SPW12N50C3 Final data Cool MOS™ Power Transistor Feature VDS @ Tjmax 560 V RDS(on) 0.38 Ω ID 11.6 A • New revolutionary high voltage technology • Ultra low gate charge P-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance Type SPW12N50C3 Package P-TO247 Ordering Code Q67040-S4580 Marking 12N50C3 Maximum Ratings Parameter Symbol Continuous drain current ID Value Unit A TC = 25 °C 11.6 TC = 100 °C 7 Pulsed drain current, tp limited by Tjmax I D puls 34.8 Avalanche energy, single pulse EAS 340 Avalanche energy, repetitive tAR limited by Tjmax1) EAR 0.6 mJ I D = 5.5 A, VDD = 50 V I D = 11.6 A, VDD = 50 V Avalanche current, repetitive tAR limited by Tjmax I AR Reverse diode dv/dt dv/dt 11.6 6 A V/ns IS=11.6A, VDS=480V, T j=125°C V Gate source voltage VGS ±20 Gate source voltage AC (f >1Hz) VGS ±30 Power dissipation, TC = 25°C Ptot 125 W Operating and storage temperature T j , T stg -55... +150 °C Page 1 2003-06-30 SPW12N50C3 Final data Maximum Ratings Parameter Symbol Drain Source voltage slope dv/dt Value Unit 50 V/ns Values Unit V DS = 400 V, ID = 11.6 A, Tj = 125 °C Thermal Characteristics Symbol Parameter min. typ. max. Thermal resistance, junction - case RthJC - - 1 Thermal resistance, junction - ambient, leaded RthJA - - 62 SMD version, device on PCB: RthJA @ min. footprint - - 62 @ 6 cm2 cooling area 2) - 35 - - - 260 Soldering temperature, Tsold K/W °C 1.6 mm (0.063 in.) from case for 10s Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions Drain-source breakdown voltage V(BR)DSS V GS=0V, ID=0.25mA Drain-Source avalanche V(BR)DS V GS=0V, ID=11.6A Values Unit min. typ. max. 500 - - - 600 - 2.1 3 3.9 V breakdown voltage Gate threshold voltage VGS(th) ID=500µΑ, VGS=VDS Zero gate voltage drain current I DSS V DS=500V, VGS=0V, Gate-source leakage current I GSS Drain-source on-state resistance RDS(on) Gate input resistance RG µA Tj=25°C, - 0.1 1 Tj=150°C - - 100 V GS=20V, VDS=0V - - 100 Ω V GS=10V, ID=7A, Tj=25°C - 0.34 0.38 Tj=150°C - 0.92 - f=1MHz, open Drain - 1.4 - Page 2 nA 2003-06-30 SPW12N50C3 Final data Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Transconductance Symbol g fs Conditions V DS≥2*I D*RDS(on)max, Values Unit min. typ. max. - 8 - S pF ID=7A Input capacitance Ciss V GS=0V, V DS=25V, - 1200 - Output capacitance Coss f=1MHz - 400 - Reverse transfer capacitance Crss - 30 - - 45 - - 92 - Effective output capacitance,3) Co(er) V GS=0V, energy related V DS=0V to 400V Effective output capacitance,4) Co(tr) pF time related Turn-on delay time td(on) V DD=380V, V GS=0/10V, - 10 - Rise time tr ID=11.6A, R G=6.8Ω - 8 - Turn-off delay time td(off) - 45 - Fall time tf - 8 - - 5 - - 26 - - 49 - - 5 - Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg VDD=400V, ID=11.6A VDD=400V, ID=11.6A, ns nC VGS=0 to 10V Gate plateau voltage V(plateau) VDD=400V, ID=11.6A V 1Repetitve avalanche causes additional power losses that can be calculated as P =EAR*f. AV 2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. 3C is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V o(er) DSS. 4C o(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Page 3 2003-06-30 SPW12N50C3 Final data Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Symbol Parameter Inverse diode continuous IS Conditions TC=25°C Values Unit min. typ. max. - - 11.6 - - 34.8 A forward current Inverse diode direct current, ISM pulsed Inverse diode forward voltage VSD VGS=0V, IF=IS - 1 1.2 V Reverse recovery time trr VR=400V, IF=IS , - 380 - ns Reverse recovery charge Qrr diF/dt=100A/µs - 5.5 - µC Peak reverse recovery current Irrm - 38 - A Peak rate of fall of reverse dirr /dt - 1100 - A/µs recovery current Typical Transient Thermal Characteristics Symbol Value Unit Symbol Value typ. Unit typ. Thermal resistance Thermal capacitance R th1 0.015 R th2 Cth1 0.0001878 0.03 Cth2 0.0007106 R th3 0.056 Cth3 0.000988 R th4 0.197 Cth4 0.002791 R th5 0.216 Cth5 0.007285 R th6 0.083 Cth6 0.063 Tj K/W R th1 R th,n T case Ws/K E xternal H eatsink P tot (t) C th1 C th2 C th,n T am b Page 4 2003-06-30 SPW12N50C3 Final data 1 Power dissipation 2 Safe operating area Ptot = f (TC) ID = f ( V DS ) parameter : D = 0 , T C=25°C 140 10 2 SPW12N50C3 W A 120 110 10 1 90 ID Ptot 100 80 10 0 70 tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC 60 50 40 10 -1 30 20 10 0 0 20 40 60 80 100 120 °C 10 -2 0 10 160 10 1 10 2 TC 3 Safe operating area FullPAK 4 Transient thermal impedance ID = f (VDS) ZthJC = f (t p) parameter: D = 0, TC = 25°C parameter: D = tp/T 10 2 10 V VDS 3 10 1 K/W A 10 0 ID ZthJC 10 1 10 -1 10 0 10 -1 10 -2 0 10 tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms tp = 10 ms DC 10 1 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 10 -2 10 -3 10 2 V VDS 10 3 Page 5 10 -4 -7 10 10 -6 10 -5 10 -4 10 -3 s tp 10 2003-06-30 -1 SPW12N50C3 Final data 5 Transient thermal impedance FullPAK 6 Typ. output characteristic ZthJC = f (t p) ID = f (VDS); Tj=25°C parameter: D = tp/t parameter: tp = 10 µs, VGS 10 1 40 K/W 10 0 7V 32 28 ID ZthJC 20V 10V 8V A 10 -1 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 10 -2 6.5V 24 20 6V 16 5.5V 12 10 -3 8 5V 4 10 -4 -7 -6 -5 -4 -3 -2 -1 10 10 10 10 10 10 10 s 10 tp 4.5V 0 0 1 5 10 15 VDS 7 Typ. output characteristic 8 Typ. drain-source on resistance ID = f (VDS); Tj=150°C RDS(on)=f(ID) parameter: tp = 10 µs, VGS parameter: Tj=150°C, V GS 2 22 20V 8V 7.5V 7V A Ω 6V RDS(on) 18 16 ID 25 V 14 1.6 4V 4.5V 5V 6V 5.5V 1.4 5.5V 12 1.2 10 5V 8 6 1 4.5V 0.8 4V 0.6 4 2 0 0 5 10 15 V 25 VDS Page 6 0.4 0 6.5V 8V 20V 2 4 6 8 10 12 14 16 A 20 ID 2003-06-30 SPW12N50C3 Final data 9 Drain-source on-state resistance 10 Typ. transfer characteristics RDS(on) = f (Tj) ID= f ( VGS ); V DS≥ 2 x ID x RDS(on)max parameter : ID = 7 A, VGS = 10 V parameter: tp = 10 µs 2.1 SPW12N50C3 40 Ω A 25°C 1.8 28 1.4 ID RDS(on) 32 1.6 1.2 24 150°C 20 1 16 0.8 12 0.6 98% 0.4 8 typ 4 0.2 0 -60 -20 20 60 100 °C 0 0 180 1 2 3 4 5 6 7 Tj 8 V 10 VGS 11 Typ. gate charge 12 Forward characteristics of body diode VGS = f (QGate) IF = f (VSD) parameter: ID = 11.6 A pulsed parameter: Tj , tp = 10 µs 16 10 2 SPW12N50C3 V SPW12N50C3 A 10 10 1 0.2 VDS max IF VGS 12 0.8 VDS max 8 6 10 0 Tj = 25 °C typ 4 Tj = 150 °C typ Tj = 25 °C (98%) 2 0 0 Tj = 150 °C (98%) 10 20 30 40 50 nC 70 QGate 10 -1 0 0.4 0.8 1.2 1.6 2 2.4 V 3 VSD Page 7 2003-06-30 SPW12N50C3 Final data 13 Avalanche SOA 14 Avalanche energy IAR = f (tAR) EAS = f (Tj) par.: Tj ≤ 150 °C par.: ID = 5.5 A, V DD = 50 V 350 11 A mJ 9 250 EAS IAR 8 7 200 6 5 Tj (START) =25°C 150 4 3 100 Tj (START) =125°C 2 50 1 0 -3 10 10 -2 10 -1 10 0 10 1 10 2 0 20 4 µs 10 tAR 40 60 80 100 120 °C 160 Tj 15 Drain-source breakdown voltage 16 Avalanche power losses V(BR)DSS = f (Tj) PAR = f (f ) parameter: E AR=0.6mJ 600 SPW12N50C3 300 V 570 560 PAR V(BR)DSS W 550 540 530 200 150 520 510 100 500 490 480 50 470 460 450 -60 -20 20 60 100 °C 180 Tj 0 4 10 10 5 Hz 10 f Page 8 2003-06-30 6 SPW12N50C3 Final data 17 Typ. capacitances 18 Typ. Coss stored energy C = f (VDS) Eoss=f(VDS) parameter: V GS=0V, f=1 MHz 10 4 6 pF Ciss µJ 10 2 Eoss C 10 3 Coss 4 3 10 1 2 Crss 10 0 1 10 -1 0 100 200 300 V 500 VDS 0 0 100 200 300 V 500 VDS Definition of diodes switching characteristics Page 9 2003-06-30 SPW12N50C3 Final data P-TO-247-3-1 15.9 5.03 20˚ 5˚ D 5.94 4.37 2.03 6.17 20.9 9.91 6.35 ø3.61 7 1.75 41.22 2.97 x 0.127 16 D 1.14 0.243 1.2 0.762 MAX. 2 2.4 +0.05 2.92 5.46 General tolerance unless otherwise specified: Leadframe parts: ±0.05 Package parts: ±0.12 Page 10 2003-06-30 Final data SPW12N50C3 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 11 2003-06-30