VISHAY SI4288DY

Si4288DY
Vishay Siliconix
Dual N-Channel 40 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
40
RDS(on) ()
ID (A)a
0.020 at VGS = 10 V
9.2
0.023 at VGS = 4.5 V
8.6
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFETPower MOSFET
• 100 % Rg and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
Qg (Typ.)
4.9
APPLICATIONS
• CCFL Inverter
• DC/DC Converter
• HDD
D1
D2
SO-8
S1
1
8
D1
G1
2
7
D1
S2
3
6
D2
G2
4
5
D2
G1
G2
Top View
Ordering Information: Si4288DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
S1
S2
N-Channel MOSFET
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Symbol
VDS
VGS
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
ID
Pulsed Drain Current (10 µs Pulse Width)
Source-Drain Current Diode Current
Pulsed Source-Drain Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Limit
40
± 20
9.2
7.4
IS
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
A
1.6b, c
50
10
5
3.1
2
ISM
IAS
EAS
L = 0.1 mH
V
7.4b, c
5.9b, c
50
2.6
IDM
TC = 25 °C
TA = 25 °C
Unit
PD
W
2b, c
1.28b, c
- 55 to 150
TJ, Tstg
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
Maximum Junction-to-Foot (Drain)
t  10 s
Steady-State
Symbol
RthJA
RthJF
Typ.
49
30
Max.
62.5
40
Unit
°C/W
Notes:
a. Based on TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under steady state conditions is 120 °C/W.
Document Number: 67078
S10-2768-Rev. A, 29-Nov-10
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Si4288DY
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = 250 µA
40
Typ.a
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS/TJ
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
VGS(th)/TJ
Gate Threshold Voltage
Gate-Body Leakage
VDS = VGS, ID= 250 µA
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currentb
ID(on)
Drain-Source On-State Resistanceb
Forward Transconductanceb
ID = 250 µA
VGS(th)
RDS(on)
gfs
V
49
mV/°C
- 5.2
2.5
V
VDS = 0 V, VGS = ± 20 V
100
nA
VDS = 40 V, VGS = 0 V
1
VDS = 40 V, VGS = 0 V, TJ = 55 °C
10
VDS = 5 V, VGS = 10 V
1.2
20
µA
A
VGS = 10 V, ID = 10 A
0.0165
0.0200
VGS = 4.5 V, ID = 7 A
0.019
0.023
VDS = 15 V, ID = 10 A
35
VDS = 20 V, VGS = 0 V, ID = 1 MHz
100
VDS = 20 V, VGS = 10 V, ID = 10 A
10
15
4.9
7.4

S
Dynamica
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Rg
580
42
VDS = 20 V, VGS = 4.5 V, ID = 10 A
td(off)
1.5
f = 1 MHz
VDD = 20 V, RL = 2 
ID  10 A, VGEN = 10 V, Rg = 1 
0.6
2.7
5.4
7
14
9
18
16
32
tf
8
16
td(on)
12
24
10
20
tr
td(off)
nC
1.5
td(on)
tr
pF
VDD = 20 V, RL = 2 
ID  10 A, VGEN = 4.5 V, Rg = 1 
tf
13
26
8
16

ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Currenta
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
TC = 25 °C
2.6
50
IS = 3 A
IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C
A
0.77
1.2
V
15
30
ns
7.5
15
nC
9
6
ns
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width  300 µs, duty cycle  2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 67078
S10-2768-Rev. A, 29-Nov-10
Si4288DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
10
50
V GS = 10 V thru 4 V
8
ID - Drain Current (A)
ID - Drain Current (A)
40
30
20
V GS = 3 V
6
4
T C = 25 °C
2
10
T C = 125 °C
V GS = 2 V
0.5
1.0
1.5
2.0
T C = - 55 °C
0
0
2.5
1
2
3
4
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.025
750
0.022
600
5
Ciss
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
0
0.0
V GS = 4.5 V
0.019
V GS = 10 V
0.016
450
300
0.013
150
0.010
0
Coss
Crss
0
10
20
30
40
50
0
24
32
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
Capacitance
40
2.0
ID = 8 A
ID = 10 A
V GS = 10 V
1.7
V DS = 20 V
6
V DS = 10 V
V DS = 30 V
4
(Normalized)
8
RDS(on) - On-Resistance
VGS - Gate-to-Source Voltage (V)
16
On-Resistance vs. Drain Current
10
1.4
V GS = 4.5 V
1.1
0.8
2
0
0.0
8
2.1
4.2
6.3
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 67078
S10-2768-Rev. A, 29-Nov-10
8.4
10.5
0.5
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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Si4288DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
0.080
10
0.064
RDS(on) - On-Resistance (Ω)
IS - Source Current (A)
ID = 10 A
T J = 150 °C
1
0.1
T J = 25 °C
T J = 125 °C
0.032
T J = 25 °C
0.016
0.01
0.001
0.0
0.048
0.000
0.2
0.4
0.6
0.8
1.0
0
1.2
1
2
3
4
5
6
7
8
9
10
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.4
50
0.2
0.0
Power (W)
VGS(th) Variance (V)
40
- 0.2
ID = 5 mA
30
20
- 0.4
ID = 250 μA
10
- 0.6
- 0.8
- 50
- 25
0
25
50
75
100
125
0
0.001
150
0.01
TJ - Temperature (°C)
0.1
1
10
Time (s)
Single Pulse Power, Junction-to-Ambient
Threshold Voltage
100
Limited by RDS(on)*
ID - Drain Current (A)
10
1 ms
1
10 ms
100 ms
0.1
TA = 25 °C
Single Pulse
0.01
0.01
BVDSS Limited
1s
10 s
DC
100
0.1
1
10
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
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Document Number: 67078
S10-2768-Rev. A, 29-Nov-10
Si4288DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
10
ID - Drain Current (A)
8
6
4
2
0
0
25
50
75
100
125
150
TC - Case Temperature (°C)
4.0
1.5
3.2
1.2
2.4
0.9
Power (W)
Power (W)
Current Derating*
1.6
0.6
0.3
0.8
0.0
0.0
0
25
50
75
100
125
TC - Case Temperature (°C)
Power Derating, Junction-to-Foot
150
0
25
50
75
100
125
150
TA - Ambient Temperature (°C)
Power Derating, Junction-to-Ambient
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 67078
S10-2768-Rev. A, 29-Nov-10
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Si4288DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
PDM
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = R thJA = 120 °C/W
3. T JM - TA = PDMZthJA(t)
0.01
10 -4
Single Pulse
10 -3
4. Surface Mounted
10 -2
10 -1
1
100
10
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?67078.
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Document Number: 67078
S10-2768-Rev. A, 29-Nov-10
Package Information
Vishay Siliconix
SOIC (NARROW): 8-LEAD
JEDEC Part Number: MS-012
8
6
7
5
E
1
3
2
H
4
S
h x 45
D
C
0.25 mm (Gage Plane)
A
e
B
All Leads
q
A1
L
0.004"
MILLIMETERS
INCHES
DIM
Min
Max
Min
Max
A
1.35
1.75
0.053
0.069
A1
0.10
0.20
0.004
0.008
B
0.35
0.51
0.014
0.020
C
0.19
0.25
0.0075
0.010
D
4.80
5.00
0.189
0.196
E
3.80
4.00
0.150
e
0.101 mm
1.27 BSC
0.157
0.050 BSC
H
5.80
6.20
0.228
0.244
h
0.25
0.50
0.010
0.020
L
0.50
0.93
0.020
0.037
q
0°
8°
0°
8°
S
0.44
0.64
0.018
0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
Document Number: 71192
11-Sep-06
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VISHAY SILICONIX
TrenchFET® Power MOSFETs
Application Note 808
Mounting LITTLE FOOT®, SO-8 Power MOSFETs
Wharton McDaniel
Surface-mounted LITTLE FOOT power MOSFETs use
integrated circuit and small-signal packages which have
been been modified to provide the heat transfer capabilities
required by power devices. Leadframe materials and
design, molding compounds, and die attach materials have
been changed, while the footprint of the packages remains
the same.
See Application Note 826, Recommended Minimum Pad
Patterns With Outline Drawing Access for Vishay Siliconix
MOSFETs, (http://www.vishay.com/ppg?72286), for the
basis of the pad design for a LITTLE FOOT SO-8 power
MOSFET. In converting this recommended minimum pad
to the pad set for a power MOSFET, designers must make
two connections: an electrical connection and a thermal
connection, to draw heat away from the package.
0.288
7.3
0.050
1.27
0.196
5.0
0.027
0.69
0.078
1.98
0.2
5.07
Figure 1. Single MOSFET SO-8 Pad
Pattern With Copper Spreading
Document Number: 70740
Revision: 18-Jun-07
0.050
1.27
0.088
2.25
0.088
2.25
0.027
0.69
0.078
1.98
0.2
5.07
Figure 2. Dual MOSFET SO-8 Pad Pattern
With Copper Spreading
The minimum recommended pad patterns for the
single-MOSFET SO-8 with copper spreading (Figure 1) and
dual-MOSFET SO-8 with copper spreading (Figure 2) show
the starting point for utilizing the board area available for the
heat-spreading copper. To create this pattern, a plane of
copper overlies the drain pins. The copper plane connects
the drain pins electrically, but more importantly provides
planar copper to draw heat from the drain leads and start the
process of spreading the heat so it can be dissipated into the
ambient air. These patterns use all the available area
underneath the body for this purpose.
Since surface-mounted packages are small, and reflow
soldering is the most common way in which these are
affixed to the PC board, “thermal” connections from the
planar copper to the pads have not been used. Even if
additional planar copper area is used, there should be no
problems in the soldering process. The actual solder
connections are defined by the solder mask openings. By
combining the basic footprint with the copper plane on the
drain pins, the solder mask generation occurs automatically.
A final item to keep in mind is the width of the power traces.
The absolute minimum power trace width must be
determined by the amount of current it has to carry. For
thermal reasons, this minimum width should be at least
0.020 inches. The use of wide traces connected to the drain
plane provides a low impedance path for heat to move away
from the device.
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APPLICATION NOTE
In the case of the SO-8 package, the thermal connections
are very simple. Pins 5, 6, 7, and 8 are the drain of the
MOSFET for a single MOSFET package and are connected
together. In a dual package, pins 5 and 6 are one drain, and
pins 7 and 8 are the other drain. For a small-signal device or
integrated circuit, typical connections would be made with
traces that are 0.020 inches wide. Since the drain pins serve
the additional function of providing the thermal connection
to the package, this level of connection is inadequate. The
total cross section of the copper may be adequate to carry
the current required for the application, but it presents a
large thermal impedance. Also, heat spreads in a circular
fashion from the heat source. In this case the drain pins are
the heat sources when looking at heat spread on the PC
board.
0.288
7.3
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SO-8
0.172
(4.369)
0.028
0.022
0.050
(0.559)
(1.270)
0.152
(3.861)
0.047
(1.194)
0.246
(6.248)
(0.711)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
APPLICATION NOTE
Return to Index
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Document Number: 72606
Revision: 21-Jan-08
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
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operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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Document Number: 91000
Revision: 11-Mar-11
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