AF9926N N-Channel Enhancement Mode Power MOSFET Features General Description - Capable of 2.5V Gate Drive - Low On-resistance - Low Drive Current - Surface Mount Package The advanced power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. Product Summary BVDSS (V) 20 RDS(ON) (mΩ) 30 ID (A) 6 Pin Descriptions Pin Assignments S1 1 8 D1 Pin Name Description G1 2 7 D1 S2 3 6 D2 S1/2 G1/2 D1/2 Source Gate Drain G2 4 5 D2 SO-8 Ordering information Feature F :MOSFET A X 9926N X X X PN Package Lead Free Packing S: SO-8 Blank : Normal L : Lead Free Package Blank : Tube or Bulk A : Tape & Reel This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of this product. No rights under any patent accompany the sale of the product. Rev. 1.1 Sep 5, 2005 1/6 AF9926N N-Channel Enhancement Mode Power MOSFET Absolute Maximum Ratings Symbol VDS VGS Parameter Drain-Source Voltage Gate-Source Voltage TA=25ºC TA=70ºC ID Continuous Drain Current (Note 1) IDM Pulsed Drain Current (Note 2) Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range PD TSTG TJ Rating 20 ±12 6 4.8 26 2 0.016 -55 to 150 -55 to 150 TA=25ºC Units V V A A W W/ºC ºC ºC Thermal Data Symbol Rthj-amb Parameter Thermal Resistance Junction-ambient (Note 1) Maximum 62.5 Max. Units ºC/W Electrical Characteristics at TJ=25ºC unless otherwise specified Symbol BVDSS ∆BVDSS / ∆TJ RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Static Drain-Source On-Resistance (Note 3) Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (TJ=25oC) Drain-Source Leakage Current (TJ=70oC) Gate-Source Forward Leakage Gate-Source Reverse Leakage Total Gate Charge (Note 3) Gate-Source Charge Gate-Drain (“Miller”) Charge Turn-On Delay Time (Note 3) Rise Time Turn-Off Delay Time Fall-Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions Min. Typ. Max. Units VGS=0V, ID=250uA Reference to 25oC, ID=1mA VGS=4.5V, ID=6A VGS=2.5V, ID=5.2A VDS=VGS, ID=250uA VDS=10V, ID=6A 20 - - V - 0.03 - V/oC - - - 20 30 45 1.2 - VDS=20V, VGS=0V - - 25 VDS=20V, VGS=0V - - 250 VGS=12V VGS=-12V ID=6A, VDS=20V, VGS=5V VDS=10V, ID=1A, RG=6Ω, VGS=5V RD=10Ω VGS=0V, VDS=20V, f=1.0MHz - 23 4.5 7 30 70 40 65 1035 320 150 100 -100 35 7 11 60 140 80 130 - Min. - Typ. - Max. 1.54 Unit V - 0.78 1.2 V mΩ V S uA nA nC ns pF Source-Drain Diode Symbol IS VSD Parameter Test Conditions Continuous Source Current (Body Diode) VD=VG=0V, VS=1.3V TJ=25ºC, IS=1.7A, Forward On Voltage (Note 3) VGS=0V 2 o Note 1: Surface mounted on 1 in copper pad of FR4 board, 135 C/W when mounted on Min. copper pad. Note 2: Pulse width limited by Max. junction temperature. Note 3: Pulse width ≤ 300us, duty cycle ≤ 2%. Anachip Corp. www.anachip.com.tw Rev. 1.1 Sep 5, 2005 2/6 AF9926N N-Channel Enhancement Mode Power MOSFET Typical Performance Characteristics Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. RDSON v.s. Junction Temperature Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Maximum Drain Current v.s. Case Temperature Fig 6. Typical Power Dissipation Anachip Corp. www.anachip.com.tw Rev. 1.1 Sep 5, 2005 3/6 AF9926N N-Channel Enhancement Mode Power MOSFET Typical Performance Characteristics (Continued) Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance Fig 9. Typical Gate Charge v.s. VGS Fig 10. Typical Capacitance v.s. VDS Fig 11. Forward Characteristic of Reverse Diode Fig 12. Gate Threshold Voltage v.s. Junction Temperature Anachip Corp. www.anachip.com.tw Rev. 1.1 Sep 5, 2005 4/6 AF9926N N-Channel Enhancement Mode Power MOSFET Typical Performance Characteristics (Continued) Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform Anachip Corp. www.anachip.com.tw Rev. 1.1 Sep 5, 2005 5/6 AF9926N N-Channel Enhancement Mode Power MOSFET Marking Information SO-8 ( Top View ) 8 Lot code: "X": Non-Lead Free; "X": Lead Free "A~Z": 01~26; "A~Z": 27~52 Logo 9926 N AA Y W X Part Number Week code: "A~Z": 01~26; "A~Z": 27~52 1 Year code: "4" =2004 ~ Factory code Package Information Package Type: SO-8 D 7 6 5 2 3 4 E1 E 8 1 L DETAIL A B C A1 A e θ DETAIL A 1. All Dimensions Are in Millimeters. 2. Dimension Does Not Include Mold Protrusions. Symbol A A1 B C D E E1 L θ e Dimensions In Millimeters Min. Nom. Max. 1.35 1.55 1.75 0.10 0.18 0.25 0.33 0.41 0.51 0.19 0.22 0.25 4.80 4.90 5.00 5.80 6.15 6.50 3.80 3.90 4.00 0.38 0.71 1.27 0o 4o 8o 1.27 TYP. Anachip Corp. www.anachip.com.tw Rev. 1.1 Sep 5, 2005 6/6