an AMP comoanv Wireless Bipolar Power Transistor, 1.78 - 1.90 GHz 4W PH1819-4N v2.00 Features ,975 .‘24 77, NPN Silicon Microwave Power Transistor Designed for Linear Amplifier Applications Class AB: -34 dBc Typ 3rd IMD at 4 Watts PEP Class A: +44 dBm Typ 3rd Order Intercept Point Common Emitter Configuration Internal Input Impedance Matching Diffused Emitter Ballasting Gold Metallization System i . Absolute Maximum Ratings at 25°C Symbol Rating Units Collector-Base Voltage Vcm 60 V Collector-EmitterVoltage VCES 60 V Emitter-Base Voltage VES0 3.0 V ‘c 0.7 A Parameter Collector Current _ ,253~.DlO , c&43*.25) .0045? 1 PO W TJ 200 “C Storage Temperature TST0 -55 to +150 “C Thermal Resistance eJC 7.5 “C/W Electrical Characteristics at 25°C JunctionTemperature Parameter Collector-Emitter Breakdown Voltage 1 I ’ I UN-ESS OTHERWlSE --A-; ,110 :2.79> t ND-ED, TOLERANZES ARE INCt-3 t COY :M1, L,HETERS i . =,13MM) Test Conditions Min Max Units BV,,, 60 - V I,=5 mA 2.0 mA V,,=24 V ICES ; +’ Symbol Collector-Emitter Leakage Current 1 ; , 19.5 Power Dissipation J I;;;;:;;) OOl:, Collector-Emitter Breakdown Voltage BVcEo 20 - V I,=5 mA Emitter-Base Breakdown Voltage BV,,, 3.0 - V 1,=2.5 mA V,,=5 V, I,=O.l A DC Forward Current Gain hFE 15 120 - Power Gain GP 10 - dB V,:=26 V, I,,-,=20mA, PO,,.=4W PEP, F=1850 MHz, AF=lOO kHz Collector Efficiency % 25 - % V&6 Input Return Loss RL 10 - dB V,,t26 V, I,,=20 mA, Poe4 VSWR-T - 1O:l - V,,=26 V, l,c=20 mA, POUT=4 W PEP, F=1850 MHz, AF=l 00 kHz IMD, - -30 dBc V,,=26 V, I,,=20 mA, PO,=4 W PEP, F=1850 MHz, AF=~ 00 kHz Load MismatchTolerance 3rd Order IMD V, l,c=20 mA, Po,,r=4 W PEP, F=1850 MHz, AF=lOO kHz W PEP, Ft1850 MHz, AF=lOO kHz Typical Optimum Device Impedances I I F(MHz) 1780 q(Q) I LAO(Q) 3.5+i9.3 3.5+j5.6 I 1850 3.1 + j9.2 4.5 + j5.2 1900 3.3 + jS.9 4.8 + j5.5 Specifications Subject to Change ( Without Notice. 9-l 83 M/A-COM, Inc. North America: Tel. (800) 366-2266 Fax (800) 618-8883 m Asia/Pacific: Tel. +81 (03) 3226-1671 Fax +81 (03) 3226-1451 n Europe: Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020 Wireless Bipolar Power Transistor, PH1819-4N 4W v2.00 RF Test Fixture "CC Q GD ? OUTPUT 50 OHMS ARTWORK DIMENSIONS c3 BOARD TYPE: Specifications MILS i-IS-!- t=tQR-i-S Cl c2 c4 c5 CR1 Ll Rl RLl Ql IN 33 pF ATC SIZE A 5000 pF CHIP 50 UF 50 VOLTS lN4245 DIODE 5 TURNS OF NO, 20 407 OHMS l/4 WATT 7 TURNS CIF Nil, 24 PH1819-4N ROGERS 6010,S ,025” AWG ON ,160” AWG ON 3 OHM l/4 THICK, ER = DIA 10.5 Subject to Change Without Notice. M/A-COM, 9-184 North America: Tel. (800) 366-2266 Fax (800) 618-8883 m Asia/Pacific: WATT Tel. +81 (03) 3226-1671 Fax +81 (03) 3226-1451 l Europe: Inc. Tel. +I4 (1344) 869 595 Fax +44 (1344) 300 020 Wireless Bipolar Power Transistor, 4W PHI 819-4N v2.00 Typical Broadband Performance GAIN-EFFICIENCY P,,,=4.0 Curves OUTPUT vs FREQUENCY W PEP V&6 V I,,=20 mA I,,=20 POWER vs COLLECTOR mA F1=1850.0 VOLTAGE MHz F2~1850.1 MHz 6 Efficiency P,,=O.l w 1780 1850 FREOUENCY 12 1900 34 18 16 (MHz) 20 COLLECTOR GAIN vs P VOLTAGE 22 24 26 (V) IMD vs PoUT F1=1850.0 MHz F2=f%O. V,,=26 -15 - 1 MHz ,I V I,,=50 mA Fld850.0 MHz F2=1850.1 MHz 1.8 Class A6 I,=300 14 mA. 22.0 V . -30 . a I 3rd % 27 - 0.9 E -60 L Y 23 31 27 35 3s 23 - 0 27 P&PEP) Pour (dBm) IMD vs P,, V,,=26 V I,,=20 mA Fl rl850.0 31 35 39 in dBm IMD vs POUT MHz F2=1850.1 MHz Vc,=22 -15 V Ico=300mA F1=1850.0 MHz F2=1850.1 MHz 1.8 class As 0.9 Class I A 0.6 K % 0.3 27 23 31 P&PEP) Specifications MIA-COM, 35 39 23 27 31 in dBm P,,(PEP) 35 Subject to Change Without Notice. 9-l 85 Inc. North America: 39 in dBm Tel. (800) 366-2266 Fax (800) 618-8883 = Asia/Pacific: Tel. +81 (03) 3226-1671 Fax +81 (03) 3226-1451 n Europe: Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020