VISHAY SI4774DY

New Product
Si4774DY
Vishay Siliconix
N-Channel 30 V (D-S) MOSFET with Schottky Diode
FEATURES
PRODUCT SUMMARY
RDS(on) ()
ID (A)a
0.0095 at VGS = 10 V
16
0.0120 at VGS = 4.5 V
15
VDS (V)
30
Qg (Typ.)
9.5 nC
SO-8
S
1
8
D
S
2
7
D
S
3
6
D
G
4
5
D
• Halogen-free According to IEC 61249-2-21
Definition
• SkyFET Monolithic TrenchFET Gen. 
Power MOSFET and Schottky Diode
• 100 % Rg Tested
• 100 % UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Notebook PC
- System Power, Memory
• Buck Converter
• Synchronous Rectifier Switch
D
Top View
Ordering Information:
Si4774DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
Schottky Diode
G
N-Channel MOSFET
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Drain-Source Voltage
Symbol
VDS
Limit
30
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
16
TC = 70 °C
13.6
ID
TA = 25 °C
9.6b, c
50
IDM
TC = 25 °C
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
L = 0.1 mH
Single Pulse Avalanche Energy
IAS
2.3b, c
15
EAS
11.25
TC = 25 °C
mJ
5
TC = 70 °C
Maximum Power Dissipation
A
4.5
IS
TA = 25 °C
V
12b, c
TA = 70 °C
Pulsed Drain Current (t = 300 µs)
Unit
3.2
PD
TA = 25 °C
TA = 70 °C
TJ, Tstg
Operating Junction and Storage Temperature Range
W
2.5b, c
1.6b, c
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junctionto-Ambientb, d
Maximum Junctionto-Foot (Drain)
Symbol
Typ.
Max.
t  10 s
RthJA
38
50
Steady State
RthJF
20
25
Unit
°C/W
Notes:
a. Based on TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under steady state conditions is 85 °C/W.
Document Number: 67953
S11-1179-Rev. A, 13-Jun-11
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
Si4774DY
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
VDS
VGS = 0, ID = 1 mA
30
VGS(th)
VDS = VGS, ID= 1 mA
1
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
IDSS
On -State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward Transconductancea
gfs
± 100
VDS = 30 V, VGS = 0 V
0.028
0.200
VDS = 30 V, VGS = 0 V, TJ = 100 °C
2.5
20
VDS  5 V, VGS = 10 V
RDS(on)
2.3
30
V
nA
mA
A
VGS = 10 V, ID = 10 A
0.0079
0.0095
VGS = 4.5 V, ID = 7 A
0.0096
0.0120
VDS = 15 V, ID = 10 A
43

S
b
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
1025
VDS = 15 V, VGS = 0 V, f = 1 MHz
100
VDS = 15 V, VGS = 10 V, ID = 10 A
VDS = 15 V, VGS = 4.5 V, ID = 10 A
f = 1 MHz
tr
Rise Time
VDD = 15 V, RL = 1.5 
ID  10 A, VGEN = 4.5 V, Rg = 1 
td(off)
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
14.3
2.8
0.3
1.0
2.0
11
22
22
48
13
26
11
22
td(on)
8
16
13
26
14
28
9
18
VDD = 15 V, RL = 1.5 
ID  10 A, VGEN = 10 V, Rg = 1 
td(off)
tf
Fall Time
30.5
9.5
tf
tr
Rise Time
Turn-Off Delay Time
20.3
nC
3.2
td(on)
Turn-On Delay Time
pF
251

ns
Drain-Source Body Diode and Schottky Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward
Currenta
Body Diode Voltage
IS
TC = 25 °C
4.5
ISM
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
50
IS = 2 A
IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C
A
0.44
0.55
V
18
35
ns
7.5
15
nC
10
8
ns
Notes:
a. Pulse test; pulse width  300 µs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 67953
S11-1179-Rev. A, 13-Jun-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
Si4774DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
10
50
VGS = 10 V thru 4 V
8
ID - Drain Current (A)
ID - Drain Current (A)
40
30
VGS = 3 V
20
6
4
TC = 25 °C
TC = - 55 °C
2
10
TC = 125 °C
VGS = 2 V
0
0
0.5
1
1.5
2
0
0
2.5
2
4
VDS - Drain-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
5
1500
1200
0.010
Ciss
C - Capacitance (pF)
VGS = 4.5 V
0.009
0.008
VGS = 10 V
900
600
Coss
Crss
300
0.007
0
0.006
0
10
20
30
40
0
50
4
ID - Drain Current (A)
8
12
16
20
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
1.8
10
ID = 10 A
RDS(on) - On-Resistance (Normalized)
ID = 10 A
VGS - Gate-to-Source Voltage (V)
3
VGS - Gate-to-Source Voltage (V)
0.011
RDS(on) - On-Resistance (Ω)
1
8
6
VDS = 15 V
4
VDS = 20 V
VDS = 10 V
2
0
0
3.4
6.8
10.2
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 67953
S11-1179-Rev. A, 13-Jun-11
13.6
17.0
VGS = 10 V
1.6
1.4
1.2
VGS = 4.5 V
1.0
0.8
0.6
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
Si4774DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
0.040
ID = 10 A
TJ = 150 °C
0.032
RDS(on) - On-Resistance (Ω)
IS - Source Current (A)
10
TJ = 25 °C
1
0.1
0.01
0.024
0.016
TJ = 125 °C
0.008
0.001
TJ = 25 °C
0
0.0
0.2
0.4
0.6
0.8
1.0
0
2
Source-Drain Diode Forward Voltage
6
8
10
On-Resistance vs. Gate-to-Source Voltage
10-1
80
10-2
30 V
64
10-3
20 V
10
Power (W)
IR - Reverse Current (A)
4
VGS - Gate-to-Source Voltage (V)
VSD - Source-to-Drain Voltage (V)
-4
48
32
10-5
10 V
16
10-6
10-7
0
25
50
75
100
125
0
0.001
150
0.01
0.1
1
10
TJ - Temperature (°C)
Time (s)
Reverse Current (Schottky)
Single Pulse Power, Junction-to-Ambient
100
IDM Limited
100 μs
ID - Drain Current (A)
10
ID Limited
1 ms
10 ms
1
100 ms
Limited by RDS(on)*
1s
0.1
10 s
TC = 25 °C
Single Pulse
0.01
0.01
DC
BVDSS Limited
0.1
1
10
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
100
Safe Operating Area
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Document Number: 67953
S11-1179-Rev. A, 13-Jun-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
Si4774DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
20
ID - Drain Current (A)
16
12
8
4
0
0
25
50
75
100
125
150
TC - Case Temperature (°C)
6
2.0
5
1.6
4
1.2
Power (W)
Power (W)
Current Derating*
2
0.8
0.4
1
0.0
0
0
25
50
75
100
125
150
0
25
50
75
100
125
TC - Case Temperature (°C)
TA - Ambient Temperature (°C)
Power Derating, Junction-to-Foot
Power Derating, Junction-to-Ambient
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 67953
S11-1179-Rev. A, 13-Jun-11
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
Si4774DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
PDM
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 85 °C/W
0.02
3. TJM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
10
100
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
0.0001
0.001
0.01
0.1
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Foot
’Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?67953.
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Document Number: 67953
S11-1179-Rev. A, 13-Jun-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix
SOIC (NARROW): 8-LEAD
JEDEC Part Number: MS-012
8
6
7
5
E
1
3
2
H
4
S
h x 45
D
C
0.25 mm (Gage Plane)
A
e
B
All Leads
q
A1
L
0.004"
MILLIMETERS
INCHES
DIM
Min
Max
Min
Max
A
1.35
1.75
0.053
0.069
A1
0.10
0.20
0.004
0.008
B
0.35
0.51
0.014
0.020
C
0.19
0.25
0.0075
0.010
D
4.80
5.00
0.189
0.196
E
3.80
4.00
0.150
e
0.101 mm
1.27 BSC
0.157
0.050 BSC
H
5.80
6.20
0.228
0.244
h
0.25
0.50
0.010
0.020
L
0.50
0.93
0.020
0.037
q
0°
8°
0°
8°
S
0.44
0.64
0.018
0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
Document Number: 71192
11-Sep-06
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VISHAY SILICONIX
TrenchFET® Power MOSFETs
Application Note 808
Mounting LITTLE FOOT®, SO-8 Power MOSFETs
Wharton McDaniel
Surface-mounted LITTLE FOOT power MOSFETs use
integrated circuit and small-signal packages which have
been been modified to provide the heat transfer capabilities
required by power devices. Leadframe materials and
design, molding compounds, and die attach materials have
been changed, while the footprint of the packages remains
the same.
See Application Note 826, Recommended Minimum Pad
Patterns With Outline Drawing Access for Vishay Siliconix
MOSFETs, (http://www.vishay.com/ppg?72286), for the
basis of the pad design for a LITTLE FOOT SO-8 power
MOSFET. In converting this recommended minimum pad
to the pad set for a power MOSFET, designers must make
two connections: an electrical connection and a thermal
connection, to draw heat away from the package.
0.288
7.3
0.050
1.27
0.196
5.0
0.027
0.69
0.078
1.98
0.2
5.07
Figure 1. Single MOSFET SO-8 Pad
Pattern With Copper Spreading
Document Number: 70740
Revision: 18-Jun-07
0.050
1.27
0.088
2.25
0.088
2.25
0.027
0.69
0.078
1.98
0.2
5.07
Figure 2. Dual MOSFET SO-8 Pad Pattern
With Copper Spreading
The minimum recommended pad patterns for the
single-MOSFET SO-8 with copper spreading (Figure 1) and
dual-MOSFET SO-8 with copper spreading (Figure 2) show
the starting point for utilizing the board area available for the
heat-spreading copper. To create this pattern, a plane of
copper overlies the drain pins. The copper plane connects
the drain pins electrically, but more importantly provides
planar copper to draw heat from the drain leads and start the
process of spreading the heat so it can be dissipated into the
ambient air. These patterns use all the available area
underneath the body for this purpose.
Since surface-mounted packages are small, and reflow
soldering is the most common way in which these are
affixed to the PC board, “thermal” connections from the
planar copper to the pads have not been used. Even if
additional planar copper area is used, there should be no
problems in the soldering process. The actual solder
connections are defined by the solder mask openings. By
combining the basic footprint with the copper plane on the
drain pins, the solder mask generation occurs automatically.
A final item to keep in mind is the width of the power traces.
The absolute minimum power trace width must be
determined by the amount of current it has to carry. For
thermal reasons, this minimum width should be at least
0.020 inches. The use of wide traces connected to the drain
plane provides a low impedance path for heat to move away
from the device.
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APPLICATION NOTE
In the case of the SO-8 package, the thermal connections
are very simple. Pins 5, 6, 7, and 8 are the drain of the
MOSFET for a single MOSFET package and are connected
together. In a dual package, pins 5 and 6 are one drain, and
pins 7 and 8 are the other drain. For a small-signal device or
integrated circuit, typical connections would be made with
traces that are 0.020 inches wide. Since the drain pins serve
the additional function of providing the thermal connection
to the package, this level of connection is inadequate. The
total cross section of the copper may be adequate to carry
the current required for the application, but it presents a
large thermal impedance. Also, heat spreads in a circular
fashion from the heat source. In this case the drain pins are
the heat sources when looking at heat spread on the PC
board.
0.288
7.3
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SO-8
0.172
(4.369)
0.028
0.022
0.050
(0.559)
(1.270)
0.152
(3.861)
0.047
(1.194)
0.246
(6.248)
(0.711)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
APPLICATION NOTE
Return to Index
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Document Number: 72606
Revision: 21-Jan-08
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree
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Document Number: 91000
Revision: 11-Mar-11
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