AF2302N 20V N-Channel Enhancement Mode MOSFET Features Product Summary - Advanced trench process technology - High density cell design for ultra low on-resistance - Excellent thermal and electrical capabilities - Compact and low profile SOT-23 package VDS = 20V RDS (on), [email protected], [email protected] =65mΩ. RDS (on), [email protected], [email protected] =95mΩ. Pin Descriptions Pin Assignments Pin No. 1 2 3 3 (Top View) 1 1. G 2. S 3. D 2 Pin Name G S D Description Gate Source Drain Ordering information Feature A X 2302N X X X PN Package Lead Free Packing W: SOT23 Blank : Normal L : Lead Free Package Blank : Tube or Bulk A : Tape & Reel F :MOSFET Block Diagram D S G This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of this product. No rights under any patent accompany the sale of the product. Rev. 1.1 Jul 20, 2004 1/4 AF2302N 20V N-Channel Enhancement Mode MOSFET Absolute Maximum Ratings (TA=25ºC unless otherwise noted) Symbol VDS VGS ID IDM PD TJ TJ, TSTG Parameter Rating 20 ±8 2.4 10 1.25 0.8 +150 -55 to +150 Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current TA=25ºC TA=70ºC Maximum Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range Units V V A A W ºC ºC Thermal Performance Symbol TL RθJA Parameter Lead Temperature (1/8” from case) Junction to Ambient Thermal Resistance (PCB mounted) Limit 5 100 Units S ºC/W Note: Surface mounted on FR4 board t < 5 sec. Electrical Characteristics Rate ID=2.4A, (TA=25oC unless otherwise noted) Symbol Static BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Drain-Source On-State Resistance VGS(TH) Gate Threshold Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate Body Leakage ID(ON) On-State Drain Current gfs Forward Tranconductance Dynamic Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall-Time Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Source-Drain Diode IS Max. Diode Forward Current VSD Diode Forward Voltage Test Conditions VGS=0V, ID=250uA VGS=4.5V, ID=3.6A VGS=2.5V, ID=3.1A VDS= VGS, ID=250uA VDS=20V, VGS=0V VGS=±8V, VDS=0V VDS=5V, VGS=4.5V VDS=5V, ID=3.6A VDS=10V, ID=3.6A, VGS=4.5V VDD=10V, RL=10Ω, ID=1A, VGEN=4.5V, RG=6Ω VDS=10V, VGS=0V, f=1.0MHz IS=1.0A, VGS=0V Min. Limits Typ. Max. 20 0.45 6 - 50 75 10 65 95 1.0 ±100 - - 5.2 0.65 1.5 7 55 16 10 450 70 43 10 15 80 60 25 - - 0.75 1.6 1.2 Unit V mΩ V uA nA A S nC nS pF A V Note: Pulse test: pulse width < 300uS, duty cycle < 2% Anachip Corp. www.anachip.com.tw Rev. 1.1 Jul 20, 2004 2/4 AF2302N 20V N-Channel Enhancement Mode MOSFET Marking Information Appendix Part Number AF2302N (Top View) SOT23 Package SOT23-3 Device Code 02 XX YW XX: Device Code (See Appendix) Date code Y : Year W : Week(A~Z) Switching Test Circuit VDD RD D VIN VGEN RG VOUT OUT G S Switching Waveforms ton td(on) toff tr td(off) tf 90% 90% 10% Output, VOUT 10% INVERTED 90% 50% 50% Input, VIN 10% PULSE WIDTH Anachip Corp. www.anachip.com.tw Rev. 1.1 Jul 20, 2004 3/4 AF2302N 20V N-Channel Enhancement Mode MOSFET HE E Package Information e A A1 A2 b C D E e HE L Dimensions In Millimeters Min. 1.00 0.00 1.00 0.35 0.10 2.70 1.40 1.70 2.40 0.30 Nom. 1.20 1.15 0.175 2.90 1.60 2.00 2.70 - L C A1 b Symbol A A2 D Max. 1.40 0.10 1.30 0.50 0.25 3.10 1.80 2.30 3.00 0.55 Anachip Corp. www.anachip.com.tw Dimensions In Inches Min. 0.039 0.000 0.039 0.014 0.004 0.106 0.055 0.067 0.094 0.012 Nom. 0.047 0.045 0.007 0.114 0.063 0.079 0.106 - Max. 0.055 0.004 0.051 0.020 0.010 0.122 0.071 0.091 0.118 0.022 Rev. 1.1 Jul 20, 2004 4/4