VISHAY BAT54-02V-V-G

BAT54-02V-V-G
Vishay Semiconductors
Small Signal Schottky Diode
Features
• This diode features very low turn-on
voltage and fast switching
• This device is protected by a PN junction
guard ring against excessive voltage,
such as electrostatic discharges
• Space saving SOD-523 package
• Compliant to RoHS Directive 2002/95/EC
and in accordance to WEEE 2002/96/EC
2
1
19344
22321
Mechanical Data
Case: SOD-523
Weight: approx. 1.4 mg
Molding compound flammability rating:
UL 94 V-0
Terminals: high temperature soldering guaranteed:
260 °C/4 x 10 s at terminals
Packaging codes/options:
18/3K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
Parts Table
Part
BAT54-02V-V-G
Ordering code
Type marking
Remarks
BAT54-02V-V-G-18 or BAT54-02V-V-G-08
.V
Tape and reel
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Repetitive peak reverse voltage
= working peak reverse voltage
Symbol
Value
Unit
VRRM
30
V
IF
200
mA
Repetitive peak forward current
IFRM
300
mA
Surge forward current
IFSM
600
mA
Power dissipation
Ptot
150
mW
Symbol
Value
Unit
RthJA
680
K/W
Tj
125
°C
Tstg
- 65 to + 150
°C
Forward continuous current
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Thermal resistance junction to ambient air
Junction temperature
Storage temperature range
Test condition
** Please see document “Vishay Material Category Policy”: www.vishay.com/doc?99902
Document Number 82394
Rev. 1.0, 14-Oct-10
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
1
BAT54-02V-V-G
Vishay Semiconductors
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Reverse breakdown voltage
Test condition
Symbol
Min.
100 µA pulses
V(BR)
30
Pulse test tp < 300 µs,
δ < 2 % at VR = 25 V
Leakage current
Forward voltage
Diode capacitance
Reverse recovery time
Typ.
Max.
Unit
V
2
µA
IF = 0.1 mA, tp < 300 µs, δ < 2 %
VF
240
mV
IF = 1 mA, tp < 300 µs, δ < 2 %
VF
320
mV
IF = 10 mA, tp < 300 µs, δ < 2 %
VF
400
mV
IF = 30 mA, tp < 300 µs, δ < 2 %
VF
500
mV
IF = 100 mA, tp < 300 µs, δ < 2 %
VF
800
mV
VR = 1 V, f = 1 MHz
CD
10
pF
IF = 10 mA , IR = 10 mA to
IR = 1 mA, RL = 100 Ω
trr
5
ns
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
14
C D - Typical Capacitance (pF)
I F - Forward Current (mA)
1000
T j = 125 °C
100
- 40 °C
10
1
25 °C
0.1
0.01
0
0.2
18867
1.2
0.4 0.6 0.8
1
VF - Forward Voltage (V)
10
8
6
4
2
0
1.4
0
18868
Figure 1. Typical Forward Voltage Forward Current
vs. Various Temperatures
12
4
8
12
16
20
24
VR - Reverse Voltage (V)
28
Figure 3. Typical Capacitance °C vs.
Reverse Applied Voltage VR
1000
I R - Reverse Current (µA)
T j = 125 °C
100
100 °C
75 °C
10
50 °C
1
25 °C
0.1
0.01
0
18869
5
10
15
20
25
VR - Reverse Voltage (V)
30
Figure 2. Typical Variation of Reverse Current
vs. Various Temperatures
www.vishay.com
2
For technical questions within your region, please contact one of the following: Document Number 82394
[email protected], [email protected], [email protected]
Rev. 1.0, 14-Oct-10
BAT54-02V-V-G
Vishay Semiconductors
0.7 (0.028)
1.7 (0.067)
0.9 (0.035)
1.5 (0.059)
0.7 (0.028)
0.5 (0.020)
0.1 (0.004) max.
0.08 (0.003)
0.20 (0.008)
Package Dimensions in millimeters (inches): SOD-523
1.3 (0.051)
1.1 (0.043)
0.4 (0.016)
0.35 (0.014)
0.18 (0.007)
foot print recommendation:
1.45 (0.057)
Document no.: S8-V-3880.02-001 (4)
Rev. h - Date: 13. Oct. 2010
0.35 (0.014)
16864
Document Number 82394
Rev. 1.0, 14-Oct-10
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
3
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Vishay
Disclaimer
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Document Number: 91000
Revision: 11-Mar-11
www.vishay.com
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