BA479G, BA479S Vishay Semiconductors RF PIN Diodes - Single in DO-35 Features • Wide frequency range 10 MHz to 1 GHz • AEC-Q101 qualified • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition 94 9367 Applications Mechanical Data • Current controlled HF resistance in adjustable attenuators Case: DO-35 Weight: approx. 125 mg Cathode Band Color: black Packaging Codes/Options: TR/10 k per 13" reel (52 mm tape), 50 k/box TAP/10 k per Ammopack (52 mm tape), 50 k/box Parts Table Part Type differentiation Ordering code Type Marking Remarks BA479G VR = 30 V, Zr > 5 kΩ BA479G-TR or BA479G-TAP BA479G Tape and Reel/Ammopack BA479S VR = 30 V, Zr > 9 kΩ BA479S-TR or BA479S-TAP BA479S Tape and Reel/Ammopack Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Symbol Value Reverse voltage Parameter Test condition VR 30 Unit V Forward continuous current IF 50 mA Thermal Characteristics Tamb = 25 °C, unless otherwise specified Parameter Thermal resistance junction to ambient air Junction temperature Storage temperature range Document Number 85527 Rev. 1.7, 05-Aug-10 Test condition Symbol Value Unit l = 4 mm, TL = constant RthJA 350 K/W Tj 125 °C Tstg - 55 to + 150 °C For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 1 BA479G, BA479S Vishay Semiconductors Electrical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition Part Symbol Max. Unit 1000 mV IR 50 nA f = 100 MHz, VR = 0 CD 0.5 pF f = 100 MHz, IF = 1.5 mA rf 50 Ω Forward voltage IF = 20 mA VF Reverse current VR = 30 V Diode capacitance Differential forward resistance f = 100 MHz, VR = 0 Reverse impedance BA479G zr 5 BA479S zr 9 Typ. kΩ kΩ τ IF = 10 mA, IR = 10 mA Minority carrier lifetime Min. 4 µs Typical Characteristics IF - Forward Current (mA) 100 10 Tamb = 25 °C 1 Scattering Limit 0.1 0.01 0 95 9735 0.4 0.8 1.2 1.6 2.0 VF - Forward Voltage (V) 20 Π - Circuit with 10 dB Attenuation V 0 = 40 dBmV 0 f 1 = 100 MHz unmodulated - 20 - 40 - 60 - 80 95 9733 Figure 1. Forward Current vs. Forward Voltage rf - Differential Forward Resistance (Ω) a - Typical Cross Modulation Distortion (dB) Tamb = 25 °C, unless otherwise specified 0 20 40 60 80 f 2 , modulated with 200 kHz, m = 100 % (MHz) Figure 3. Typ. Cross Modulation Distortion vs. Frequency f2 10 000 1000 100 10 1 0.001 95 9734 f > 20 MHz Tj = 25 °C 0.01 0.1 1 10 IF - Forward Current (mA) Figure 2. Differential Forward Resistance vs. Forward Current www.vishay.com 2 For technical questions within your region, please contact one of the following: Document Number 85527 [email protected], [email protected], [email protected] Rev. 1.7, 05-Aug-10 BA479G, BA479S Vishay Semiconductors Package Dimensions in millimeters (inches): DO-35 3.9 (0.154) max. 26 (1.024) min. 1.5 (0.059) 26 (1.024) min. 1.7 (0.067) 0.55. (0.022) max Cathode identification Rev. 6 - Date: 29. January 2007 Document no.: 6.560-5004.02-4 94 9366 Document Number 85527 Rev. 1.7, 05-Aug-10 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 3 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1