TN2404K/TN2404KL/BS107KL Vishay Siliconix N-Channel 240 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Part Number VDS (V) RDS(on) () VGS(th) (A) 240 4 at VGS = 10 V 0.8 to 2 ID (A) 0.2 TN2404K TN2404K, BS107KL • • • • • Qg (Typ.) 0.3 4.87 nC Low On-Resistance: 4 Secondary Breakdown Free: 260 V Low Power/Voltage Driven Low Input and Output Leakage Excellent Thermal Stability • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TO-226AA (TO-92) TO-92-18RM (TO-18 Lead Form) S 1 D 1 G 2 G 2 D S 3 APPLICATIONS 3 Top View TN2404KL Top View BS107KL Device Marking Front View Device Marking Front View “S” TN 2404KL xxyy “S” BS 107KL xxyy “S” = Siliconix Logo xxyy = Date Code TO-236 (SOT-23) • High-Voltage Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Transistors, etc. • Telephone Mute Switches, Ringer Circuits • Power Supply, Converters • Motor Control G 1 S 2 3 Top View TN2404K BENEFITS • • • • • “S” = Siliconix Logo xxyy = Date Code D Marking Code: K1ywl Low Offset Voltage K1 = Part Number Code for TN2404K y = Year Code Full-Voltage Operation w = Week Code Easily Driven Without Buffer l = Lot Traceability Low Error Voltage No High-Temperature “Run-Away” ORDRING INFORMATION Standard Partnumber Ordering Part Number Option TN2404K-T1-E3 Lead (Pb) free TN2404K-T1-GE3 Lead (Pb) free and Halogen free TN2404KL TN2404KL-TR1-E3 BS107KL BS107KL-TR1-E3 With Tape and Reel Spool Option TN2404K ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol TN2404K TN2404KL/BS107KL Drain-Source Voltage VDS 240 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TA = 25 °C TA = 70 °C ID IDM Pulsed Drain Current (t = 300 µs) TA = 25 °C Maximum Power Dissipation TA = 70 °C Thermal Resistance Junction-to-Ambient Operating Junction and Storage Temperature Range PD RthJA TJ, Tstg V 0.2 0.3 0.16 0.25 0.8 1.4 0.36 0.8 0.23 0.51 350b 156 - 55 to 150 Symbol A W °C/W °C Notes: a. Pulse width limited by maximum junction temperature. b. Surface mounted on an FR4 board. Document Number: 72225 S12-1767-Rev. C, 23-Jul-12 For technical questions, contact: [email protected] www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TN2404K/TN2404KL/BS107KL Vishay Siliconix SPECIFICATIONS (TA = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Limits a Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage VDS VGS = 0 V, ID = 100 µA 240 257 VGS(th) VDS = VGS, ID = 250 µA 0.8 1.65 IGSS VDS = 0 V, VGS = ± 20 V ± 100 VDS = 192 V, VGS = 0 V 1 VDS = 192 V, VGS = 0 V, TJ = 55 °C 10 Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltage VDS 10 V, VGS = 10 V 0.8 VDS 10 V, VGS = 4.5 V 0.5 2 nA µA A VGS 10 V, ID = 0.3 A 2.2 4 VGS 4.5 V, ID = 0.2 A 2.3 4 VGS 2.5 V, ID = 0.1 A 2.4 6 gfs VDS = 10 V, ID = 0.3 A 1.6 VSD VGS = 0 V, IS = 0.3 A 0.8 1.2 4.87 8 RDS(on) V S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 1.53 Turn-On Delay Time td(on) 5 10 12 20 35 60 16 25 Rise Time Turn-Off Delay Time Fall Time tr td(off) VDS = 192 V, VGS = 10 V, ID = 0.5 A VDD = 60 V, RL = 200 ID 0.3 A, VGEN = 10 V, Rg = 25 tf 0.56 nC ns Notes: a. Pulse test; pulse width 300 µs, duty cycle 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 For technical questions, contact: [email protected] Document Number: 72225 S12-1767-Rev. C, 23-Jul-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TN2404K/TN2404KL/BS107KL Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1.4 1.8 VGS = 10 thru 3 V 1.2 I D − Drain Current (A) I D − Drain Current (A) TC = −55 C 1.2 1.5 2.5 V 0.9 0.6 25 C 1.0 125 C 0.8 0.6 0.4 0.3 0.2 2V 0.0 0.0 0 1 2 3 4 0 5 1 VDS − Drain-to-Source Voltage (V) 2 3 4 5 VGS − Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 300 250 4 3 C − Capacitance (pF) R DS(on) − On-Resistance ( ) 5 VGS = 4.5 V VGS = 10 V 2 200 Ciss 150 100 1 50 0 0.0 Crss Coss 0 0.2 0.4 0.6 0.8 1.0 1.2 0 10 ID − Drain Current (A) 20 30 40 50 VDS − Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 2.2 10 VDS = 192 V ID = 0.5 A R DS(on) − On-Resiistance (Normalized) V GS − Gate-to-Source Voltage (V) 6 8 6 4 2 0 0 1 2 3 4 5 VGS = 10 V ID = 0.3 A 2.0 1.8 1.6 1.4 VGS = 4.5 V ID = 0.2 A 1.2 1.0 0.8 0.6 0.4 −50 Qg − Total Gate Charge (nC) 0 25 50 75 100 TJ − Junction Temperature ( C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 72225 S12-1767-Rev. C, 23-Jul-12 −25 For technical questions, contact: [email protected] 125 150 www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TN2404K/TN2404KL/BS107KL Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 8 10 ID = 100 mA 1 0.1 R DS(on) − On-Resistance ( I S − Source Current (A) ) 7 TJ = −55 C TJ = 25 C 0.01 TJ = 150 C 0.001 0.0 0.2 6 ID = 50 mA 5 4 3 2 ID = 10 mA 1 0.4 0.6 0.8 1.0 1.2 VSD − Source-to-Drain Voltage (V) 0 1.4 0 Source-Drain Diode Forward Voltage 2 4 6 8 VGS − Gate-to-Source Voltage (V) 10 On-Resistance vs. Gate-to-Source Voltage 0.3 0.2 ID = 250 µA V GS(th) Variance (V) 0.1 −0.0 −0.1 −0.2 −0.3 −0.4 −0.5 −50 −25 0 25 50 75 100 TJ − Temperature (°C) 125 150 Threshold Voltage www.vishay.com 4 For technical questions, contact: [email protected] Document Number: 72225 S12-1767-Rev. C, 23-Jul-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TN2404K/TN2404KL/BS107KL Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA =350 C/W 3. TJM − TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10−4 10−3 10−2 10−1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient (TO-236, TN2404K only) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 Notes: 0.05 PDM t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 156 C/W 0.01 3. TJM − TA = PDMZthJA(t) Single Pulse 0.01 0.1 1 10 100 1K 10 K t1 − Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient (TO-226AA, TN2404KL and TO-92-18RM, BS107KL only) Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72225. Document Number: 72225 S12-1767-Rev. C, 23-Jul-12 For technical questions, contact: [email protected] www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix SOT-23 (TO-236): 3-LEAD b 3 E1 1 E 2 e S e1 D 0.10 mm C 0.004" A2 A C q Gauge Plane Seating Plane Seating Plane C A1 Dim 0.25 mm L L1 MILLIMETERS Min INCHES Max Min Max 0.044 A 0.89 1.12 0.035 A1 0.01 0.10 0.0004 0.004 A2 0.88 1.02 0.0346 0.040 b 0.35 0.50 0.014 0.020 c 0.085 0.18 0.003 0.007 D 2.80 3.04 0.110 0.120 E 2.10 2.64 0.083 0.104 E1 1.20 1.40 0.047 e 0.95 BSC e1 L 1.90 BSC 0.40 L1 q 0.0748 Ref 0.60 0.016 0.64 Ref S 0.024 0.025 Ref 0.50 Ref 3° 0.055 0.0374 Ref 0.020 Ref 8° 3° 8° ECN: S-03946-Rev. K, 09-Jul-01 DWG: 5479 Document Number: 71196 09-Jul-01 www.vishay.com 1 AN807 Vishay Siliconix Mounting LITTLE FOOTR SOT-23 Power MOSFETs Wharton McDaniel Surface-mounted LITTLE FOOT power MOSFETs use integrated circuit and small-signal packages which have been been modified to provide the heat transfer capabilities required by power devices. Leadframe materials and design, molding compounds, and die attach materials have been changed, while the footprint of the packages remains the same. See Application Note 826, Recommended Minimum Pad Patterns With Outline Drawing Access for Vishay Siliconix MOSFETs, (http://www.vishay.com/doc?72286), for the basis of the pad design for a LITTLE FOOT SOT-23 power MOSFET footprint . In converting this footprint to the pad set for a power device, designers must make two connections: an electrical connection and a thermal connection, to draw heat away from the package. ambient air. This pattern uses all the available area underneath the body for this purpose. 0.114 2.9 0.081 2.05 0.150 3.8 0.059 1.5 0.0394 1.0 0.037 0.95 FIGURE 1. Footprint With Copper Spreading The electrical connections for the SOT-23 are very simple. Pin 1 is the gate, pin 2 is the source, and pin 3 is the drain. As in the other LITTLE FOOT packages, the drain pin serves the additional function of providing the thermal connection from the package to the PC board. The total cross section of a copper trace connected to the drain may be adequate to carry the current required for the application, but it may be inadequate thermally. Also, heat spreads in a circular fashion from the heat source. In this case the drain pin is the heat source when looking at heat spread on the PC board. Figure 1 shows the footprint with copper spreading for the SOT-23 package. This pattern shows the starting point for utilizing the board area available for the heat spreading copper. To create this pattern, a plane of copper overlies the drain pin and provides planar copper to draw heat from the drain lead and start the process of spreading the heat so it can be dissipated into the Document Number: 70739 26-Nov-03 Since surface-mounted packages are small, and reflow soldering is the most common way in which these are affixed to the PC board, “thermal” connections from the planar copper to the pads have not been used. Even if additional planar copper area is used, there should be no problems in the soldering process. The actual solder connections are defined by the solder mask openings. By combining the basic footprint with the copper plane on the drain pins, the solder mask generation occurs automatically. A final item to keep in mind is the width of the power traces. The absolute minimum power trace width must be determined by the amount of current it has to carry. For thermal reasons, this minimum width should be at least 0.020 inches. The use of wide traces connected to the drain plane provides a low-impedance path for heat to move away from the device. www.vishay.com 1 Application Note 826 Vishay Siliconix 0.049 (1.245) 0.029 0.022 (0.559) (0.724) 0.037 (0.950) (2.692) 0.106 RECOMMENDED MINIMUM PADS FOR SOT-23 0.053 (1.341) 0.097 (2.459) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72609 Revision: 21-Jan-08 www.vishay.com 25 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000