MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS™P6 600VCoolMOS™P6PowerTransistor IPL60R255P6 DataSheet Rev.2.0 Final PowerManagement&Multimarket 600VCoolMOS™P6PowerTransistor IPL60R255P6 1Description ThinPAK8x8 CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.CoolMOS™P6seriescombinesthe experienceoftheleadingSJMOSFETsupplierwithhighclassinnovation. TheoffereddevicesprovideallbenefitsofafastswitchingSJMOSFET whilenotsacrificingeaseofuse.Extremelylowswitchingandconduction lossesmakeswitchingapplicationsevenmoreefficient,morecompact, lighterandcooler. Features •IncreasedMOSFETdv/dtruggedness •ExtremelylowlossesduetoverylowFOMRdson*QgandEoss •Veryhighcommutationruggedness •Easytouse/drive •Pb-freeplating,Halogenfreemoldcompound •QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20 andJESD22) Drain Pin 5 Gate Pin 1 Driver Source Pin 2 Applications Power Source Pin 3,4 PFCstages,hardswitchingPWMstagesandresonantswitchingstages fore.g.PCSilverbox,Adapter,LCD&PDPTV,Lighting,Server,Telecom andUPS. Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj,max 650 V RDS(on),max 255 mΩ Qg.typ 31 nC ID,pulse 43 A Eoss@400V 4.2 µJ Body diode di/dt 500 A/µs Type/OrderingCode Package Marking IPL60R255P6 PG-VSON-4 6R255P6 Final Data Sheet 2 RelatedLinks see Appendix A Rev.2.0,2014-05-16 600VCoolMOS™P6PowerTransistor IPL60R255P6 TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Final Data Sheet 3 Rev.2.0,2014-05-16 600VCoolMOS™P6PowerTransistor IPL60R255P6 2Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current1) Values Unit Note/TestCondition 15.9 10.1 A TC=25°C TC=100°C - 43 A TC=25°C - - 352 mJ ID=2.8A; VDD=50V; see table 10 EAR - - 0.53 mJ ID=2.8A; VDD=50V; see table 10 Avalanche current, repetitive IAR - - 2.8 A - MOSFET dv/dt ruggedness dv/dt - - 100 V/ns VDS=0...400V Gate source voltage (static) VGS -20 - 20 V static; Gate source voltage (dynamic) VGS -30 - 30 V AC (f>1 Hz) Power dissipation Ptot - - 126 W TC=25°C Storage temperature Tstg -40 - 150 °C - Operating junction temperature Tj -40 - 150 °C - Continuous diode forward current IS - - 13.8 A TC=25°C Diode pulse current IS,pulse - - 43 A TC=25°C Reverse diode dv/dt3) dv/dt - - 15 V/ns VDS=0...400V,ISD<=IS,Tj=25°C see table 8 Maximum diode commutation speed dif/dt - - 500 A/µs VDS=0...400V,ISD<=IS,Tj=25°C see table 8 Min. Typ. Max. ID - - Pulsed drain current2) ID,pulse - Avalanche energy, single pulse EAS Avalanche energy, repetitive 2) 1) Limited by Tj max. Maximum duty cycle D=0.75 Pulse width tp limited by Tj,max 3) IdenticallowsideandhighsideswitchwithidenticalRG 2) Final Data Sheet 4 Rev.2.0,2014-05-16 600VCoolMOS™P6PowerTransistor IPL60R255P6 3Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case Values Unit Note/TestCondition Min. Typ. Max. RthJC - - 0.99 °C/W - Thermal resistance, junction - ambient RthJA - - 62 °C/W device on PCB, minimal footprint Thermal resistance, junction - ambient RthJA for SMD version - - 45 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70µm thickness) copper area °C/W for drain connection and cooling. PCB is vertical without air stream cooling. Soldering temperature, wave & reflow soldering allowed - - 260 °C Final Data Sheet Tsold 5 reflow MSL3 Rev.2.0,2014-05-16 600VCoolMOS™P6PowerTransistor IPL60R255P6 4Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA 4.0 4.5 V VDS=VGS,ID=0.53mA - 10 1 - µA VDS=600,VGS=0V,Tj=25°C VDS=600,VGS=0V,Tj=150°C IGSS - - 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 0.230 0.597 0.255 - Ω VGS=10V,ID=6.4A,Tj=25°C VGS=10V,ID=6.4A,Tj=150°C Gate resistance RG - 4.4 - Ω f=1MHz,opendrain Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 600 - Gate threshold voltage V(GS)th 3.5 Zero gate voltage drain current IDSS Gate-source leakage current Table5Dynamiccharacteristics Parameter Symbol Input capacitance Values Min. Typ. Max. Ciss - 1450 - pF VGS=0V,VDS=100V,f=1MHz Output capacitance Coss - 64 - pF VGS=0V,VDS=100V,f=1MHz Effective output capacitance, energy related1) Co(er) - 52 - pF VGS=0V,VDS=0...400V Effective output capacitance, time related2) Co(tr) - 220 - pF ID=constant,VGS=0V,VDS=0...400V Turn-on delay time td(on) - 12 - ns VDD=400V,VGS=13V,ID=8A, RG=3.4Ω;seetable9 Rise time tr - 7 - ns VDD=400V,VGS=13V,ID=8A, RG=3.4Ω;seetable9 Turn-off delay time td(off) - 38 - ns VDD=400V,VGS=13V,ID=8A, RG=3.4Ω;seetable9 Fall time tf - 6 - ns VDD=400V,VGS=13V,ID=8A, RG=3.4Ω;seetable9 Unit Note/TestCondition Table6Gatechargecharacteristics Parameter Symbol Gate to source charge Values Min. Typ. Max. Qgs - 9 - nC VDD=400V,ID=8A,VGS=0to10V Gate to drain charge Qgd - 11 - nC VDD=400V,ID=8A,VGS=0to10V Gate charge total Qg - 31 - nC VDD=400V,ID=8A,VGS=0to10V Gate plateau voltage Vplateau - 6.1 - V VDD=400V,ID=8A,VGS=0to10V 1) Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to400V Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to400V 2) Final Data Sheet 6 Rev.2.0,2014-05-16 600VCoolMOS™P6PowerTransistor IPL60R255P6 Table7Reversediodecharacteristics Parameter Symbol Diode forward voltage Values Unit Note/TestCondition - V VGS=0V,IF=8A,Tj=25°C 282 - ns VR=400V,IF=8A,diF/dt=100A/µs; see table 8 - 3.4 - µC VR=400V,IF=8A,diF/dt=100A/µs; see table 8 - 24 - A VR=400V,IF=8A,diF/dt=100A/µs; see table 8 Min. Typ. Max. VSD - 0.9 Reverse recovery time trr - Reverse recovery charge Qrr Peak reverse recovery current Irrm Final Data Sheet 7 Rev.2.0,2014-05-16 600VCoolMOS™P6PowerTransistor IPL60R255P6 5Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Safeoperatingarea 102 140 1 µs 10 µs 120 100 µs 101 1 ms 10 ms 100 80 ID[A] Ptot[W] 100 60 DC 10-1 40 10-2 20 0 0 25 50 75 100 125 10-3 150 100 101 TC[°C] 102 103 VDS[V] Ptot=f(TC) ID=f(VDS);TC=25°C;D=0;parameter:tp Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 2 101 10 1 µs 10 µs 101 100 µs 1 ms 100 10 ms 0.5 ZthJC[K/W] ID[A] 100 DC 10-1 0.2 0.1 10 -1 0.05 0.02 -2 10 0.01 single pulse 10-3 100 101 102 103 10-2 10-5 10-4 VDS[V] 10-2 10-1 tp[s] ID=f(VDS);TC=80°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tP);parameter:D=tp/T 8 Rev.2.0,2014-05-16 600VCoolMOS™P6PowerTransistor IPL60R255P6 Diagram5:Typ.outputcharacteristics Diagram6:Typ.outputcharacteristics 45 30 20 V 10 V 20 V 10 V 40 25 35 20 7V 7V 25 ID[A] ID[A] 30 20 15 6V 15 10 5.5 V 10 6V 5 0 8V 8V 5 5V 5.5 V 5V 4.5 V 0 5 10 15 0 20 4.5 V 0 5 10 VDS[V] 15 20 VDS[V] ID=f(VDS);Tj=25°C;parameter:VGS ID=f(VDS);Tj=125°C;parameter:VGS Diagram7:Typ.drain-sourceon-stateresistance Diagram8:Drain-sourceon-stateresistance 1.50 0.65 1.40 1.30 0.55 1.20 1.10 5.5 V 6V 6.5 V 7V 0.45 10 V RDS(on)[Ω] RDS(on)[Ω] 1.00 0.90 0.80 20 V 0.70 typ 98% 0.35 0.25 0.60 0.50 0.15 0.40 0.30 0.20 0 5 10 15 20 25 30 35 0.05 -50 -25 0 25 ID[A] RDS(on)=f(ID);Tj=125°C;parameter:VGS Final Data Sheet 50 75 100 125 150 Tj[°C] RDS(on)=f(Tj);ID=6.4A;VGS=10V 9 Rev.2.0,2014-05-16 600VCoolMOS™P6PowerTransistor IPL60R255P6 Diagram9:Typ.transfercharacteristics Diagram10:Typ.gatecharge 45 10 25 °C 40 9 8 35 120 V 7 30 480 V VGS[V] ID[A] 6 25 150 °C 20 5 4 15 3 10 2 5 0 1 0 2 4 6 8 10 0 12 0 5 10 VGS[V] 15 20 25 30 35 Qgate[nC] ID=f(VGS);VDS=20V;parameter:Tj VGS=f(Qgate);ID=8.0Apulsed;parameter:VDD Diagram11:Forwardcharacteristicsofreversediode Diagram12:Avalancheenergy 2 10 400 25 °C 125 °C 350 300 101 IF[A] EAS[mJ] 250 200 150 100 100 50 10-1 0.0 0.5 1.0 1.5 2.0 0 25 50 VSD[V] 100 125 150 Tj[°C] IF=f(VSD);parameter:Tj Final Data Sheet 75 EAS=f(Tj);ID=2.8A;VDD=50V 10 Rev.2.0,2014-05-16 600VCoolMOS™P6PowerTransistor IPL60R255P6 Diagram13:Drain-sourcebreakdownvoltage Diagram14:Typ.capacitances 104 700 680 Ciss 660 103 620 C[pF] VBR(DSS)[V] 640 600 102 Coss 580 101 560 Crss 540 520 -75 -50 -25 0 25 50 75 100 125 150 175 100 0 100 Tj[°C] 200 300 400 500 VDS[V] VBR(DSS)=f(Tj);ID=1mA C=f(VDS);VGS=0V;f=1MHz Diagram15:Typ.Cossstoredenergy 6 5 Eoss[µJ] 4 3 2 1 0 0 100 200 300 400 500 VDS[V] Eoss=f(VDS) Final Data Sheet 11 Rev.2.0,2014-05-16 600VCoolMOS™P6PowerTransistor IPL60R255P6 6TestCircuits Table8Diodecharacteristics Test circuit for diode characteristics Diode recovery waveform V ,I Rg1 VDS( peak) VDS VDS VDS trr IF Rg 2 tF tS dIF / dt QF IF t dIrr / dt trr =tF +tS Qrr = QF + QS Irrm Rg1 = Rg 2 IF 10 %Irrm QS Table9switchingtimes(ss) Switching times test circuit for inductive load Switching times waveform VDS 90% VDS VGS VGS 10% td(on) td(off) tr ton tf toff Table10Unclampedinductiveload(ss) Unclamped inductive load test circuit Unclamped inductive waveform V(BR)DS ID VD VDS VDS Final Data Sheet 12 ID VDS Rev.2.0,2014-05-16 600VCoolMOS™P6PowerTransistor IPL60R255P6 7PackageOutlines Figure1OutlinePG-VSON-4,dimensionsinmm/inches Final Data Sheet 13 Rev.2.0,2014-05-16 600VCoolMOS™P6PowerTransistor IPL60R255P6 8AppendixA Table11RelatedLinks • IFXCoolMOSTMP6Webpage:www.infineon.com • IFXCoolMOSTMP6applicationnote:www.infineon.com • IFXCoolMOSTMP6simulationmodel:www.infineon.com • IFXDesigntools:www.infineon.com Final Data Sheet 14 Rev.2.0,2014-05-16 600VCoolMOS™P6PowerTransistor IPL60R255P6 RevisionHistory IPL60R255P6 Revision:2014-05-16,Rev.2.0 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2014-05-16 Release of final version WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: [email protected] Publishedby InfineonTechnologiesAG 81726München,Germany ©2014InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 15 Rev.2.0,2014-05-16