01
0.
3500
=
Maximum Total Power Loss (W)
4500
K/ W
K/ W
0.12 K
/W
0.2 K/ W
0
0
300
600
900
1200
1500
1800
0
25
50
75
100
125
150
Maximum Allowable Ambient Temperature (°C )
Total Output Current (A)
Transient Thermal Impedance Z thJC (K/W )
Fig. 9 - Forward Power Loss Characteristics
0.1
VSKD600.. Series
Per Junction
0.01
Steady State Value:
R thJC = 0.065 K/W
(DC Operation)
0.001
0.001
0.01
0.1
1
10
100
Square Wave Pulse Duration (s)
Fig. 10 - Thermal Impedance ZthJC Characteristic
Document Number: 93583
Revision: 02-Jul-10
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
5
VSKD600 Series
Vishay Semiconductors
Standard Diodes, 600 A
(SUPER MAGN-A-PAK Power Modules)
ORDERING INFORMATION TABLE
Device code
VSK
D
600
1
2
3
-
20
4
1
-
Module type
2
-
Circuit configuration D = 2 diodes in series
(see Circuit Configuration table)
3
-
Current rating
4
-
Voltage code x 100 = VRRM (see Voltage Ratings table)
CIRCUIT CONFIGURATION
CIRCUIT DESCRIPTION
CIRCUIT
CONFIGURATION CODE
Two diodes doubler circuit
D
CIRCUIT DRAWING
3
-
2
~
+
1
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com
6
www.vishay.com/doc?95088
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
Document Number: 93583
Revision: 02-Jul-10
Outline Dimensions
Vishay Semiconductors
Super MAGN-A-PAK Diode
52 (2.05)
DIMENSIONS in millimeters (inches)
31.0
(1.22)
44.0
(1.73)
50.0
(1.97)
Fast-on tabs
2.8 x 0.8 (0.11 x 0.03)
3
2
26.0
(0.98)
26.0
(0.98)
20.1
(0.78)
1
28.0
(1.10)
48.0 (1.89)
60.0 (2.36)
M10
36.4 (1.14)
4.5 (0.20)
112.0 (4.41)
124.0 (4.88)
1.0 (0.039)
149.0 (5.67)
Document Number: 95088
Revision: 20-Mar-08
For technical questions, contact: [email protected]
www.vishay.com
1
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Document Number: 91000
Revision: 11-Mar-11
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