BAR88... Silicon PIN Diode • Optimized for low current antenna switches in hand held applications • Very low forward resistance (typ. 1.5 Ω @ I F = 1 mA) • Low capacitance at zero volt reverse bias at frequencies above 1 GHz (typ. 0.28 pF) • Very low signal distortion • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 BAR88-02LRH BAR88-02V Type BAR88-02LRH BAR88-02V 1Pb-containing Package TSLP-2-7 SC79 Configuration single, leadless single LS(nH) 0.4 0.6 Marking U8 U package may be available upon special request Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Diode reverse voltage VR 80 V Forward current IF 100 mA Total power dissipation Ptot Value mW BAR88-02LRH Ts ≤ 133°C 250 BAR88-02V, Ts ≤ 123°C 250 150 Junction temperature Tj Operating temperature range Top -55 ... 125 Storage temperature Tstg -55 ... 150 1 Unit °C 2010-03-05 BAR88... Thermal Resistance Parameter Symbol Junction - soldering point 1) RthJS Value Unit K/W BAR88-02LRH ≤ 65 BAR88-02V ≤ 105 Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Parameter Unit min. typ. max. 80 - - V - - 50 nA DC Characteristics Breakdown voltage V(BR) I(BR) = 5 µA Reverse current IR VR = 60 V Forward voltage V VF IF = 1 mA - 0.75 0.9 IF = 100 mA - 0.95 1.2 1For calculation of RthJA please refer to Application Note Thermal Resistance 2 2010-03-05 BAR88... Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. AC Characteristics Diode capacitance pF CT VR = 1 V, f = 1 MHz - 0.3 0.4 VR = 0 V, f = 100 MHz - 0.4 - VR = 0 V, f = 1 GHz - 0.28 - VR = 0 V, f = 1.8 GHz - 0.25 - Reverse parallel resistance kΩ RP VR = 0 V, f = 100 MHz - 65 - VR = 0 V, f = 1 GHz - 2.5 - VR = 0 V, f = 1.8 GHz - 1.5 - Forward resistance Ω rf I F = 1 mA, f = 100 MHz - 1.5 2.5 I F = 5 mA, f = 100 MHz - 0.8 - I F = 10 mA, f = 100 MHz - 0.6 - τ rr - 500 - ns I-region width WI - 13 - µm Insertion loss1) IL Charge carrier life time I F = 10 mA, IR = 6 mA, measured at IR = 3 mA, RL = 100 Ω dB I F = 1 mA, f = 1.8 GHz - 0.11 - I F = 5 mA, f = 1.8 GHz - 0.07 - I F = 10 mA, f = 1.8 GHz - 0.06 - VR = 0 V, f = 0.9 GHz - 15 - VR = 0 V, f = 1.8 GHz - 11 - VR = 0 V, f = 2.45 GHz - 9 - Isolation1) 1BAR88-02LRH ISO in series configuration, Z = 50Ω 3 2010-03-05 BAR88... Diode capacitance CT = ƒ (VR) f = Parameter Reverse parallel resistance RP = ƒ(V R) f = Parameter 10 4 0.5 KOhm pF 10 3 100 MHz 1 MHz 100 MHz 1 GHz 1.8 GHz 0.35 Rp CT 0.4 10 2 0.3 1 GHz 10 1 0.25 1.8 GHz 0.2 10 0 0.15 0.1 0 2 4 6 8 10 12 14 16 V 10 -1 0 20 2 4 6 8 10 12 14 16 VR V 20 VR Forward resistance rf = ƒ (I F) f = 100MHz Forward current IF = ƒ (VF) TA = Parameter 10 2 0 10 A 10 -1 Ohm 10 -2 10 -3 IF rf 10 1 10 -4 -40°C +25°C +85°C +125°C 10 -5 10 0 10 -6 10 -7 10 -8 10 -1 -2 10 10 -1 10 0 10 1 mA 10 10 -9 0 2 IF 0.2 0.4 0.6 0.8 V 1.2 VF 4 2010-03-05 BAR88... Forward current IF = ƒ (T S) Forward current IF = ƒ (T S) BAR88-02LRH BAR88-02V 120 120 mA 100 100 90 90 80 80 IF IF mA 70 70 60 60 50 50 40 40 30 30 20 20 10 10 0 0 15 30 45 60 90 105 120 °C 75 0 0 150 15 30 45 60 90 105 120 °C 75 TS 150 TS Permissible Puls Load RthJS = ƒ (tp) Permissible Pulse Load BAR88-02LRH IFmax / I FDC = ƒ (t p), BAR88-02LRH 10 2 10 2 10 IFmax/IFDC RthJS K/W 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 0 10 -1 -6 10 10 -5 10 -4 10 -3 10 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 -2 10 -1 °C 10 10 0 -6 10 1 tp 10 -5 10 -4 10 -3 10 -2 °C 10 0 tp 5 2010-03-05 BAR88... Permissible Puls Load RthJS = ƒ (tp) Permissible Pulse Load BAR88-02V IFmax / I FDC = ƒ (t p) BAR88-02V 3 10 10 2 I Fmax/IFDC K/W RthJS 10 2 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 10 0 10 -1 -6 10 10 -5 10 -4 10 -3 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 10 -2 °C 10 10 0 -6 10 0 10 -5 10 -4 10 -3 10 -2 °C tp 10 0 tp Insertion loss IL = -|S21|2 = ƒ(f) Isolation ISO = -|S21| 2 = ƒ(f) IF = Parameter VR = Paramter BAR88-02LRH in series configuration, Z = 50Ω BAR88-02LRH in series configuration, Z = 50Ω 0 0 dB dB |S21|2 |S21|2 -0.1 -0.15 10 mA 5 mA 1 mA 0.5 mA 0.1 mA -0.2 -0.25 -10 -15 0V 1V 10 V -20 -0.3 -25 -0.35 -0.4 0 1 2 3 4 GHz -30 0 6 f 1 2 3 4 GHz 6 f 6 2010-03-05 Package SC79 BAR88... Package Outline 0.2 M A +0.05 0.13 -0.03 0.8 ±0.1 0.2 ±0.05 10˚MAX. 1.6 ±0.1 1 0.3 ±0.05 Cathode marking 10˚MAX. 1.2 ±0.1 A 2 0.55 ±0.04 0.35 1.35 Foot Print 0.35 Marking Layout (Example) 2005, June Date code BAR63-02V Type code Cathode marking Laser marking Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø180 mm = 8.000 Pieces/Reel (2 mm Pitch) Reel ø330 mm = 10.000 Pieces/Reel Cathode marking 0.4 0.93 0.2 8 1.96 Reel with 2 mm Pitch 2 1.33 Standard 4 Cathode marking 7 0.66 2010-03-05 BAR88... Date Code marking for discrete packages with one digit (SCD80, SC79, SC75 1) ) CES-Code Month 2 0 03 2 0 04 2005 2006 2 0 07 2008 2009 2010 2011 2012 2 0 13 2014 01 a p A P a p A P a p A P 02 b q B Q b q B Q b q B Q 03 c r C R c r C R c r C R 04 d s D S d s D S d s D S 05 e t E T e t E T e t E T 06 f u F U f u F U f u F U 07 g v G V g v G V g v G V 08 h x H X h x H X h x H X 09 j y J Y j y J Y j y J Y 10 k z K Z k z K Z k z K Z 11 l 2 L 4 l 2 L 4 l 2 L 4 12 n 3 N 5 n 3 N 5 n 3 N 5 1) New Marking Layout for SC75, implemented at October 2005. . 8 2010-03-05 Package TSLP-2-7 BAR88... Package Outline Top view Bottom view 0.39 +0.01 -0.03 0.6 ±0.05 0.05 MAX. 1 1 0.25 ±0.035 1) 2 1±0.05 0.65 ±0.05 2 0.5 ±0.035 1) Cathode marking 1) Dimension applies to plated terminal Foot Print 0.45 Copper Solder mask 0.375 0.35 0.275 1 0.925 0.3 0.35 0.6 0.275 For board assembly information please refer to Infineon website "Packages" Stencil apertures Marking Layout (Example) BAR90-02LRH Type code Cathode marking Laser marking Standard Packing Reel ø180 mm = 15.000 Pieces/Reel Reel ø330 mm = 50.000 Pieces/Reel (optional) 0.5 Cathode marking 8 1.16 4 0.76 9 2010-03-05 BAR88... Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office ( <www.infineon.com>). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 10 2010-03-05