SECOS S9018W

S9018W
NPN Silicon
Plastic Encapsulated Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURE
SOT-323
AM/FM Amplifier, Local Oscillator of FM/VHF Tuner
High Current Gain Bandwidth Product fT = 1.1 GHz (Typ)
A
L
3
3
C B
Top View
1
1
K
2
E
2
PACKAGING INFORMATION
D
Weight: 0.0074 g
F
Collector
G
H
J
3
REF.
MARKING CODE
1
A
B
C
D
E
F
Base
J8
2
Emitter
Millimeter
Min.
Max.
1.80
2.20
1.80
2.45
1.15
1.35
0.80
1.10
1.20
1.40
0.20
0.40
REF.
G
H
J
K
L
Millimeter
Min.
Max.
0.100 REF.
0.525 REF.
0.08
0.25
0.650 TYP.
ABSOLUTE MAXIMUM RATINGS (at TA = 25°C unless otherwise specified)
Parameter
Symbol
Ratings
Unit
VCBO
VCEO
VEBO
IC
PC
TJ, TSTG
30
15
5
50
200
+150, -55 ~ +150
V
V
V
mA
mW
℃
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current – Continuous
Collector Power Dissipation
Junction, Storage Temperature
ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise specified)
Parameter
Collector-base Breakdown Voltage
Collector-emitter Breakdown Voltage
Emitter-base Breakdown Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
Collector-emitter Saturation Voltage
Base-emitter Saturation Voltage
DC Current Gain
Transition Frequency
Collector Output Capacitance
Symbol
Min.
Typ.
Max.
Unit
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
VCE(sat)
VBE(sat)
hFE
fT
COB
30
15
5
-
-
50
100
100
500
1400
190
2
V
V
V
nA
nA
nA
mV
mV
70
600
-
MHz
pF
Test Conditions
IC = 100 μA, IE = 0
IC = 0.1 mA, IB = 0
IE = 100 μA, IC = 0
VCB = 12 V, IE = 0
VCE = 12 V, IB = 0
VEB = 3 V, IC = 0
IC = 10 mA, IB = 1 mA
IC = 10 mA, IB = 1 mA
VCE = 5 V, IC = 1 mA
VCE = 5 V, IC = 10 mA, f = 30 MHz
VCB = 10 V, IE = 0, f = 1 MHz
CLASSIFICATION OF hFE
01-June-2002 Rev. A
Rank
L
H
hFE
70 - 105
105 - 190
Page 1 of 2
S9018W
Elektronische Bauelemente
NPN Silicon
Plastic Encapsulated Transistor
CHARACTERISTIC CURVES
01-June-2002 Rev. A
Page 2 of 2