VS-20ETS08SPbF, VS-20ETS12SPbF High Voltage Series Vishay Semiconductors Input Rectifier Diode, 20 A FEATURES Base cathode 2 1 Anode D2PAK • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Compliant to RoHS directive 2002/95/EC • Halogen-free according to IEC 61249-2-21 definition • Designed and qualified for industrial level 3 Anode APPLICATIONS • Input rectification • Vishay Semiconductors switches and output rectifiers which are available in identical package outlines PRODUCT SUMMARY VF at 10 A <1V IFSM 300 A VRRM 800 V/1200 V DESCRIPTION The VS-20ETS...SPbF rectifier High Voltage Series has been optimized for very low forward voltage drop, with moderate leakage. The glass passivation technology used has reliable operation up to 150 °C junction temperature. OUTPUT CURRENT IN TYPICAL APPLICATIONS APPLICATIONS SINGLE-PHASE BRIDGE THREE-PHASE BRIDGE UNITS 16.3 21 A Capacitive input filter TA = 55 °C, TJ = 125 °C common heatsink of 1 °C/W MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS IF(AV) Sinusoidal waveform 20 A VRRM 800/1200 V IFSM 300 A 20 A, TJ = 25 °C VF TJ 1.1 V - 40 to 150 °C VOLTAGE RATINGS VRRM, MAXIMUM PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V VS-20ETS08SPbF 800 900 VS-20ETS12SPbF 1200 1300 PART NUMBER IRRM AT 150 °C mA 1 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES Maximum average forward current IF(AV) TC = 105 °C, 180° conduction half sine wave 20 Maximum peak one cycle non-repetitive surge current IFSM 10 ms sine pulse, rated VRRM applied 250 10 ms sine pulse, no voltage reapplied 300 Maximum I2t for fusing I2t Maximum I2t for fusing I2t Document Number: 94340 Revision: 28-Jul-10 10 ms sine pulse, rated VRRM applied 316 10 ms sine pulse, no voltage reapplied 442 t = 0.1 ms to 10 ms, no voltage reapplied 4420 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] UNITS A A2s A2s www.vishay.com 1 VS-20ETS08SPbF, VS-20ETS12SPbF High Voltage Series Vishay Semiconductors Input Rectifier Diode, 20 A ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL Maximum forward voltage drop VFM Forward slope resistance rt Threshold voltage VF(TO) Maximum reverse leakage current IRM TEST CONDITIONS 20 A, TJ = 25 °C TJ = 150 °C TJ = 25 °C VR = Rated VRRM TJ = 150 °C VALUES UNITS 1.1 V 10.4 m 0.85 V 0.1 mA 1.0 THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TJ, TStg Maximum thermal resistance, junction to case RthJC Maximum thermal resistance, junction to ambient RthJA (1) Typical thermal resistance, case to heatsink TEST CONDITIONS RthCS Marking device UNITS - 40 to 150 °C DC operation 1.3 For D2PAK version 62 Mounting surface, smooth and greased 0.5 °C/W 2 g 0.07 oz. minimum 6.0 (5.0) maximum 12 (10) kgf · cm (lbf · in) Approximate weight Mounting torque VALUES Case style D2PAK (SMD-220) 20ETS08S 20ETS12S Note (1) When mounted on 1” square (650 mm2) PCB of FR-4 or G-10 material 4 oz. (140 μm) copper 40 °C/W For recommended footprint and soldering techniques refer to application note #AN-994 www.vishay.com 2 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 94340 Revision: 28-Jul-10 VS-20ETS08SPbF, VS-20ETS12SPbF High Voltage Series Input Rectifier Diode, 20 A 35 20ETS.. Series RthJC (DC) = 1.3 °C/W Maximum Average Forward Power Loss (W) Maximum Allowable Case Temperature (°C) 150 140 Ø 130 Conduction angle 120 110 100 60° 30° 90° 120° 30 25 20 RMS limit 15 Ø 10 Conduction period 20ETS.. Series TJ = 150 °C 5 0 0 2 4 6 8 10 12 14 16 18 20 22 0 5 10 15 20 25 Average Forward Current (A) Average Forward Current (A) Fig. 1 - Current Rating Characteristics Fig. 4 - Forward Power Loss Characteristics 150 300 20ETS.. Series RthJC (DC) = 1.3 °C/W 140 130 Peak Half Sine Wave Forward Current (A) Maximum Allowable Case Temperature (°C) DC 180° 120° 90° 60° 30° 180° 10 Ø Conduction period 120 30° 110 60° 90° 100 120° At any rated load condition and with rated VRRM applied following surge. Initial TJ = 150 °C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 250 200 150 100 20ETS.. Series 180° DC 90 50 0 5 10 15 20 30 25 1 35 Average Forward Current (A) 300 180° 120° 90° 60° 30° 25 20 Peak Half Sine Wave Forward Current (A) 30 10 RMS limit 15 Ø 10 Conduction angle 20ETS.. Series TJ = 150 °C 5 100 Number of Equal Amplitude Half Cycle Current Pulse (N) Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 2 - Current Rating Characteristics Maximum Average Forward Power Loss (W) Vishay Semiconductors Maximum non-repetitive surge current versus pulse train duration. Initial TJ = 150 °C No voltage reapplied Rated VRRM reapplied 250 200 150 100 20ETS.. Series 0 50 0 4 8 12 16 20 24 0.01 0.1 1 Average Forward Current (A) Pulse Train Duration (s) Fig. 3 - Forward Power Loss Characteristics Fig. 6 - Maximum Non-Repetitive Surge Current Document Number: 94340 Revision: 28-Jul-10 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 3 VS-20ETS08SPbF, VS-20ETS12SPbF High Voltage Series Input Rectifier Diode, 20 A Instantaneous Forward Current (A) Vishay Semiconductors 1000 TJ = 25°C 100 TJ = 150°C 10 20ETS.. Series 1 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Instantaneous Forwad Voltage (V) Fig. 7 - Forward Voltage Drop Characteristics ZthJC - Transient Thermal Impedance (°C/W) 10 Steady state value (DC operation) 1 D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 0.1 Single pulse 0.01 0.0001 0.001 0.01 20ETS.. Series 0.1 1 Square Wave Pulse Duration (s) Fig. 8 - Thermal Impedance ZthJC Characteristics www.vishay.com 4 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 94340 Revision: 28-Jul-10 VS-20ETS08SPbF, VS-20ETS12SPbF High Voltage Series Input Rectifier Diode, 20 A Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 20 E T S 12 S 1 2 3 4 5 6 7 1 - HPP product suffix 2 - Current rating (20 = 20 A) 3 - Circuit configuration TRL PbF 8 9 E = Single diode 4 - Package: T = TO-220AC 5 - Type of silicon: 6 - Voltage code x 100 = VRRM 7 - S = TO-220 D2PAK (SMD-220) version 8 - S = Standard recovery rectifier 08 = 800 V 12 = 1200 V None = Tube TRL = Tape and reel (left oriented) TRR = Tape and reel (right oriented) 9 - PbF = Lead (Pb)-free LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95046 Part marking information www.vishay.com/doc?95054 Packaging information www.vishay.com/doc?95032 SPICE model www.vishay.com/doc?95409 Document Number: 94340 Revision: 28-Jul-10 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 5 Outline Dimensions Vishay Semiconductors D2PAK DIMENSIONS in millimeters and inches Conforms to JEDEC outline D2PAK (SMD-220) (2)(3) E B Pad layout A A (E) c2 11.00 MIN. (0.43) A (3) L1 4 9.65 MIN. (0.38) (D1) (3) Detail A D H 1 2 17.90 (0.70) 15.00 (0.625) (2) 3 3.81 MIN. (0.15) L2 B B 2.32 MIN. (0.08) A 2 x b2 c 2.64 (0.103) 2.41 (0.096) (3) E1 C View A - A 2xb ± 0.004 M B 0.010 M A M B Plating H 2x e Base Metal (4) b1, b3 Gauge plane Seating plane Lead assignments Diodes 1. - Anode (two die)/open (one die) 2., 4. - Cathode 3. - Anode SYMBOL MILLIMETERS MIN. c1 (4) (c) B 0° to 8° MAX. L3 Lead tip A1 L (b, b2) L4 Section B - B and C - C Scale: None Detail “A” Rotated 90 °CW Scale: 8:1 INCHES MIN. MAX. NOTES SYMBOL MILLIMETERS MIN. MAX. INCHES MIN. MAX. NOTES A 4.06 4.83 0.160 0.190 D1 6.86 8.00 0.270 0.315 3 A1 0.00 0.254 0.000 0.010 E 9.65 10.67 0.380 0.420 2, 3 E1 7.90 8.80 0.311 0.346 3 b 0.51 0.99 0.020 0.039 b1 0.51 0.89 0.020 0.035 b2 1.14 1.78 0.045 0.070 b3 1.14 1.73 0.045 0.068 c 0.38 0.74 0.015 0.029 c1 0.38 0.58 0.015 0.023 c2 1.14 1.65 0.045 0.065 D 8.51 9.65 0.335 0.380 4 4 4 e 0.100 BSC H 14.61 15.88 0.575 0.625 L 1.78 2.79 0.070 0.110 L1 - 1.65 - 0.066 L2 1.27 1.78 0.050 0.070 L3 2 2.54 BSC L4 0.25 BSC 4.78 5.28 3 0.010 BSC 0.188 0.208 Notes (1) Dimensioning and tolerancing per ASME Y14.5 M-1994 (2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body (3) Thermal pad contour optional within dimension E, L1, D1 and E1 (4) Dimension b1 and c1 apply to base metal only (5) Datum A and B to be determined at datum plane H (6) Controlling dimension: inch (7) Outline conforms to JEDEC outline TO-263AB Document Number: 95046 Revision: 31-Mar-11 For technical questions within your region, please contact one of the following: www.vishay.com [email protected], [email protected], [email protected] 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1