BAV300, BAV301, BAV302, BAV303 Vishay Semiconductors Small Signal Switching Diodes, High Voltage Features • • • • • Silicon Epitaxial Planar Diodes Saving space Hermetic sealed parts Fits onto SOD-323 / SOT-23 footprints Electrical data identical with the devices BAV100...BAV103 / BAV200...BAV203 • AEC-Q101 qualified • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition 9612315 Applications Mechanical Data • General purposes Case: MicroMELF Weight: approx. 12 mg Cathode band color: black Packaging codes/options: TR3 / 10 k per 13" reel (8 mm tape), 10 k/box TR / 2.5 k per 7" reel (8 mm tape), 12.5 k/box Parts Table Part Type differentiation Ordering code Remarks BAV300 VRRM = 60 V BAV300-TR3 or BAV300-TR Tape and Reel BAV301 VRRM = 120 V BAV301-TR3 or BAV301-TR Tape and Reel BAV302 VRRM = 200 V BAV302-TR3 or BAV302-TR Tape and Reel BAV303 VRRM = 250 V BAV303-TR3 or BAV303-TR Tape and Reel Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Test condition Peak reverse voltage Reverse voltage Forward continuous current Peak forward surge current Forward peak current Document Number 85545 Rev. 2.0, 20-Aug-10 Part Symbol Value Unit BAV300 VRRM 60 V BAV301 VRRM 120 V BAV302 VRRM 200 V BAV303 VRRM 250 V BAV300 VR 50 V BAV301 VR 100 V BAV302 VR 150 V BAV303 VR 200 V IF 250 mA tp = 1 s, Tj = 25 °C IFSM 1 A f = 50 Hz IFM 625 mA For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 1 BAV300, BAV301, BAV302, BAV303 Vishay Semiconductors Thermal Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition Symbol Value Unit RthJA 500 K/W Tj 175 °C Tstg - 65 to + 175 °C Mounted on epoxy-glass hard tissue, fig. 4 Junction to ambient air 35 µm copper clad, 0.9 mm2 copper area per electrode Junction temperature Storage temperature range Electrical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition Reverse current Breakdown voltage Diode capacitance www.vishay.com 2 Symbol Max. Unit VF Min. Typ. 1000 mV VR = 50 V BAV300 IR 100 nA VR = 100 V BAV301 IR 100 nA VR = 150 V BAV302 IR 100 nA VR = 200 V BAV303 IR 100 nA Tj = 100 °C, VR = 50 V BAV300 IR 15 µA Tj = 100 °C, VR = 100 V BAV301 IR 15 µA Tj = 100 °C, VR = 150V BAV302 IR 15 µA Tj = 100 °C, VR = 200V BAV303 IR 15 µA IR = 100 µA, tp/T = 0.01, tp = 0.3 ms BAV300 V(BR) 60 V BAV301 V(BR) 120 V BAV302 V(BR) 200 V BAV303 V(BR) 250 V IR = 100 µA, tp/T = 0.01, tp = 0.3 ms Differential forward resistance Reverse recovery time Part IF = 100 mA Forward voltage VR = 0, f = 1 MHz CD 1.5 pF IF = 10 mA rf 5 Ω IF = IR = 30 mA, iR = 3 mA, RL = 100 Ω trr 50 ns For technical questions within your region, please contact one of the following: Document Number 85545 [email protected], [email protected], [email protected] Rev. 2.0, 20-Aug-10 BAV300, BAV301, BAV302, BAV303 Vishay Semiconductors Typical Characteristics Tamb = 25 °C, unless otherwise specified 0.71 1.3 1.27 0.152 100 9.9 Scattering Limit 10 0.355 25 1 10 I R - Reverse Current (µA) 1000 VR = VRRM 0.1 2.5 0.01 0 40 80 120 160 200 95 10329 24 Tj - Junction Temperature (°C) 94 9084 Figure 1. Reverse Current vs. Junction Temperature Figure 4. Board for RthJA Definition (in mm) I F - Forward Current (mA) 1000 Tj = 25 °C 100 Scattering Limit 10 1 0.1 0 94 9085 0.4 0.8 1.2 1.6 2.0 V F - Forward Voltage (V) rf - Differential Forward Resistance (Ω) Figure 2. Forward Current vs. Forward Voltage 1000 100 Tj = 25 °C 10 1 0.1 94 9089 1 10 100 I F - Forward Current (mA) Figure 3. Differential Forward Resistance vs. Forward Current Document Number 85545 Rev. 2.0, 20-Aug-10 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 3 BAV300, BAV301, BAV302, BAV303 Vishay Semiconductors Package Dimensions in millimeters (inches): MicroMELF 0.6 (0.024) * 1.1 (0.043) 1.2 (0.047) < 1. surface plan gl 1 (0.039) 35 ( as 0.0 s 53 ) surface plan Cathode indification 0.25 (0.010) 0.15 (0.006) > R2.5 (0.098) glass 2 (0.079) 1.8 (0.071) * The gap between plug and glass can be either on cathode or anode side Foot print recommendation: Wave soldering 2.4 (0.094) 2.8 (0.110) 0.8 (0.031) 0.9 (0.035) 0.9 (0.035) 1.4 (0.055) 1.2 (0.047) 0.8 (0.031) Reflow soldering 0.8 (0.031) 1 (0.039) Created - Date: 26.July.1996 Rev. 13 - Date: 07.June.2006 Document no.:6.560-5007.01-4 96 12072 www.vishay.com 4 For technical questions within your region, please contact one of the following: Document Number 85545 [email protected], [email protected], [email protected] Rev. 2.0, 20-Aug-10 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Revision: 12-Mar-12 1 Document Number: 91000