VS-10UT10, VS-10WT10FN www.vishay.com Vishay Semiconductors High Performance Generation 5.0 Schottky Rectifier, 10 A FEATURES • 175 °C high performance Schottky diode • Very low forward voltage drop • Extremely low reverse leakage I-PAK (TO-251AA) D-PAK (TO-252AA) Base cathode 4 Base cathode 4 • Optimized VF vs. IR trade off for high efficiency • Increased ruggedness for reverse avalanche capability • RBSOA available 3 1 Anode 2 Anode Cathode 2 1 Cathode 3 Anode Anode • Negligible switching losses • Submicron trench technology • Compliant to RoHS Directive 2002/95/EC VS-10UT10 VS-10WT10FN • Designed and qualified according to JEDEC-JESD47 PRODUCT SUMMARY APPLICATIONS Package I-PAK (TO-251AA), D-PAK (TO-252AA) IF(AV) 10 A VR 100 V VF at IF 0.66 V IRM max. 4 mA at 125 °C TJ max. 175 °C Diode variation Single die EAS 54 mJ • High efficiency SMPS • High frequency switching • Output rectification • Reverse battery protection • Freewheeling • DC/DC systems • Increased power density systems MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS 100 V VRRM VF 10 Apk, TJ = 125 °C (typical) TJ Range 0.615 V - 55 to 175 °C VOLTAGE RATINGS PARAMETER Maximum DC reverse voltage SYMBOL VR TEST CONDITIONS VS-10UT10 VS-10WT10FN UNITS 100 V TJ = 25 °C ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS Maximum average forward current IF(AV) Maximum peak one cycle non-repetitive surge current IFSM Non-repetitive avalanche energy EAS TJ = 25 °C, IAS = 3 A, L = 12 mH IAR Limited by frequency of operation and time pulse duration so that TJ < TJ max. IAS at TJ max. as a function of time pulse (see fig. 8) Repetitive avalanche current 50 % duty cycle at TC = 159 °C, rectangular waveform 5 μs sine or 3 μs rect. pulse 10 ms sine or 6 ms rect. pulse Following any rated load condition and with rated VRRM applied (1) VALUES UNITS 10 A 610 A 110 54 mJ IAS at TJ max. A Note (1) Measured connecting 2 anode pins Revision: 02-Nov-11 Document Number: 94647 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-10UT10, VS-10WT10FN www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS 5A TJ = 25 °C 10 A VFM (1)(2) Forward voltage drop - UNITS 0.735 0.810 0.840 0.890 5A 0.530 - 0.615 0.660 0.730 0.770 - 50 μA TJ = 125 °C 20 A TJ = 25 °C IRM (1) MAX. 20 A 10 A Reverse leakage current TYP. 0.630 VR = Rated VR TJ = 125 °C V - 4 mA Junction capacitance CT VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C 400 - pF Series inductance LS Measured lead to lead 5 mm from package body 8.0 - nH - 10 000 V/μs Maximum voltage rate of change dV/dt Rated VR Notes (1) Pulse width < 300 μs, duty cycle < 2 % (2) Only 1 anode pin connected THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TEST CONDITIONS TJ, TStg Maximum thermal resistance, junction to case RthJC Typical thermal resistance, case to heatsink RthCS UNITS - 55 to 175 °C DC operation 2 °C/W 0.3 Approximate weight Marking device 0.3 g 0.01 oz. Case style I-PAK 10UT10 Case style D-PAK 10WT10FN 100 100 IR - Reverse Current (mA) IF - Instantaneous Forward Current (A) VALUES TJ = 175 °C 10 TJ = 125 °C TJ = 25 °C 1 0.2 175 °C 10 150 °C 125 °C 1 100 °C 0.1 75 °C 0.01 50 °C 25 °C 0.001 0.0001 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0 20 40 60 80 100 VFM - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 02-Nov-11 Document Number: 94647 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-10UT10, VS-10WT10FN www.vishay.com Vishay Semiconductors CT - Junction Capacitance (pF) 1000 100 10 0 20 40 60 80 100 VR - Reverse Voltage (V) ZthJC - Thermal Impedance (°C/W) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 10 1 D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 0.1 Single pulse (thermal resistance) 0.01 0.00001 0.0001 0.001 0.01 0.1 1 t1 - Rectangular Pulse Duration (s) 10 180 175 Average Power Loss (W) Allowable Case Temperature (°C) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics 170 DC 165 160 155 Square wave (D = 0.50) 80 % rated VR applied 150 180° 120° 90° 60° 30° 8 6 RMS limit 4 DC 2 See note (1) 0 145 0 2 4 6 8 10 12 14 16 0 3 6 9 12 15 IF(AV) Average Forward Current (A) IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 6 - Forward Power Loss Characteristics Revision: 02-Nov-11 Document Number: 94647 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-10UT10, VS-10WT10FN IFSM - Non-Repetitive Surge Current (A) www.vishay.com Vishay Semiconductors 1000 100 10 10 100 1000 10 000 tp - Square Wave Pulse Duration (µs) Fig. 7 - Maximum Non-Repetitive Surge Current Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR Avalanche Current (A) 100 TJ = 25 °C 10 TJ = 125 °C TJ = 175 °C 1 1 10 100 Rectangular Pulse Duration (µs) Fig. 8 - Reverse Bias Safe Operating Area (Avalanche Current vs. Rectangular Pulse Duration) Avalanche Energy (mJ) 100 10 TJ = 25 °C TJ = 125 °C TJ = 175 °C 1 1 10 100 Rectangular Pulse Duration (µs) Fig. 9 - Reverse Bias Safe Operating Area (Avalanche Energy vs. Rectangular Pulse Duration) Revision: 02-Nov-11 Document Number: 94647 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-10UT10, VS-10WT10FN www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 10 U T 10 FN TRL 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - Current rating (10 A) 3 - Package: U = I-PAK W = D-PAK 4 - T = Trench 5 - Voltage code (100 V) 6 - TO-252AA (D-PAK) 7 - D-PAK, I-PAK: None = Tube (75 pieces) D-PAK only: TR = Tape and reel TRL = Tape and reel (left oriented) TRR = Tape and reel (right oriented) LINKS TO RELATED DOCUMENTS Dimensions Part marking information I-PAK (TO-251AA) www.vishay.com/doc?95024 D-PAK (TO-252AA) www.vishay.com/doc?95448 I-PAK (TO-251AA) www.vishay.com/doc?95025 D-PAK (TO-252AA) www.vishay.com/doc?95059 Packaging information www.vishay.com/doc?95033 SPICE model www.vishay.com/doc?95026 Revision: 02-Nov-11 Document Number: 94647 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors I-PAK - S DIMENSIONS FOR I-PAK - S in millimeters E A b3 E1 c2 3 1 2 L L5 L4 H D D1 4 b2 e c e SYMBOL DIMENSIONAL REQUIREMENTS MIN. NOM. MAX. E 6.40 6.60 6.70 L 3.98 4.13 4.28 L4 0.66 0.76 0.86 L5 1.96 2.16 2.36 D 6.00 6.10 6.20 H 11.05 11.25 11.45 b 0.64 0.76 0.88 b2 0.77 0.84 1.14 b3 5.21 5.34 5.46 b4 0.41 0.51 0.61 e A Document Number: 95024 Revision: 24-May-11 b4 b 2.286 BSC 2.20 2.30 2.38 c 0.40 0.50 0.60 c2 0.40 0.50 0.60 D1 5.30 - - E1 4.40 - - For technical questions within your region, please contact one of the following: www.vishay.com [email protected], [email protected], [email protected] 1 This document is subject to change without notice. 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Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Revision: 12-Mar-12 1 Document Number: 91000