INFINEON BSF030NE2LQ

n-Channel Power MOSFET
OptiMOS™
BSF030NE2LQ
Data Sheet
2.0, 2011-03-18
Final
Industrial & Multimarket
OptiMOS™ Power-MOSFET
BSF030NE2LQ
1
Description
OptiMOS™25V products are class leading power MOSFETs for highest power
density and energy efficient solutions. Ultra low gate and output charges together
with lowest on state resistance in small footprint packages make OptiMOS™ 25V
the best choice for the demanding requirements of voltage regulator solutions in
Servers, Datacom and Telecom applications. Super fast switching Control FETs
together with low EMI Sync FETs provide solutions that are easy to design in.
OptiMOS™ products are available in high performance packages to tackle your
most challenging applications giving full flexibility in optimizing space, efficiency
and cost. OptiMOS™ products are designed to meet and exceed the energy
efficiency and power density requirements of the sharpened next generation
voltage regulation standards in computing applications.
Features
•
•
•
•
•
•
•
•
•
•
Optimized for high performance buck converters
100% avalanche tested
Low parasitic inductance
Qualified according to JEDEC1) for target applications
Low profile (<0.7 mm)
Pb-free plating; RoHS compliant
Halogen-free according to IEC61249-2-21
Double-sided cooling
Compatible with DirectFET® package SQ footprint and outline2)
100% Rg Tested
Applications
•
•
•
•
On board power for server
Power managment for high performance computing
Synchronous rectification
High power density point of load converters
Table 1
Key Performance Parameters
Parameter
Value
Unit
Related Links
VDS
25
V
IFX OptiMOS webpage
RDS(on),max
3
mΩ
IFX OptiMOS product brief
ID
75
A
IFX OptiMOS spice models
QOSS
13
nC
IFX Design tools
Qg.typ
23
Type
Package
Marking
BSF030NE2LQ
MG-WDSON-2
03E2
1) J-STD20 and JESD22
2) CanPAK uses DirectFET ® technology licensed from International Rectifier Corporation. DirectFET ® is a registered
trademark of International Rectifier Corporation.
Final Data Sheet
1
2.0, 2011-03-18
OptiMOS™ Power-MOSFET
BSF030NE2LQ
2
Maximum ratings
at Tj = 25 °C, unless otherwise specified.
Table 2
Maximum ratings
Parameter
Symbol
Values
Unit
Note / Test Condition
A
VGS=10 V, TC=25 °C
Min.
Typ.
Max.
-
-
75
-
-
47
VGS=10 V, TC=100 °C
-
-
24
VGS=10 V, TA=25 °C,
RthJA=45 K/W1))
ID,pulse
-
-
300
TC=25 °C
Avalanche current, single pulse
IAS
-
-
40
Avalanche energy, single pulse
EAS
-
-
50
mJ
Gate source voltage
VGS
-20
-
20
V
Power dissipation
Ptot
-
-
28
W
-
-
2.2
-40
-
150
°C
-
-
-
Ncm
Continuous drain current
ID
Pulsed drain current2)
3)
Operating and storage temperature
Tj,Tstg
IEC climatic category; DIN IEC 68-1
ID=35 A,RGS=25 Ω
TC=25 °C
TA=25 °C, RthJA=58 K/W
1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection.
PCB is vertical in still air.
2) See figure 3 for more detailed information
3) See figure 13 for more detailed information
3
Thermal characteristics
Table 3
Thermal characteristics
Parameter
Symbol
Thermal resistance, junction - case RthJC
Device on PCB
RthJA
Values
Unit
Note /
Test Condition
°K/W
bottom
Min.
Typ.
Max.
-
1.0
-
-
-
4.5
top
-
-
58
6 cm2 cooling area1)
1) See figure 13 for more detailed information
Final Data Sheet
2
2.0, 2011-03-18
OptiMOS™ Power-MOSFET
BSF030NE2LQ
Electrical characteristics
4
Electrical characteristics
Electrical characteristics, at Tj=25 °C, unless otherwise specified.
Table 4
Static characteristics
Parameter
Symbol
Drain-source breakdown voltage V(BR)DSS
Values
Min.
Typ.
Max.
25
-
-
Unit
Note / Test Condition
V
VGS=0 V, ID=1.0 mA
Gate threshold voltage
VGS(th)
1
-
2.2
Zero gate voltage drain current
IDSS
-
0.1
10
-
10
100
-
10
100
nA
VGS=20 V, VDS=0 V
-
3.3
4.1
mΩ
VGS=4.5 V, ID=30A
-
2.5
3
Gate-source leakage current
IGSS
Drain-source on-state resistance RDS(on)
VDS=VGS, ID=250 µA
VDS=25 V, VGS=0 V,
Tj=125 °C
VGS=10 V, ID=30 A
Gate resistance
RG
-
0.6
-
Ω
Transconductance
gfs
55
110
-
S
Table 5
VDS=25 V, VGS=0 V,
Tj=25 °C
µA
|VDS|>2|ID|RDS(on)max,
ID=30 A
Dynamic characteristics
Parameter
Symbol
Values
Min.
Typ.
Max.
Input capacitance
Ciss
-
1700
-
Output capacitance
Coss
-
660
-
Reverse transfer capacitance
Crss
-
72
-
Turn-on delay time
td(on)
-
2.8
-
Rise time
tr
-
3.4
-
Turn-off delay time
td(off)
-
18
-
Fall time
tf
-
2.6
-
Final Data Sheet
3
Unit
Note /
Test Condition
pF
VGS=0 V, VDS=12 V,
f=1 MHz
ns
VDD=12V, VGS=10 V,
ID=30 A, RG= 1.6 Ω
2.0, 2011-03-18
OptiMOS™ Power-MOSFET
BSF030NE2LQ
Electrical characteristics
Table 6
Gate charge characteristics1)
Parameter
Symbol
Values
Min.
Typ.
Max.
Unit
Note /
Test Condition
nC
VDD=12 V,
ID=30 A,
VGS=0 to 4.5 V
Gate to source charge
Qgs
-
4.4
-
Gate charge at threshold
Qg(th)
-
2.7
-
Gate to drain charge
Qgd
-
2.7
-
Switching charge
Qsw
-
4.3
-
Gate charge total
Qg
-
11.3
-
Gate plateau voltage
Vplateau
-
2.6
-
V
Gate charge total
Qg
-
23
-
nC
Gate charge total, sync. FET
Qg(sync)
-
9.8
-
VDS=0.1 V,
VGS=0 to 4.5 V
Output charge
Qoss
-
13
-
VDD=12 V, VGS=0 V
VDD=12 V,
ID=30 A,
VGS=0 to 10V
1) See figure 16 for gate charge parameter definition
Table 7
Reverse diode characteristics
Parameter
Symbol
Values
Min.
Typ.
Max.
Unit
Note /
Test Condition
A
TC=25 °C
Diode continuous forward current
Is
-
-
28
Diode pulse current
IS,pulse
-
-
112
Diode forward voltage
VSD
-
0.86
1
V
VGS=0 V, IF=30 A,
Tj=25 °C
Reverse recovery charge
Qrr
-
10
-
nC
VR=15 V, IF=Is,
diF/dt=400 A/µs
Final Data Sheet
4
2.0, 2011-03-18
OptiMOS™ Power-MOSFET
BSF030NE2LQ
Electrical characteristics diagrams
5
Electrical characteristics diagrams
Table 8
1 Power dissipation
2 Drain current
Ptot = f(TC)
ID=f(TC); parameter:VGS
Table 9
3 Safe operating area TC=25 °C
ID=f(VDS); Tj=25 °C; D=0; parameter: Tp
Final Data Sheet
4 Max. transient thermal impedance
Z(thJC)=f(tp); parameter: D=tp/T
5
2.0, 2011-03-18
OptiMOS™ Power-MOSFET
BSF030NE2LQ
Electrical characteristics diagrams
Table 10
5 Typ. output characteristics TC=25 °C
6 Typ. drain-source on-state resistance
ID=f(VDS); Tj=25 °C; parameter: VGS
RDS(on)=f(ID); Tj=25 °C; parameter: VGS
Table 11
7 Typ. transfer characteristics
8 Typ. forward transconductance
ID=f(VGS); |VDS|>2|ID|RDS(on)max
gfs=f(ID); Tj=25 °C
Final Data Sheet
6
2.0, 2011-03-18
OptiMOS™ Power-MOSFET
BSF030NE2LQ
Electrical characteristics diagrams
Table 12
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
RDS(on)=f(Tj); ID=30 A; VGS=10 V
VGS(th)=f(Tj); VGS=VDS; ID=250 µA
Table 13
11 Typ. capacitances
12 Forward characteristics of reverse diode
C=f(VDS); VGS=0 V; f=1 MHz
IF=f(VSD); parameter: Tj
Final Data Sheet
7
2.0, 2011-03-18
OptiMOS™ Power-MOSFET
BSF030NE2LQ
Electrical characteristics diagrams
Table 14
13 Avalanche characteristics
14 Typ. gate charge
IAS=f(tAV); RGS=25 Ω; parameter: Tj(start)
VGS=f(Qgate); ID=30 A pulsed; parameter: VDD
Table 15
15 Drain-source breakdown voltage
16 Gate charge waveforms
VBR(DSS)=f(Tj); ID=1 mA
Final Data Sheet
8
2.0, 2011-03-18
OptiMOS™ Power-MOSFET
BSF030NE2LQ
Package outlines
6
Package outlines
Figure 1
Outlines MG-WDSON-2, dimensions in mm/inches
Final Data Sheet
9
2.0, 2011-03-18
OptiMOS™ Power-MOSFET
BSF030NE2LQ
Package outlines
7
Package outlines
Figure 2
Outlines MG-WDSON-2, dimensions in mm/inches
Final Data Sheet
10
2.0, 2011-03-18
OptiMOS™ Power-MOSFET
BSF030NE2LQ
Package outlines
8
Package outlines
Figure 3
Outlines MG-WDSON-2, dimensions in mm/inches
Final Data Sheet
11
2.0, 2011-03-18
OptiMOS™ Power-MOSFET
BSF030NE2LQ
Revision History
9
Revision History
Revision History: 2011-03-18, 2.0
Previous Revision:
Revision
Subjects (major changes since last revision)
0.4
Release of target data sheet
2.0
Release Final version
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Edition 2011-03-18
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2011 Infineon Technologies AG
All Rights Reserved.
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characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
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Final Data Sheet
12
2.0, 2011-03-18