VS-65PQ015PbF, VS-65PQ015-N3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 65 A FEATURES • 125 °C TJ operation (VR < 5 V) Base cathode 2 • Single diode configuration • Optimized for OR-ing applications • Ultralow forward voltage drop • Guard ring for enhanced ruggedness and long term reliability 1 Anode TO-247AC • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance 3 Anode • Compliant to RoHS Directive 2002/95/EC • Designed and qualified according to JEDEC-JESD47 PRODUCT SUMMARY Package TO-247AC IF(AV) 65 V VR 15 V VF at IF 0.46 V IRM max. 870 mA at 100 °C TJ max. 125 °C Diode variation Single die EAS 9 mJ • Halogen-free according to IEC 61249-2-21 definition (-N3 only) DESCRIPTION The VS-65PQ015... Schottky rectifier module has been optimized for ultralow forward voltage drop specifically for the OR-ing of parallel power supplies. The proprietary barrier technology allows for reliable operation up to 125 °C junction temperature. Typical applications are in parallel switching power supplies, converters, reverse battery protection, and redundant power subsystems. MAJOR RATINGS AND CHARACTERISTICS CHARACTERISTICS SYMBOL IF(AV) Rectangular waveform VRRM IFSM tp = 5 μs sine VF 65 Apk, TJ = 125 °C TJ Range VALUES UNITS 65 A 15 V 1500 A 0.46 V - 55 to 125 °C VOLTAGE RATINGS PARAMETER Maximum DC reverse voltage SYMBOL VR TEST CONDITIONS VS-65PQ015PbF VS-65PQ015-N3 TJ = 100 °C 15 15 TJ = 125 °C 5 5 UNITS V ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average forward current IF(AV) Maximum peak one cycle non-repetitive surge current IFSM Non-repetitive avalanche energy EAS TJ = 25 °C, IAS = 2 A, L = 4.5 mH 9 mJ IAR Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.5 x VR typical 2 A Repetitive avalanche current Revision: 11-Oct-11 50 % duty cycle at TC = 83 °C, rectangular waveform 5 µs sine or 3 µs rect. pulse 10 ms sine or 6 ms rect. pulse Following any rated load condition and with rated VRRM applied 65 1500 A 400 Document Number: 94246 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-65PQ015PbF, VS-65PQ015-N3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS 65 A VFM (1) Forward voltage drop TJ = 25 °C 130 A 65 A TJ = 125 °C 130 A TJ = 125 °C IRM Reverse leakage current (1) VR = 5 V TJ = 25 °C VR = Rated VR TJ = 100 °C VF(TO) Threshold voltage TJ = TJ maximum Forward slope resistance rt Maximum junction capacitance CT VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C LS Measured lead to lead 5 mm from package body Typical series inductance Maximum voltage rate of change dV/dt Rated VR VALUES UNITS 0.50 0.71 V 0.46 0.76 1.2 A 18 mA 870 0.137 mV 4.9 m 4300 pF 8 nH 10 000 V/µs VALUES UNITS Note (1) Pulse width < 300 μs, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS Maximum junction temperature range TJ - 55 to 125 Maximum storage temperature range TStg - 55 to 150 Maximum thermal resistance, junction to case RthJC DC operation 0.8 Typical thermal resistance, case to heatsink RthCS Mounting surface, smooth and greased 0.3 °C/W Approximate weight Mounting torque Marking device Revision: 11-Oct-11 minimum maximum °C Non-lubricated threads Case style TO-247AC (JEDEC) 6 g 0.21 oz. 6 (5) kgf · cm (lbf · in) 12 (10) 65PQ015 Document Number: 94246 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-65PQ015PbF, VS-65PQ015-N3 www.vishay.com Vishay Semiconductors 1000 IR - Reverse Current (mA) IF - Instantaneous Forward Current (A) 1000 100 TJ = 125 °C TJ = 100 °C TJ = 25 °C J J 10 TJ = 100 °C 100 TJ = 75 °C TJ = 50 °C 10 TJ = 25 °C 1 1 0 0.5 1.0 1.5 2.0 0 2 4 6 8 10 12 14 16 VFM - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage CT - Junction Capacitance (pF) 10 000 TJ = 25 °C 1000 2 4 6 8 10 12 16 14 VR - Reverse Voltage (V) ZthJC - Thermal Impedance (°C/W) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 1 PDM t1 0.1 0.01 0.00001 0.0001 0.001 t2 D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 Single pulse (thermal resistance) 0.01 Notes: 1. Duty factor D = t1/t2 2. Peak TJ = PDM x ZthJC + TC 0.1 1 10 100 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Revision: 11-Oct-11 Document Number: 94246 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-65PQ015PbF, VS-65PQ015-N3 Vishay Semiconductors 80 150 Average Power Loss (W) Allowable Case Temperature (°C) www.vishay.com 120 DC 90 Square wave (D = 0.50) 5 V applied 60 30 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 60 40 RMS limit 20 DC See note (1) 0 0 0 20 40 60 80 0 100 20 40 60 80 100 IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 6 - Forward Power Loss Characteristics IFSM - Non-Repetitive Surge Current (A) IF(AV) - Average Forward Current (A) 10 000 At any rated load condition and with rated VRRM applied following surge 1000 100 10 100 1000 10 000 tp - Square Wave Pulse Duration (µs) Fig. 7 - Maximum Non-Repetitive Surge Current L D.U.T. IRFP460 Rg = 25 Ω Current monitor High-speed switch Freewheel diode + Vd = 25 V 40HFL40S02 Fig. 8 - Unclamped Inductive Test Circuit Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 5 V Revision: 11-Oct-11 Document Number: 94246 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-65PQ015PbF, VS-65PQ015-N3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 65 P Q 015 PbF 1 2 3 4 5 6 1 - Vishay Semiconductors product 2 - Current rating (65 = 65 A) 3 - Package: P = TO-247 4 - Schottky “Q” series 5 - Voltage code (015 = 15 V) 6 - Environmental digit PbF = Lead (Pb)-free and RoHS compliant -N3 = Halogen-free, RoHS compliant, and totally lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-65PQ015PbF 25 500 Antistatic plastic tube VS-65PQ015-N3 25 500 Antistatic plastic tube LINKS TO RELATED DOCUMENTS Dimensions Part marking information SPICE model Revision: 11-Oct-11 www.vishay.com/doc?95223 TO-247AC modified PbF www.vishay.com/doc?95226 TO-247AC modified -N3 www.vishay.com/doc?95007 www.vishay.com/doc?95306 Document Number: 94246 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors DIMENSIONS in millimeters and inches A A (3) (6) Ø P E B (2) R/2 N A2 S (Datum B) Ø K M DBM FP1 A D2 Q 2xR (2) D1 (4) D 1 4 D 3 2 Thermal pad (5) L1 C L A See view B 2 x b2 3xb 0.10 M C A M Planting (4) E1 0.01 M D B M View A - A C 2x e A1 b4 (b1, b3, b5) Lead assignments Base metal D DE (c) c1 E C C Diodes 1. - Anode/open 2. - Cathode 3. - Anode (b, b2, b4) (4) Section C - C, D - D, E - E SYMBOL A A1 A2 b b1 b2 b3 b4 b5 c c1 D D1 MILLIMETERS MIN. MAX. 4.65 5.31 2.21 2.59 1.50 2.49 0.99 1.40 0.99 1.35 1.65 2.39 1.65 2.37 2.59 3.43 2.59 3.38 0.38 0.86 0.38 0.76 19.71 20.70 13.08 - INCHES MIN. MAX. 0.183 0.209 0.087 0.102 0.059 0.098 0.039 0.055 0.039 0.053 0.065 0.094 0.065 0.094 0.102 0.135 0.102 0.133 0.015 0.034 0.015 0.030 0.776 0.815 0.515 - View B NOTES SYMBOL 3 4 D2 E E1 e FK L L1 N P P1 Q R S MILLIMETERS MIN. MAX. 0.51 1.30 15.29 15.87 13.72 5.46 BSC 2.54 14.20 16.10 3.71 4.29 7.62 BSC 3.56 3.66 6.98 5.31 5.69 4.52 5.49 5.51 BSC INCHES MIN. MAX. 0.020 0.051 0.602 0.625 0.540 0.215 BSC 0.010 0.559 0.634 0.146 0.169 0.3 0.14 0.144 0.275 0.209 0.224 1.78 0.216 0.217 BSC NOTES 3 Notes (1) Dimensioning and tolerancing per ASME Y14.5M-1994 (2) Contour of slot optional (3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Thermal pad contour optional with dimensions D1 and E1 (5) Lead finish uncontrolled in L1 (6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) Outline conforms to JEDEC outline TO-247 with exception of dimension c Revision: 16-Jun-11 Document Number: 95223 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Revision: 12-Mar-12 1 Document Number: 91000