Advance Product Information September 19, 2005 DC - 12 GHz Discrete power pHEMT TGF2021-08 Key Features and Performance • • • • • • • Frequency Range: DC - 12 GHz > 39 dBm Nominal Psat 59% Maximum PAE 11 dB Nominal Power Gain Suitable for high reliability applications 8mm x 0.35 m Power pHEMT Nominal Bias Vd = 8-12V, Idq = 600-1000mA (Under RF Drive, Id rises from 600mA to 1920mA) Chip Dimensions: 0.57 x 2.42 x 0.10 mm (0.022 x 0.095 x 0.004 in) • Product Description Primary Applications The TriQuint TGF2021-08 is a discrete 8mm pHEMT which operates from DC-12 GHz. The TGF2021-08 is designed using TriQuint’s proven standard 0.35um power pHEMT production process. • • • • • The TGF2021-08 is also ideally suited for Point-to-point Radio, High-reliability space, and Military applications. 35 30 Maximum Gain (dB) The TGF2021-08 typically provides > 39 dBm of saturated output power with power gain of 11 dB. The maximum power added efficiency is 59% which makes the TGF2021-08 appropriate for high efficiency applications. Point-to-point Radio High-reliability space Military Base Stations Broadband Wireless Applications 25 MSG 20 MAG 15 10 5 0 The TGF2021-08 has a protective surface passivation layer providing environmental robustness. 0 2 4 6 8 10 12 14 16 Frequency (GHz) Lead-free and RoHS compliant Note: This device is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to change without notice. TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com 1 Advance Product Information September 19, 2005 TGF2021-08 TABLE I MAXIMUM RATINGS Symbol V+ Parameter 1/ Positive Supply Voltage - Value Notes 12.5 V 2/ V Negative Supply Voltage Range I+ Positive Supply Current 3.8 A | IG | Gate Supply Current 56 mA PIN Input Continuous Wave Power 34 dBm 2/ PD Power Dissipation See note 3 2/ 3/ TCH Operating Channel Temperature 150 °C 4/ TM Mounting Temperature (30 Seconds) 320 °C TSTG -5V to 0V 2/ -65 to 150 °C Storage Temperature 1/ These ratings represent the maximum operable values for this device. 2/ Combinations of supply voltage, supply current, input power, and output power shall not exceed PD. 3/ 4/ For a median life time of 1E+6 hrs, Power dissipation is limited to: PD(max) = (150 °C – TBASE °C) / 10.8 (°C/W) Junction operating temperature will directly affect the device median time to failure (TM). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. TABLE II DC PROBE CHARACTERISTICS (TA = 25 qC, Nominal) Symbol Parameter Minimum Typical Maximum Unit Idss Saturated Drain Current - 2400 - mA Gm Transconductance - 3000 - mS VP Pinch-off Voltage -1.5 -1 -0.5 V VBGS Breakdown Voltage Gate-Source Breakdown Voltage Gate-Drain -30 - -14 V -30 - -14 V VBGD Note: For TriQuint’s 0.35um power pHEMT devices, RF breakdown >> DC breakdown TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com 2 Advance Product Information September 19, 2005 TABLE III RF CHARACTERIZATION TABLE 1/ TGF2021-08 (T A = 25 °C, Nominal) PARAMETER Vd = 10V Idq = 600mA Vd = 12V Idq = 600mA UNITS Psat Saturated Output Power 39.8 40.5 dBm PAE Power Added Efficiency 50 48 % Gain Power Gain 11 11 dB Rp 2/ Parallel Resistance 3.33 3.99 Ω Cp 2/ Parallel Capacitance 3.705 3.811 pF Γ L 3/, 4/ Efficiency Tuned: Load Reflection coefficient 0.920 ∠ 176.3 0.920 ∠ 175.4 - Psat Saturated Output Power 39 39.7 dBm PAE Power Added Efficiency 59 55 % Gain Power Gain 11.5 11 dB Rp 2/ Parallel Resistance 6.13 6.95 Ω Cp 2/ Parallel Capacitance 4.308 4.042 pF Γ L 3/, 4/ Load Reflection coefficient 0.937 ∠ 173.8 0.935 ∠ 173.2 - SYMBOL Power Tuned: 1/ Values in this table are scaled from measurements taken from a 1mm unit pHEMT cell at 10 GHz 2/ Large signal equivalent pHEMT output network 3/ Optimum load impedance for maximum power or maximum PAE at 10 GHz 4 The reflection coefficients for this device have been calculated from the scaled large signal Rp & Cp. The series resistance and inductance (Rd and Ld) shown in the Figure on page 4 is excluded TABLE IV THERMAL INFORMATION Test Conditions Parameter θJC Thermal Resistance Vd = 12 V (channel to backside of carrier) Idq = 600 mA Pdiss = 7.2 W TCH (oC) TJC (qC/W) TM (HRS) 148 10.8 1.2 E+6 Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo Carrier at 70°C baseplate temperature. TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com 3 Advance Product Information September 19, 2005 TGF2021-08 Linear Model for 1mm Unit pHEMT cell Rdg Lg Rg Cdg Rd Ld Gate Drain Cgs + vi Rgs Ri Rds Cds gm vi - 8QLWS+(07FHOO 5HIHUHQFH3ODQH Rp, Cp Ls Rs Source Gate Source Drain UPC Source Source UPC = 1mm Unit pHEMT Cell MODEL PARAMETER Vd = 8V Idq = 75mA Vd = 8V Idq = 100mA Vd = 8V Idq = 125mA Vd = 10V Idq = 75mA Vd = 10V Idq = 100mA Vd = 12V Idq = 75mA UNITS Rg 0.45 0.45 0.45 0.45 0.450 0.45 Ω Rs 0.14 0.14 0.14 0.17 0.160 0.19 Ω Rd 0.41 0.43 0.46 0.41 0.450 0.410 Ω gm 0.310 0.318 0.314 0.296 0.303 0.286 S Cgs 2.39 2.58 2.70 2.61 2.74 2.72 pF 1.22 1.19 1.20 1.24 1.23 1.27 Ω Cds 0.20 0.201 0.201 0.198 0.199 0.196 pF Rds 149.1 152.3 158.8 171.8 173.7 187.9 Ω Cgd 0.115 0.107 0.101 0.101 0.098 0.096 pF Tau 6.29 6.63 6.99 7.19 7.410 7.79 pS 0.009 0.009 0.009 0.009 0.010 0.010 nH Lg 0.089 0.089 0.089 0.089 0.089 0.089 Ld 0.120 0.120 0.120 0.120 0.120 0.120 Rgs 33000 33000 35100 28900 35700 24400 Ω Rgd 349000 425000 405000 305000 366000 238000 Ω Ri Ls nH nH TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com 4 Advance Product Information September 19, 2005 TGF2021-08 Linear Model for 8mm pHEMT L - via = 0.0135 nH (9x) 8 7 6 UPC UPC UPC 9 10 11 Drain Pads (8x) Gate Pads (8x) 5 4 UPC UPC 12 13 3 UPC 14 2 UPC 15 1 UPC 16 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com 5 Advance Product Information September 19, 2005 TGF2021-08 Unmatched S-parameter for 8mm pHEMT Bias Conditions: Vd=12V, Idq=600mA Frequency s11 s11 ang s21 s21 ang s12 s12 ang s22 s22 ang (GHz) dB deg dB deg dB deg dB deg 0.5 -0.219 -165.41 19.074 93.88 -39.703 6.63 -2.938 -175.24 1 -0.218 -172.72 13.085 86.79 -39.685 2.29 -2.874 -176.34 1.5 -0.216 -175.20 9.538 82.14 -39.733 0.41 -2.829 -176.18 2 -0.215 -176.46 6.995 78.13 -39.810 -0.81 -2.776 -175.74 2.5 -0.213 -177.22 4.997 74.41 -39.911 -1.72 -2.713 -175.22 3 -0.210 -177.75 3.340 70.85 -40.033 -2.43 -2.641 -174.70 3.5 -0.207 -178.14 1.917 67.41 -40.175 -2.98 -2.561 -174.21 4 -0.204 -178.44 0.662 64.08 -40.335 -3.39 -2.475 -173.77 4.5 -0.201 -178.69 -0.466 60.84 -40.512 -3.65 -2.384 -173.39 5 -0.197 -178.90 -1.494 57.69 -40.703 -3.77 -2.290 -173.06 5.5 -0.194 -179.08 -2.443 54.62 -40.907 -3.73 -2.196 -172.80 6 -0.190 -179.25 -3.326 51.64 -41.121 -3.54 -2.101 -172.60 6.5 -0.187 -179.39 -4.154 48.74 -41.344 -3.19 -2.007 -172.45 7 -0.183 -179.53 -4.935 45.92 -41.574 -2.67 -1.914 -172.36 7.5 -0.179 -179.66 -5.676 43.18 -41.807 -1.99 -1.824 -172.31 8 -0.175 -179.78 -6.382 40.52 -42.041 -1.13 -1.737 -172.31 8.5 -0.172 -179.89 -7.055 37.94 -42.275 -0.11 -1.653 -172.34 9 -0.168 180.00 -7.701 35.44 -42.504 1.08 -1.573 -172.40 9.5 -0.165 179.89 -8.321 33.01 -42.727 2.43 -1.497 -172.50 10 -0.162 179.79 -8.917 30.65 -42.943 3.95 -1.424 -172.62 10.5 -0.159 179.68 -9.492 28.36 -43.148 5.62 -1.354 -172.76 11 -0.155 179.58 -10.047 26.14 -43.342 7.45 -1.289 -172.92 11.5 -0.153 179.49 -10.583 23.98 -43.522 9.43 -1.226 -173.09 12 -0.150 179.39 -11.103 21.88 -43.683 11.58 -1.168 -173.28 12.5 -0.147 179.30 -11.606 19.85 -43.822 13.87 -1.112 -173.47 13 -0.144 179.20 -12.094 17.87 -43.933 16.28 -1.060 -173.68 13.5 -0.142 179.11 -12.569 15.94 -44.015 18.79 -1.010 -173.90 14 -0.139 179.02 -13.029 14.07 -44.066 21.36 -0.964 -174.12 14.5 -0.137 178.93 -13.477 12.25 -44.085 23.96 -0.920 -174.34 15 -0.135 178.84 -13.913 10.48 -44.074 26.55 -0.878 -174.57 15.5 -0.133 178.75 -14.338 8.75 -44.033 29.12 -0.839 -174.80 16 -0.131 178.66 -14.752 7.06 -43.965 31.64 -0.803 -175.03 16.5 -0.129 178.58 -15.156 5.42 -43.871 34.10 -0.768 -175.26 17 -0.128 178.49 -15.551 3.81 -43.755 36.47 -0.735 -175.49 17.5 -0.126 178.40 -15.936 2.25 -43.619 38.75 -0.704 -175.73 18 -0.124 178.32 -16.314 0.72 -43.465 40.93 -0.674 -175.96 18.5 -0.123 178.23 -16.683 -0.78 -43.296 43.00 -0.647 -176.19 19 -0.122 178.15 -17.044 -2.24 -43.114 44.96 -0.620 -176.42 19.5 -0.120 178.06 -17.398 -3.67 -42.922 46.81 -0.595 -176.65 20 -0.119 177.98 -17.746 -5.08 -42.721 48.56 -0.572 -176.88 20.5 -0.118 177.90 -18.087 -6.45 -42.512 50.19 -0.549 -177.10 21 -0.117 177.82 -18.422 -7.80 -42.299 51.72 -0.528 -177.33 21.5 -0.116 177.73 -18.751 -9.12 -42.082 53.15 -0.508 -177.55 22 -0.115 177.65 -19.076 -10.41 -41.862 54.48 -0.489 -177.77 22.5 -0.114 177.57 -19.395 -11.69 -41.640 55.71 -0.470 -177.99 23 -0.113 177.49 -19.709 -12.94 -41.418 56.86 -0.453 -178.20 23.5 -0.112 177.41 -20.020 -14.17 -41.196 57.91 -0.436 -178.42 24 -0.111 177.33 -20.326 -15.38 -40.975 58.88 -0.421 -178.63 24.5 -0.110 177.25 -20.628 -16.57 -40.755 59.77 -0.406 -178.84 25 -0.110 177.17 -20.927 -17.74 -40.539 60.58 -0.391 -179.05 25.5 -0.109 177.09 -21.222 -18.90 -40.327 61.31 -0.377 -179.25 26 -0.109 177.01 -21.515 -20.04 -40.121 61.98 -0.364 -179.46 Note: The s-parameters are calculated by connecting nodes 1-8 together, and nodes 9-16 together to form a 2-port network. TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com 6 Advance Product Information September 19, 2005 TGF2021-08 Mechanical Drawing @ > >@ >@ *$7( >@ >@ >@ >@ >@ >@ >@ >@ >@ >@ '5$,1 >@ >@ @ @ > > @ @ @ > > > 8QLWVPLOOLPHWHUVLQFKHV 7KLFNQHVV &KLSHGJHWRERQGSDGGLPHQVLRQVDUHVKRZQWRFHQWHURIERQGSDG &KLSVL]HWROHUDQFH *1',6%$&.6,'(2)00,& %RQGSDGV*DWH[[ %RQGSDGV'UDLQ[[ %RQGSDG9J[[ %RQGSDG9J[[ 1RWH%RQGSDGVDUHDOWHUQDWHJDWHSDGV WKDWFDQEHXVHGIRUSDUDOOHOLQJ)(7V GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handing, assembly and test. TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com 7 Advance Product Information September 19, 2005 TGF2021-08 Assembly Process Notes Reflow process assembly notes: • • • • • Use AuSn (80/20) solder with limited exposure to temperatures at or above 300 °C for 30 sec An alloy station or conveyor furnace with reducing atmosphere should be used. Do not use flux Coefficient of thermal expansion matching is critical for long-term reliability. Devices must be stored in a dry nitrogen atmosphere. Component placement and adhesive attachment assembly notes: • • • • • • • Vacuum pencils and/or vacuum collets are the preferred method of pick up. Air bridges must be avoided during placement. The force impact is critical during auto placement. Organic attachment can be used in low-power applications. Curing should be done in a convection oven; proper exhaust is a safety concern. Microwave or radiant curing should not be used because of differential heating. Coefficient of thermal expansion matching is critical. Interconnect process assembly notes: • • • • • Thermosonic ball bonding is the preferred interconnect technique. Force, time, and ultrasonics are critical parameters. Aluminum wire should not be used. Devices with small pad sizes should be bonded with 0.0007-inch wire. Maximum stage temperature is 200 °C. TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com 8