SPB16N50C3 Cool MOS™ Power Transistor Feature VDS @ Tjmax 560 V RDS(on) 0.28 Ω ID 16 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO263 • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance Type Package Ordering Code Marking SPB16N50C3 PG-TO263 Q67040-S4642 16N50C3 Maximum Ratings Parameter Symbol Value Unit SPB Continuous drain current A ID TC = 25 °C 16 TC = 100 °C 10 Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse ID puls 48 A EAS 460 mJ EAR 0.64 Avalanche current, repetitive tAR limited by Tjmax IAR 16 A Gate source voltage VGS ±20 V Gate source voltage AC (f >1Hz) VGS ±30 Power dissipation, TC = 25°C Ptot 160 Operating and storage temperature T j , Tstg ID=8, VDD=50V Avalanche energy, repetitive tAR limited by Tjmax2) ID=16A, VDD=50V Reverse diode dv/dt Rev. 2.4 6) dv/dt Page 1 W -55...+150 °C 15 V/ns 2005-11-07 SPB16N50C3 Maximum Ratings Parameter Symbol Drain Source voltage slope dv/dt Value Unit 50 V/ns Values Unit V DS = 400 V, ID = 16 A, Tj = 125 °C Thermal Characteristics Symbol Parameter min. typ. max. Thermal resistance, junction - case RthJC - - 0.78 Thermal resistance, junction - case, FullPAK RthJC_FP - - 3.7 Thermal resistance, junction - ambient, leaded RthJA - - 62 Thermal resistance, junction - ambient, FullPAK RthJA FP Tsold - - 80 - - 260 Soldering temperature, reflow soldering, MSL1 K/W °C 1.6 mm (0.063 in.) from case for 10s 3) Electrical Characteristics, at T j=25°C unless otherwise specified Parameter Symbol Conditions Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA Drain-Source avalanche V(BR)DS VGS=0V, ID=16A Values Unit min. typ. max. 500 - - - 600 - 2.1 3 3.9 V breakdown voltage Gate threshold voltage VGS(th) ID=675µA, VGS=VDS Zero gate voltage drain current I DSS VDS=500V, VGS=0V, Gate-source leakage current I GSS Drain-source on-state resistance RDS(on) Gate input resistance Rev. 2.4 RG µA Tj=25°C - 0.1 1 Tj=150°C - - 100 VGS=20V, VDS=0V - - 100 Ω VGS=10V, ID=10A Tj=25°C - 0.25 0.28 Tj=150°C - 0.68 - f=1MHz, open drain - 1.5 - Page 2 nA 2005-11-07 SPB16N50C3 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. - 14 - S pF Characteristics Transconductance g fs V DS≥2*I D*RDS(on)max, ID=10A Input capacitance Ciss V GS=0V, V DS=25V, - 1600 - Output capacitance Coss f=1MHz - 800 - Reverse transfer capacitance Crss - 30 - - 64 - - 124 - Effective output capacitance,4) Co(er) V GS=0V, energy related V DS=0V to 400V Effective output capacitance,5) Co(tr) time related Turn-on delay time td(on) V DD=380V, V GS=0/10V, - 10 - Rise time tr ID=16A, RG =4.3Ω - 8 - Turn-off delay time td(off) - 50 - Fall time tf - 8 - - 7 - - 36 - - 66 - - 5 - ns Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg VDD=380V, ID=16A VDD=380V, ID=16A, nC VGS=0 to 10V Gate plateau voltage V(plateau) VDD=380V, ID=16A V 1Limited only by maximum temperature 2Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f. 3Soldering temperature for TO-263: 220°C, reflow 4C o(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V DSS. 5C o(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. 6I <=I , di/dt<=400A/us, V SD D DClink=400V, Vpeak<VBR, DSS, Tj<Tj,max. Identical low-side and high-side switch. Rev. 2.4 Page 3 2005-11-07 SPB16N50C3 Electrical Characteristics Parameter Symbol Inverse diode continuous IS Conditions Values Unit min. typ. max. - - 16 - - 48 TC=25°C A forward current Inverse diode direct current, ISM pulsed Inverse diode forward voltage VSD VGS=0V, IF=IS - 1 1.2 V Reverse recovery time trr VR=380V, IF=IS , - 420 - ns Reverse recovery charge Qrr diF/dt=100A/µs - 7 - µC Peak reverse recovery current Irrm - 40 - A Peak rate of fall of reverse dirr /dt - 1100 - A/µs Tj=25°C recovery current Typical Transient Thermal Characteristics Symbol Value Unit Symbol SPB Rth1 0.012 Rth2 Value Unit SPB K/W Cth1 0.0002495 0.023 Cth2 0.0009406 Rth3 0.043 Cth3 0.001298 Rth4 0.149 Cth4 0.00362 Rth5 0.17 Cth5 0.009484 Rth6 0.069 Cth6 0.077 Tj R th1 R th,n T case Ws/K E xternal H eatsink P tot (t) C th1 C th2 C th,n T am b Rev. 2.4 Page 4 2005-11-07 SPB16N50C3 1 Power dissipation 2 Power dissipation FullPAK Ptot = f (TC) Ptot = f (TC) 170 SPP16N50C3 36 W W 140 28 Ptot Ptot 120 100 24 20 80 16 60 12 40 8 20 4 0 0 20 40 60 80 100 120 °C 0 0 160 20 40 60 80 100 120 TC 160 TC 3 Safe operating area 4 Safe operating area FullPAK ID = f ( V DS ) ID = f (VDS) parameter : D = 0 , TC =25°C parameter: D = 0, TC = 25°C 10 °C 2 10 2 10 1 10 1 ID A ID A 10 0 10 -1 10 -2 0 10 Rev. 2.4 10 0 tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC 10 1 10 -1 10 2 V VDS 10 3 Page 5 10 -2 0 10 tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms tp = 10 ms DC 10 1 10 2 10 V VDS 2005-11-07 3 SPB16N50C3 5 Transient thermal impedance 6 Transient thermal impedance FullPAK ZthJC = f (t p) ZthJC = f (t p) parameter: D = tp/T parameter: D = tp/t 10 1 10 1 K/W K/W 10 0 ZthJC ZthJC 10 0 10 -1 10 -2 10 -4 -7 10 10 -6 10 -5 10 -4 10 -3 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 10 -2 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 10 -3 10 -1 10 -3 s tp 10 10 -4 -7 -6 -5 -4 -3 -2 -1 10 10 10 10 10 10 10 -1 tp 7 Typ. output characteristic 8 Typ. output characteristic ID = f (VDS); Tj=25°C ID = f (VDS); Tj=150°C parameter: tp = 10 µs, VGS parameter: tp = 10 µs, VGS 35 60 A 20V 7V 6.5V A 20V 7V 6V 25 40 6V ID ID 1 s 10 5V 20 30 5.5V 15 4.5V 20 10 5V 4V 10 0 0 5 4.5V 5 10 15 V 25 VDS Rev. 2.4 0 0 5 10 15 V 25 VDS Page 6 2005-11-07 SPB16N50C3 9 Typ. drain-source on resistance 10 Drain-source on-state resistance RDS(on)=f(ID) RDS(on) = f (Tj) parameter: Tj=150°C, VGS parameter : ID = 10 A, VGS = 10 V 2 1.6 SPP16N50C3 Ω 4V 4.5V 5V 6V 1.2 RDS(on) RDS(on) Ω 8V 20V 1.2 1 0.8 0.8 0.6 0.4 98% 0.4 typ 0.2 0 0 5 10 15 A 20 0 -60 30 -20 20 60 100 ID 180 Tj 11 Typ. transfer characteristics 12 Typ. gate charge ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max VGS = f (Q Gate) parameter: ID = 16 A pulsed parameter: tp = 10 µs 60 16 A SPP16N50C3 V 50 Tj = 25°C 45 12 VGS 40 ID °C 35 Tj = 150°C 30 0,2 VDS max 10 0,8 VDS max 8 25 6 20 15 4 10 2 5 0 0 Rev. 2.4 1 2 3 4 5 6 7 8 V 10 VGS Page 7 0 0 10 20 30 40 50 60 70 80 nC 100 Q Gate 2005-11-07 SPB16N50C3 13 Forward characteristics of body diode 14 Avalanche SOA IF = f (VSD) IAR = f (tAR) parameter: Tj , tp = 10 µs par.: Tj ≤ 150 °C 2 SPP16N50C3 10 16 A A 12 1 IF IAR 10 10 Tj(start) = 25°C 8 6 10 0 Tj = 25 °C typ 4 Tj = 150 °C typ Tj = 25 °C (98%) 2 Tj = 150 °C (98%) 10 -1 0 0.4 0.8 1.2 1.6 2 Tj(start) = 125°C 2.4 V 0 -3 10 3 10 -2 10 -1 10 0 10 1 10 2 µs 10 t AR VSD 15 Avalanche energy 16 Drain-source breakdown voltage EAS = f (Tj) V(BR)DSS = f (Tj) 4 par.: ID = 8 , V DD = 50 V 0.5 600 SPP16N50C3 V V(BR)DSS EAS mJ 0.3 570 560 550 540 530 520 0.2 510 500 490 0.1 480 470 460 0 20 Rev. 2.4 40 60 80 100 120 160 °C Tj Page 8 450 -60 -20 20 60 100 °C 180 Tj 2005-11-07 SPB16N50C3 17 Avalanche power losses 18 Typ. capacitances PAR = f (f ) C = f (VDS) parameter: E AR=0.64mJ parameter: V GS=0V, f=1 MHz 10 4 450 pF W Ciss 10 3 300 C PAR 350 250 10 2 Coss 200 150 10 1 100 Crss 50 0 2 10 10 3 10 4 10 5 6 Hz 10 10 0 0 100 200 300 V 500 VDS f 19 Typ. Coss stored energy Eoss=f(VDS) 9 µJ Eoss 7 6 5 4 3 2 1 0 0 100 200 300 V 500 VDS Rev. 2.4 Page 9 2005-11-07 SPB16N50C3 Definition of diodes switching characteristics Rev. 2.4 Page 10 2005-11-07 63%161& PG-TO263-3-2, PG-TO263-3-5, PG-TO263-3-22 Rev. 2.4 PDJH 511-07 SPB16N50C3 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.4 Page 12 2005-11-07