* z-,-3 y--z =: .---------= z =z = an AMP company Wireless Bipolar Power Transistor, 1450 - 1550 MHz 60W PHI516160 Features Designed for Linear Amplifier Applications Class AB: -30 dBc Typ 3rd IMD at 60 Watts PEP Class A: +53 dBm Typ 3rd Order Intercept Point Common Emitter Configuration Internal Input Impedance Marching Diffused Emitter Ballasting ‘f .22st.010 C5.72t.25) f / .^^ Absolute Maximum Ratings at 25°C Symbol Rating Units Collector-Base Voltage Vcm 65 V Collector-Emitter Voltage VCES 65 V Emitter-Base Voltage VEm 3.0 V CollectorCurrent 1, 10 Power Dissipation P, JunctionTemperature Storage Temperature Parameter Thermal Resistance ( ] A 116 W T, 200 “C T srt -55 to +150 “C 1.5 “CIW 8JC Electrical Characteristics UNLESS OTHERWISE NOTED, TOLERANCES ARE INCHES t.005 <,,,ILUnETERS r,13M,,,> at 25°C Typical Optimum Device Impedances F(MHr) Z,(Q) 1450 2.2 + j5.0 1500 2.7+j4.5 1550 2.1 + j3.7 Specifications M/A-COM, Subject to Change Without Notice. 9-157 inc. North America: Tel. (800) 366-2266 Fax (800) 618-8883 n Asia/Pacific: Tel. +81 (03) 3226-1671 Fax +81 (03) 3226-1451 n Europe: Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020 PH1516-60 Wireless Bipolar Power Transistor, 60W RF Test Fixture “cc vB GD CR1 DUTPUT 50 OHMS INPUT 50 OHMS ARTWORK Cl c2 c3 c4 C5 C6 ATC SIZE IN MILS B CAPACITOR 5OOOpF CHIP CAPACITOR 50 VOLT 5OuF ELECTROLYTIC lN5417 7 TURNS CR1 Ll Ql Specifications 18pF DIMENSIONS PH1516-60 4.7 OHM CAPACITOR DIODE OF l/2 Nil. 22 AWG CIN ,125'DIA WATT RESISTOR Rl RLl 10 TURNS BUARD TYPE: l/4 WATT RESISTOR ROGERS 601Os5 ,025"THICK,ER OF ND 26 AWG IIN 3 Subject to Change Without Notice. Tel. (800) 366-2266 Fax (800) 618-8883 m Asia/Pacific: = 10.5 WA-COM, 9-l 58 North America: OHM Tel. +81 (03) 3226-1671 Fax +81 (03) 3226-1451 = Europe: Inc. Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020 Wireless Bipolar Power Transistor, PH1516-60 60W v2.00 Typical Broadband Performance GAIN-EFFICIENCY P,,=60 11 Curves OUTPUT vs FREQUENCY W PEP I’,,=26 V I,,=25 mA - loo 90 75 . 60 Gain POWER vs COLLECTOR VOLTAGE 1,,=25mA F1=1500.0MHz F2=1500.1 MHz - 60 - 60 2 CW Efficiency .40-2 $? z a ,r +45 s - 30 Tone Efficiency 7 - - 20 15 0 0 6 - . s 1450 1500 FREQUENCY UMIIY 1550 12 14 16 18 20 COLLECTOR (MHz) 22 24 26 28 VOLTAGE (V) IMD vs P,, vs rouT F1=1500.0 MHz F2=1500.1 MHz Vcc=26 V I,,=25 mA l500.0MHz Fl=lSOO.l MHz -15 3.5 A 9 MessAB I 6 J 4' 30. 34 38 P,, 42 46 50 20 34 42 38 P,,PEPin VW 46 50 dBm IMD vs P,, IMD vs P,, F1=1500.0 MHz F2=1500.1 MHz V,,=20 V 1,,=3.5 A F1=1500.0 MHz F2=1500.1 MHZ Vcc=26 V 1,,=200 mA Class A 3rd 30 34 PaPEP in dBm2 46 50 30 33 %P,,PEP~B dBm 42 45 48 Specifications Subject to Change Without Notice. M/A-COM, 9-I 59 inc. North America: Tel. (800) 366-2266 Fax (800) 618-8883 m Asia/Pacific: Tel. +81 (03) 3226-1671 Fax +81 (03) 3226-1451 Europe: Tel. +44 (1344) 869 595 Fax +I4 (1344) 300 020