MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS™C6 650VCoolMOS™C6PowerTransistor IPL65R1K5C6S DataSheet Rev.2.0 Final PowerManagement&Multimarket 650VCoolMOS™C6PowerTransistor IPL65R1K5C6S 1Description ThinPAK5x6 CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.CoolMOS™C6seriescombinesthe experienceoftheleadingSJMOSFETsupplierwithhighclassinnovation. TheoffereddevicesprovideallbenefitsofafastswitchingSJMOSFET whilenotsacrificingeaseofuse.Extremelylowswitchingandconduction lossesmakeswitchingapplicationsevenmoreefficient,morecompact, lighterandcooler. Features •ExtremelylowlossesduetoverylowFOMRdson*QgandEoss •Veryhighcommutationruggedness •Easytouse/drive •Pb-freeplating,Halogenfreemoldcompound •QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20 andJESD22) Applications PFCstages,hardswitchingPWMstagesandresonantswitchingPWM stagesfore.g.PCSilverbox,Adapter,LCD&PDPTV,Lighting,Server, TelecomandUPS. Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseperatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj,max 700 V RDS(on),max 1.5 Ω Qg,typ 11 nC ID,pulse 8.4 A Eoss@400V 1.15 µJ Body diode di/dt 500 A/µs Type/OrderingCode Package Marking IPL65R1K5C6S ThinPAK 5x6 SMD 65C61K5 Final Data Sheet 2 RelatedLinks see Appendix A Rev.2.0,2014-07-08 650VCoolMOS™C6PowerTransistor IPL65R1K5C6S TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Final Data Sheet 3 Rev.2.0,2014-07-08 650VCoolMOS™C6PowerTransistor IPL65R1K5C6S 2Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current1) Values Unit Note/TestCondition 3 1.9 A TC = 25°C TC = 100°C - 8.4 A TC=25°C - - 26 mJ ID =0.6A; VDD = 50V EAR - - 0.10 mJ ID =0.6A; VDD = 50V Avalanche current, repetitive IAR - - 0.6 A - MOSFET dv/dt ruggedness dv/dt - - 50 V/ns VDS=0...520V Gate source voltage VGS -20 -30 - 20 30 V static; AC (f>1 Hz) Power dissipation (non FullPAK) Ptot - - 26.6 W TC=25°C Operating and storage temperature Tj,Tstg -40 - 150 °C - Continuous diode forward current IS - - 2.6 A TC=25°C IS,pulse - - 7.5 A TC = 25°C dv/dt - - 15 V/ns VDS=0...400V,ISD<=IS,Tj=25°C dif/dt - - 500 A/µs VDS=0...400V,ISD<=IS,Tj=25°C Min. Typ. Max. ID - - Pulsed drain current2) ID,pulse - Avalanche energy, single pulse EAS Avalanche energy, repetitive 2) Diode pulse current 3) Reverse diode dv/dt 3) Maximum diode commutation speed 3Thermalcharacteristics Table3Thermalcharacteristics(nonFullPAK) Parameter Symbol Thermal resistance, junction - case RthJC Values Unit Note/TestCondition Min. Typ. Max. - - 4.7 °C/W - Thermal resistance, junction - ambient RthJA - 35 62 Device on 40mm*40mm*1.5 epoxy PCB FR4 with 6cm2 (one layer 70µm °C/W thick) copper area for drain connection and cooling. PCB is vertical without blown air. Soldering temperature, wavesoldering only allowed at leads - - 260 °C Tsold reflow MSL1 1) Limited by Tj max. Maximum duty cycle D=0.75 Pulse width tp limited by Tj,max 3) VDClink=400V;VDS,peak<V(BR)DSS;identicallowsideandhighsideswitchwithidenticalRG 2) Final Data Sheet 4 Rev.2.0,2014-07-08 650VCoolMOS™C6PowerTransistor IPL65R1K5C6S 4Electricalcharacteristics Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA 3 3.50 V VDS=VGS,ID=0.1mA - 10 1 - µA VDS=650V,VGS=0V,Tj=25°C VDS=650V,VGS=0V,Tj=150°C IGSS - - 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 1.35 3.51 1.50 - Ω VGS=10V,ID=1A,Tj=25°C VGS=10V,ID=1A,Tj=150°C Gate resistance RG - 6.5 - Ω f=1MHz,opendrain Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 650 - Gate threshold voltage V(GS)th 2.50 Zero gate voltage drain current IDSS Gate-source leakage curent Table5Dynamiccharacteristics Parameter Symbol Input capacitance Values Min. Typ. Max. Ciss - 225 - pF VGS=0V,VDS=100V,f=1MHz Output capacitance Coss - 18 - pF VGS=0V,VDS=100V,f=1MHz Effective output capacitance, energy related1) Co(er) - 10 - pF VGS=0V,VDS=0...520V Effective output capacitance, time related2) Co(tr) - 42 - pF ID=constant,VGS=0V,VDS=0...520V Turn-on delay time td(on) - 7.7 - ns VDD=400V,VGS=10V,ID=1.5A, RG=10.2Ω Rise time tr - 5.9 - ns VDD=400V,VGS=10V,ID=1.5A, RG=10.2Ω Turn-off delay time td(off) - 33 - ns VDD=400V,VGS=10V,ID=1.5A, RG=10.2Ω Fall time tf - 18.2 - ns VDD=400V,VGS=10V,ID=1.5A, RG=10.2Ω Unit Note/TestCondition Table6Gatechargecharacteristics Parameter Symbol Gate to source charge Values Min. Typ. Max. Qgs - 1.3 - nC VDD=520V,ID=1.5A,VGS=0to10V Gate to drain charge Qgd - 5.8 - nC VDD=520V,ID=1.5A,VGS=0to10V Gate charge total Qg - 11 - nC VDD=520V,ID=1.5A,VGS=0to10V Gate plateau voltage Vplateau - 5.4 - V VDD=520V,ID=1.5A,VGS=0to10V 1) Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to80%V(BR)DSS Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to80%V(BR)DSS 2) Final Data Sheet 5 Rev.2.0,2014-07-08 650VCoolMOS™C6PowerTransistor IPL65R1K5C6S Table7Reversediodecharacteristics Parameter Symbol Diode forward voltage Values Unit Note/TestCondition - V VGS=0V,IF=1.5A,Tf=25°C 200 - ns VR=400V,IF=1.5A,diF/dt=100A/µs - 0.9 - µC VR=400V,IF=1.5A,diF/dt=100A/µs - 8 - A VR=400V,IF=1.5A,diF/dt=100A/µs Min. Typ. Max. VSD - 0.9 Reverse recovery time trr - Reverse recovery charge Qrr Peak reverse recovery current Irrm Final Data Sheet 6 Rev.2.0,2014-07-08 650VCoolMOS™C6PowerTransistor IPL65R1K5C6S 5Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Safeoperatingarea 102 30 25 101 1 µs 20 10 µs ID[A] Ptot[W] 100 15 100 µs 10-1 1 ms 10 10-2 5 10 ms DC 0 0 25 50 75 100 125 10-3 150 100 101 TC[°C] 102 103 VDS[V] Ptot=f(TC) ID=f(VDS);TC=25°C;D=0;parameter:tp Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 2 101 10 0.5 101 0.2 1 µs 100 100 ZthJC[K/W] ID[A] 10 µs 100 µs 10-1 1 ms 0.1 0.05 0.02 10-1 0.01 single pulse 10-2 10 ms DC 10-3 100 101 102 103 10-2 10-5 10-4 VDS[V] 10-2 10-1 tp[s] ID=f(VDS);TC=80°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tP);parameter:D=tp/T 7 Rev.2.0,2014-07-08 650VCoolMOS™C6PowerTransistor IPL65R1K5C6S Diagram5:Typ.outputcharacteristics Diagram6:Typ.outputcharacteristics 10 6 20 V 10 V 9 20 V 10 V 8V 5 8 8V 7 4 7V 3 6V 7V ID[A] ID[A] 6 5 4 3 6V 2 5.5 V 5V 1 4.5 V 5V 1 0 5.5 V 2 4.5 V 0 5 10 15 0 20 0 5 10 VDS[V] 15 20 VDS[V] ID=f(VDS);Tj=25°C;parameter:VGS ID=f(VDS);Tj=125°C;parameter:VGS Diagram7:Typ.drain-sourceon-stateresistance Diagram8:Drain-sourceon-stateresistance 5.6 4.5 4.0 10 V 5.1 5.5 V 4.6 6V 3.5 6.5 V 7V 4.1 3.6 RDS(on)[Ω] RDS(on)[Ω] 3.0 20 V 2.5 98% 2.0 typ 1.5 3.1 1.0 2.6 2.1 0.5 0 2 4 6 0.0 -50 -25 0 25 ID[A] RDS(on)=f(ID);Tj=125°C;parameter:VGS Final Data Sheet 50 75 100 125 150 Tj[°C] RDS(on)=f(Tj);ID=1A;VGS=10V 8 Rev.2.0,2014-07-08 650VCoolMOS™C6PowerTransistor IPL65R1K5C6S Diagram9:Typ.transfercharacteristics Diagram10:Typ.gatecharge 9 10 8 9 25 °C 8 7 120 V 7 6 480 V 6 4 VGS[V] ID[A] 5 150 °C 5 4 3 3 2 2 1 0 1 0 2 4 6 8 10 0 12 0 5 VGS[V] 10 15 Qgate[nC] ID=f(VGS);VDS=20V;parameter:Tj VGS=f(Qgate);ID=1.5Apulsed;parameter:VDD Diagram11:Forwardcharacteristicsofreversediode Diagram12:Avalancheenergy 1 10 30 25 100 125 °C EAS[mJ] IF[A] 20 25 °C 15 10 5 10-1 0.0 0.5 1.0 1.5 2.0 0 25 50 VSD[V] 100 125 150 Tj[°C] IF=f(VSD);parameter:Tj Final Data Sheet 75 EAS=f(Tj);ID=0.6A;VDD=50V 9 Rev.2.0,2014-07-08 650VCoolMOS™C6PowerTransistor IPL65R1K5C6S Diagram13:Drain-sourcebreakdownvoltage Diagram14:Typ.capacitances 104 740 720 103 700 Ciss C[pF] VBR(DSS)[V] 680 660 102 640 Coss 101 620 600 Crss 580 -75 -50 -25 0 25 50 75 100 125 150 175 100 0 100 Tj[°C] 200 300 400 500 VDS[V] VBR(DSS)=f(Tj);ID=1mA C=f(VDS);VGS=0V;f=1MHz Diagram15:Typ.Cossstoredenergy 1.60 1.40 1.20 Eoss[µJ] 1.00 0.80 0.60 0.40 0.20 0.00 0 100 200 300 400 500 VDS[V] Eoss=f(VDS) Final Data Sheet 10 Rev.2.0,2014-07-08 650VCoolMOS™C6PowerTransistor IPL65R1K5C6S 6TestCircuits Table8Diodecharacteristics Test circuit for diode characteristics Diode recovery waveform V ,I Rg1 VDS( peak) VDS VDS VDS trr IF Rg 2 tF tS dIF / dt QF IF t dIrr / dt trr =tF +tS Qrr = QF + QS Irrm Rg1 = Rg 2 IF 10 %Irrm QS Table9Switchingtimes Switching times test circuit for inductive load Switching times waveform VDS 90% VDS VGS VGS 10% td(on) ton tr td(off) tf toff Table10Unclampedinductiveload Unclamped inductive load test circuit Unclamped inductive waveform V(BR)DS ID VDS VDS Final Data Sheet 11 ID VDS Rev.2.0,2014-07-08 650VCoolMOS™C6PowerTransistor IPL65R1K5C6S 7PackageOutlines DOCUMENT NO. Z8B00172997 SCALE DIM A b b1 c D D1 E E1 E2 e K1 K2 L L1 N MILLIMETERS MIN 0.90 0.30 0.00 0.10 4.90 4.11 5.90 2.60 0.20 MAX 1.10 0.50 0.05 0.30 5.10 4.31 6.10 2.80 0.40 MIN 0.035 0.012 0.000 0.004 0.193 0.162 0.232 0.102 0.008 2.00 0.50 0.65 0.65 0.071 0.012 0.018 0.018 1.27 (BSC) 1.80 0.30 0.45 0.45 0 INCHES MAX 0.043 0.020 0.002 0.012 0.201 0.170 0.240 0.110 0.016 1 0 1 2mm EUROPEAN PROJECTION 0.05 (BSC) 8 0.079 0.020 0.026 0.026 8 ISSUE DATE 17-04-2014 REVISION 01 Figure1OutlineThinPAK5x6SMD,dimensionsinmm/inches Final Data Sheet 12 Rev.2.0,2014-07-08 650VCoolMOS™C6PowerTransistor IPL65R1K5C6S 8AppendixA Table11RelatedLinks • IFXCoolMOSWebpage:www.infineon.com • IFXDesigntools:www.infineon.com Final Data Sheet 13 Rev.2.0,2014-07-08 650VCoolMOS™C6PowerTransistor IPL65R1K5C6S RevisionHistory IPL65R1K5C6S Revision:2014-07-08,Rev.2.0 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2014-07-08 Release of final version WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: [email protected] Publishedby InfineonTechnologiesAG 81726München,Germany ©2014InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 14 Rev.2.0,2014-07-08