MA-COM PH2226-110M

Radar Pulsed Power Transistor, 110 Watts,
2.25-2.55 GHz, 100 µS Pulse, 10% Duty
8/21/02
PH2226-110M
Rev. 3
Features
Q
Q
Q
Q
Q
Q
Q
Outline Drawing
NPN Silicon Microwave Power Transistor
Common Base Configuration
Broadband Class C Operation
Diffused Emitter Ballasting Resistors
Gold Metalization System
Internal Input and Output Impedance Matching
Hermetic Metal/Ceramic Package
Absolute Maximum Ratings at 25 °C
Parameter
Symbol
Rating
Units
Collector-Emitter Voltage
VCES
63
V
Emitter-Base Voltage
VEBO
3.0
V
Collector Current (Peak)
IC
15
A
Total Power Dissipation
@ +45 °C
PTOT
583
W
Storage Temperature
TSTG
-65 to +200
°C
Junction Temperature
Tj
200
°C
Electrical Characteristics at 25 °C
Parameter
Symbol
Min.
Max.
Units
Collector-Emitter Breakdown
Voltage
BVCES
63
-
V
IC=40 mA
ICES
-
7.5
mA
VCE=36 V
RTH(JC)
-
0.3
°C/W
VCC=36 V, PIN = 20 W, Freq= 2.25 and 2.55 GHz
Output Power
PO
110
-
W
VCC=36 V, PIN = 20 W, Freq= 2.25 and 2.55 GHz
Power Gain
GP
7.4
-
dB
VCC=36 V, PIN = 20 W, Freq= 2.25 and 2.55 GHz
Collector Efficiency
η
40
-
%
VCC=36 V, PIN = 20 W, Freq= 2.25 and 2.55 GHz
Input Return Loss
RL
9
-
dB
VCC=36 V, PIN = 20 W, Freq= 2.25 and 2.55 GHz
Load Mismatch Tolerance
VSWR-T
-
3:1
-
VCC=36 V, PIN = 20 W, Freq= 2.25 and 2.55 GHz
Load Mismatch Stability
VSWR-S
-
1.5:1
-
VCC=36 V, PIN = 20 W, Freq= 2.25 and 2.55 GHz
Collector-Emitter Leakage
Current
Thermal Resistance
Test Conditions
Radar Pulsed Power Transistor, 110 Watts, 2.25-2.55 GHz, 100µs Pulse, 10% Duty
PH2226-110M
8/21/02
Rev. 3
Broadband Test Fixture Impedances
TEST FIXTURE
INPUT
CIRCUIT
50Ω
Z IF
TEST FIXTURE
OUTPUT
CIRCUIT
Z OF
50Ω
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or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
F (GHz)
Z IF (Ω)
Z OF (Ω)
2.25
2.8 –j3.4
4.1 –j2.9
2.40
2.9 –j3.0
3.8 –j2.9
2.55
3.1 –j2.6
3.3 –j2.7
2
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