VISHAY 16CTT100

VS-16CTT100
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Vishay Semiconductors
High Performance Generation 5.0 Schottky Rectifier, 2 x 8 A
FEATURES
Base 2
common
cathode
• 175 °C high performance Schottky diode
• Very low forward voltage drop
• Extremely low reverse leakage
• Optimized VF vs. IR trade off for high efficiency
Anode
TO-220AB
• Increased ruggedness for reverse avalanche
capability
Anode
2
1 Common 3
cathode
• RBSOA available
• Negligible switching losses
• Submicron trench technology
PRODUCT SUMMARY
• Compliant to RoHS Directive 2002/95/EC
Package
TO-220AB
IF(AV)
2x8A
VR
100 V
VF at IF
0.58 V
IRM max.
4 mA at 125 °C
TJ max.
175 °C
Diode variation
Common cathode
EAS
36 mJ
• Designed and qualified according to JEDEC-JESD47
APPLICATIONS
•
•
•
•
•
•
•
•
High efficiency SMPS
Automotive
High frequency switching
Output rectification
Reverse battery protection
Freewheeling
DC/DC systems
Increased power density systems
MAJOR RATINGS AND CHARACTERISTICS
CHARACTERISTICS
SYMBOL
VALUES
VRRM
UNITS
100
VF
8 Apk, TJ = 125 °C (typical, per leg)
TJ
Range
V
0.55
- 55 to 175
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
SYMBOL
TEST CONDITIONS
VS-16CTT100
UNITS
VR
TJ = 25 °C
100
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average
forward current
SYMBOL
per leg
per device
IF(AV)
TEST CONDITIONS
50 % duty cycle at TC = 163 °C, rectangular waveform
5 µs sine or 3 µs rect. pulse
Following any rated load
condition and with rated
VRRM applied
Maximum peak one cycle
non-repetitive surge current per leg
IFSM
Non-repetitive avalanche energy per leg
EAS
TJ = 25 °C, IAS = 1.5 A, L = 60 mH
Repetitive avalanche current per leg
IAR
Limited by frequency of operation and time pulse duration
so that TJ < TJ max. IAS at TJ max. as a function of time pulse
See fig. 8
Revision: 10-Aug-11
10 ms sine or 6 ms rect. pulse
VALUES
UNITS
8
16
850
A
210
67
mJ
IAS at
TJ max.
A
Document Number: 94530
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VS-16CTT100
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Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
8A
Forward voltage drop per leg
VFM (1)
16 A
8A
16 A
Reverse leakage current per leg
IRM (1)
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
VR = Rated VR
TYP.
MAX.
UNITS
-
0.72
-
0.85
-
0.58
-
0.69
-
65
μA
-
4
mA
V
Junction capacitance per leg
CT
VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C
520
-
pF
Series inductance per leg
LS
Measured lead to lead 5 mm from package body
8.0
-
nH
-
10 000
V/μs
Maximum voltage rate of change
dV/dt
Rated VR
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and
storage temperature range
TEST CONDITIONS
TJ, TStg
Maximum thermal resistance,
junction to case per leg
Maximum thermal resistance,
junction to case per device
Typical thermal resistance,
case to heatsink
Marking device
Revision: 10-Aug-11
UNITS
- 55 to 175
°C
2
RthJC
DC operation
°C/W
1
RthCS
Mounting surface, smooth and greased
Approximate weight
Mounting torque
VALUES
0.5
2
g
0.07
oz.
minimum
6 (5)
kgf · cm
maximum
12 (10)
Case style TO-220AB (JEDEC)
(lbf · in)
16CTT100
Document Number: 94530
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-16CTT100
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Vishay Semiconductors
100
100
Reverse Current - IR (mA)
175°C
150°C
125°C
1
100°C
0.1
75°C
50°C
0.01
25°C
0.001
0.0001
0
20
40
60
80
100
Reverse Voltage - VR (V)
10
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
1000
Tj = 125°C
Junction Capacitance - CT (pF)
Instantaneous Forward Current - IF (A)
Tj = 175°C
10
Tj = 25°C
100
1
0.0
0.5
1.0
1.5
2.0
Forward Voltage Drop - VFM (V)
10
0
20
40
60
80
100
120
Reverse Voltage - VR (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Thermal Impedance ZthJC (°C/W)
10
D = 0.75
D = 0.5
1
D = 0.33
D = 0.25
D = 0.2
0.1
Single Pulse
(Thermal Resistance)
0.01
0.001
1E-05
1E-04
1E-03
1E-02
1E-01
t1, Rectangular Pulse Duration (Seconds)
1E+00
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
Revision: 10-Aug-11
Document Number: 94530
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-16CTT100
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Vishay Semiconductors
7
170
Average Power Loss - (Watts)
Allowable Case Temperature (°C)
180
DC
160
Square wave (D=0.50)
80% rated Vr applied
180°
120°
90°
60°
30°
6
5
4
DC
3
2
1
see note (1)
0
150
0
2
4
6
8
10
0
12
4
6
8
10
12
Average Forward Current - IF(AV) (A)
Average Forward Current - IF(AV)(A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Non-Repetitive Surge Current - IFSM (A)
2
Fig. 6 - Forward Power Loss Characteristics
1000
100
10
100
1000
10000
Square Wave Pulse Duration - tp (microsec)
Fig. 7 - Maximum Non-Repetitive Surge Current
Note
(1) Formula used: T = T - (Pd + Pd
C
J
REV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
Revision: 10-Aug-11
Document Number: 94530
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For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-16CTT100
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Vishay Semiconductors
Avalanche Current (A)
100
Tj = 25°C
10
Tj = 125°C
1
Tj = 175°C
0.1
1
10
100
Rectangular Pulse Duration ( μsec)
Fig. 8 - Reverse Bias Safe Operating Area (Avalanche Current vs. Rectangular Pulse Duration)
Avalanche Energy (mJ)
100
Tj = 25°C
10
Tj = 125°C
Tj = 175°C
1
1
10
100
Rectangular Pulse Duration ( μsec)
Fig. 9 - Reverse Bias Safe Operating Area (Avalanche Energy vs. Rectangular Pulse Duration)
Revision: 10-Aug-11
Document Number: 94530
5
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-16CTT100
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
16
C
T
T
100
1
2
3
4
5
6
1
-
Vishay Semiconductors product
2
-
Current rating (16 A)
3
-
Circuit configuration:
C = Common cathode
4
-
Package:
T = TO-220
5
-
T = Trench
6
-
Voltage code (100 V)
Tube standard pack quantity: 50 pieces
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95222
Part marking information
www.vishay.com/doc?95225
SPICE model
www.vishay.com/doc?95229
Revision: 10-Aug-11
Document Number: 94530
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For technical questions within your region: [email protected], [email protected], [email protected]ay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
TO-220AB
DIMENSIONS in millimeters and inches
A
(6)
E
E2
ØP
0.014 M B A M
(7)
A
B
Seating
plane
A
Thermal pad
(E)
A1
1
Q
(6)
D
(H1)
H1
(7)
C
D2 (6)
(6) D
2 3
D
L1 (2)
C
Detail B
D1
3xb
1
2
3
3 x b2
Detail B
C
E1 (6)
L
Base metal
View A - A
c
Plating
c1 (4)
c
A
2x e
A2
e1
(b, b2)
b1, b3
(4)
Section C - C and D - D
0.015 M B A M
Lead assignments
Lead tip
Diodes
Conforms to JEDEC outline TO-220AB
1. - Anode/open
2. - Cathode
3. - Anode
SYMBOL
MILLIMETERS
MIN.
MAX.
4.25
4.65
1.14
1.40
2.56
2.92
0.69
1.01
0.38
0.97
1.20
1.73
1.14
1.73
0.36
0.61
0.36
0.56
14.85
15.25
8.38
9.02
11.68
12.88
INCHES
MIN.
MAX.
0.167
0.183
0.045
0.055
0.101
0.115
0.027
0.040
0.015
0.038
0.047
0.068
0.045
0.068
0.014
0.024
0.014
0.022
0.585
0.600
0.330
0.355
0.460
0.507
NOTES
A
A1
A2
b
b1
4
b2
b3
4
c
c1
4
D
3
D1
D2
6
Notes
(1) Dimensioning and tolerancing as per ASME Y14.5M-1994
(2) Lead dimension and finish uncontrolled in L1
(3) Dimension D, D1 and E do not include mold flash. Mold flash
shall not exceed 0.127 mm (0.005") per side. These dimensions
are measured at the outermost extremes of the plastic body
(4) Dimension b1, b3 and c1 apply to base metal only
(5) Controlling dimensions: inches
(6) Thermal pad contour optional within dimensions E, H1, D2 and
E1
Document Number: 95222
Revision: 08-Mar-11
SYMBOL
E
E1
E2
e
e1
H1
L
L1
ØP
Q

(7)
(8)
MILLIMETERS
MIN.
MAX.
10.11
10.51
6.86
8.89
0.76
2.41
2.67
4.88
5.28
6.09
6.48
13.52
14.02
3.32
3.82
3.54
3.73
2.60
3.00
90° to 93°
INCHES
MIN.
MAX.
0.398
0.414
0.270
0.350
0.030
0.095
0.105
0.192
0.208
0.240
0.255
0.532
0.552
0.131
0.150
0.139
0.147
0.102
0.118
90° to 93°
NOTES
3, 6
6
7
6, 7
2
Dimensions E2 x H1 define a zone where stamping and
singulation irregularities are allowed
Outline conforms to JEDEC TO-220, except A2 (maximum) and
D2 (minimum) where dimensions are derived from the actual
package outline
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
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Vishay
Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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Document Number: 91000
Revision: 11-Mar-11
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