VISHAY BAS385_10

BAS385
Vishay Semiconductors
Small Signal Schottky Diode
Features
• Integrated protection ring against static
discharge
• Very low forward voltage
• AEC-Q101 qualified
• Compliant to RoHS directive 2002/95/EC
and in accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21
definition
9612315
Applications
Mechanical Data
• Applications where a very low forward voltage is
required
Case: MicroMELF
Weight: approx. 12 mg
Cathode band color: black
Packaging codes/options:
TR3/10 k per 13" reel (8 mm tape), 10 k/box
TR/2.5 k per 7" reel (8 mm tape), 12.5 k/box
Parts Table
Part
Type differentiation
Ordering code
Remarks
VR = 30 V
BAS385-TR3 or BAS385-TR
Tape and Reel
BAS385
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Reverse voltage
Symbol
Value
Unit
VR
30
V
tp = 10 ms
IFSM
5
A
tp ≤ 1 s
IFRM
300
mA
IF
200
mA
IFAV
200
mA
Test condition
Symbol
Value
Unit
on PC board
50 mm x 50 mm x 1.6 mm
RthJA
320
K/W
Peak forward surge current
Repetitive peak forward current
Forward continuous current
VRWM = 25 V
Average forward current
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Junction to ambient air
Junction temperature
Storage temperature range
Document Number 85504
Rev. 2.0, 09-Jun-10
Tj
125
°C
Tstg
- 65 to + 150
°C
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
1
BAS385
Vishay Semiconductors
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Max.
Unit
IF = 0.1 mA
VF
240
mV
IF = 1 mA
VF
320
mV
IF = 10 mA
VF
400
mV
IF = 30 mA
VF
500
mV
Forward voltage
Reverse current
Diode capacitance
Min.
Typ.
IF = 100 mA
VF
800
mV
VR = 25 V, tp = 300 µs
IR
2.3
µA
VR = 1 V, f = 1 MHz
CD
10
pF
Typical Characteristics
200
1000
VR = 30 V
180
160
140
RthJA = 540 kW
120
PR - Limit
at 100 % VR
100
80
PR - Limit
at 80 % VR
60
40
Tj = 125 °C
IF - Forward Current (mA)
PR - Reverse Power Dissipation (mW)
Tamb = 25 °C, unless otherwise specified
100
Tj = 25 °C
10
1
20
0
0.1
25
50
75
100
125
150
Tj - Junction Temperature (°C)
15822
0
Figure 1. Max. Reverse Power Dissipation vs. Junction
Temperature
1.0
1.5
Figure 3. Forward Current vs. Forward Voltage
1000
10
CD - Diode Capacitance (pF)
IR - Reverse Current (µA)
0.5
VF - Forward Voltage (V)
15824
VR = VRRM
100
10
f = 1 MHz
9
8
7
6
5
4
3
2
1
0
1
25
15823
50
75
100
125
Tj - Junction Temperature (°C)
Figure 2. Reverse Current vs. Junction Temperature
www.vishay.com
2
0.1
150
15825
1
10
100
VR - Reverse Voltage (V)
Figure 4. Diode Capacitance vs. Reverse Voltage
For technical questions within your region, please contact one of the following: Document Number 85504
[email protected], [email protected], [email protected]
Rev. 2.0, 09-Jun-10
BAS385
Vishay Semiconductors
0.71
1.3
1.27
9.9
0.152
10
25
0.355
2.5
24
95 10329
Figure 5. Board for RthJA definition (in mm)
Package Dimensions in millimeters (inches): MicroMELF
0.6 (0.024)
*
1.1 (0.043)
1.2 (0.047)
<
1.
surface plan
gl
1 (0.039)
35
(
as 0.0
s 53
)
surface plan
Cathode indification
0.25 (0.010)
0.15 (0.006)
> R2.5 (0.098)
glass
2 (0.079)
1.8 (0.071)
* The gap between plug and glass can
be either on cathode or anode side
Foot print recommendation:
Wave soldering
2.4 (0.094)
2.8 (0.110)
0.8 (0.031)
0.9 (0.035)
0.9 (0.035)
1.4 (0.055)
1.2 (0.047)
0.8 (0.031)
Reflow soldering
0.8 (0.031)
1 (0.039)
Created - Date: 26.July.1996
Rev. 13 - Date: 07.June.2006
Document no.:6.560-5007.01-4
96 12072
Document Number 85504
Rev. 2.0, 09-Jun-10
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
3
MiniMELF SOD80
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters (inches)
1.6 (0.063)
1.4 (0.055)
Cathode indification
*
0.47 (0.019) max.
3.7 (0.146)
3.3 (0.130)
* The gap between plug and glass can
be either on cathode or anode side
Foot print recommendation:
1.25 (0.49) min.
2 (0.079) min.
2.5 (0.098) max.
5 (0.197) ref.
Document no.:6.560-5005.01-4
Rev. 8 - Date: 07.June.2006
96 12070
Document Number: 84024
Rev. 1.3, 12-Jan-07
For technical questions, contact: [email protected]
www.vishay.com
21
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
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Document Number: 91000
Revision: 11-Mar-11
www.vishay.com
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