Si4720 Vishay Siliconix Battery Disconnect Switch DESCRIPTION The Si4720CY is two level-shifted P-Channel MOSFETs. Operating together, these MOSFETs can be used as a reverse blocking switch for battery disconnect applications. It is a solution for multiple battery technology designs or designs that require isolation from the power bus during charging. The Si4720CY is available in a 16-pin SOIC package and is rated for the commercial temperature range of - 25 °C to 85 °C. FEATURES • Solution for Bi-Directional Blocking • • • • • • 6 V to 30 V Operation Ground Referenced Logic Level Inputs Integrated Low RDS(on) MOSFET Level-Shifted Gate Drive with Internal MOSFET Two Independent Inputs Ultra Low Power Consumption in Off State (Leakage Current Only) • Logic Supply Voltage is Not Required FUNCTIONAL BLOCK DIAGRAM 6 IN1 5 9, 10, 11 ESD GND1 Logic and Gate Drive G1 D1 Level Shift 12 VGS Limiter 7, 8 S1 Half a circuit shown here. Document Number: 70664 S11-1185-Rev. C, 13-Jun-11 www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4720 Vishay Siliconix ABSOLUTE MAXIMUM RATINGS Parameter Symbol Voltage Referenced to GND VS, VD Limit a Unit - 0.3 to 32 VSD - 0.3 to 30 VIN1, VIN2 - 0.3 to 15 VGS V 20 Storage Temperature - 55 to 150 Power Dissipationb t = 10 s 2.5 t = Steady State 1.5 °C W Notes: a. VSD 30 VDC. b. Device mounted with all leads soldered to 1" x 1" FR4 with laminated copper PC board. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. RECOMMENDED OPERATING RANGE Parameter Symbol Limit VS, VD Unit 6 to 30 VIN1, VIN2 V 0 to 13.2 IDS 0 to 6 A Operating Temperature Range - 25 to 85 Junction Temperature - 25 to 150 °C This device has a maximum recommended operating junction temperature of 85 °C. This temperature limit is used for electrical specifications such as logic transition voltages only and is not a reliability limit. The device can be used with junction temperatures up to 150 °C if relaxed specifications can be tolerated, although limits for these specifications may not be given. Performance curves can be used to give an indication of specifications at higher temperatures, but are not guaranteed. SPECIFICATIONS Parameter On-Resistance Leakage Current Symbol Temp.a rDS VS = 10 V, ID = 1 A, VIN = H Room IDS(off) VDS = 10 V IS(off) Supply Current IS(on) Input Voltage Low VINL Input Voltage High VINH Input Leakage Current IINH Turn-On Delay Turn-Off Delay IN to D or S Limits Test Conditions Unless Otherwise Specified tON(IN) tOFF(IN) Break-Before-Maked tBBM VS = 21 V VS = 10 and VS = 21 VIN = 5 V VS = 10 V, RL = 5 , Figure 1 Typ.c Max.b 0.0155 0.020 Room 1 Room 1 Room 1.1 Full Full Room 1 5 2.9 10 Room 1.5 2.1 Room 1.05 Room 1.3 2.5 Room 50 100 10.2 Rise Time tRISE tFALL Voltage Across pin 6 and 7 VGS VS = 30 Room Forward Diode VSD ID = - 1 A Room 2.2 Unit µA 6 2.5 Full Fall Time VS = 10 V, RL = 5 , Figure 1 Min.b 18 1.1 V µA µs ns V Notes: a. Room = 25 °C, full = as determined by the operating temperature suffix. b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. Guaranteed by design, not subject to production testing. www.vishay.com 2 Document Number: 70664 S11-1185-Rev. C, 13-Jun-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4720 Vishay Siliconix TIMING DIAGRAMS 10 V SOURCE 50 % 50 % VIN 0V 90 % DRAIN VD 90 % 10 % 10 % 5 tON(IN) tOFF(IN) tr tf Figure 1. SO-16 PIN CONFIGURATION AND TRUTH VIN1 VIN2 Switch 1 Switch 2 D2 1 16 S2 0 0 Off Off D2 2 15 S2 0 1 Off On 1 0 On Off 1 1 On On D2 3 14 G2(OUT) GND2 4 13 IN2 IN1 5 12 GND1 G1(OUT) 6 11 D1 S1 7 10 D1 S1 8 9 D1 Top View Order Number: Si4720CY PIN DESCRIPTION (Subject to Change) Pin Number Symbol Description 1, 2, 3 D2 Drain connection for MOSFET-2. 4, 12 GND Ground 5 IN1 Logic input, IN1. High level turns on the switch. 6 G1(OUT) Gate output to MOSFET-1. 7, 8 S1 Source connection for MOSFET-1. 9, 10, 11 D1 Drain connection for MOSFET-1. 13 IN2 Logic input, IN2. High level turns on the switch. 14 G2(OUT) Gate output to MOSFET-2. 15, 16 S2 Source connection for MOSFET-2. Document Number: 70664 S11-1185-Rev. C, 13-Jun-11 www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4720 Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C unless noted) 0.10 r DS(on) - Drain-Source On-Resistance () RDS(on) - Drain-Source On-Resistance () 0.030 0.025 0.020 VS = 10 V 0.015 0.010 0.005 0.08 0.06 0.04 IS = 1 A 0.02 0.000 0 0 1 2 3 4 5 0 6 2 4 6 8 IS (A) 10 12 14 16 18 20 VS (V) On-Resistance vs. Drain Current On-Resistance vs. Source Voltage 2500 1.8 VS = 10 V IS = 1 A 1.6 C OSS (pF) R DS(on) - On-Resistance (Normalized) 2000 1.4 1.2 1.0 1500 1000 VIN = 0 V 0.8 500 0.6 0.4 - 50 0 - 25 0 25 50 75 100 125 150 0 5 10 15 20 25 30 VS (V) TJ - Junction Temperature (°C) Normalized On-Resistance vs. Junction Temperature Output Capacitance vs. Source Voltage 10.000 10.000 TJ = 150 °C TJ = 150 °C 1.000 1.000 I S ( µA) I S ( µA) TJ = 25 °C 0.100 0.100 TJ = 25 °C 0.010 0.010 0.001 0.001 0 5 10 15 VS (V) 20 25 Off-Supply Current vs. Source Voltage www.vishay.com 4 30 0 5 10 15 20 25 30 VS (V) On-Supply Current vs. Source Voltage Document Number: 70664 S11-1185-Rev. C, 13-Jun-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4720 Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C unless noted) 1.8 10 I S - Source Current (A) 1.6 V IN Trip Point TJ = 150 °C TJ = 25 °C 1.4 VS = 21 V 1.2 VS = 10 V 1.0 0.8 - 50 1 0 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V) 1.4 3.6 1.8 3.2 1.6 t d(off) (s) t d(on) (µs) 75 100 125 150 VS = 10 V Rl = 5 2.8 2.4 1.4 1.2 - 25 0 25 50 75 100 125 1.0 - 50 150 - 25 0 25 50 75 100 125 Temperature (°C) Temperature (°C) Turn-On Delay vs. Temperature Turn-off Delay vs. Temperature 150 80 1.8 VS = 10 V Rl = 5 70 VS = 10 V Rl = 5 60 t fall (ns) 1.4 t rise (µs) 50 2.0 VS = 10 V Rl = 5 1.2 50 1.0 40 0.8 30 0.6 - 50 25 Input Voltage Trip Point vs. Temperature 4.0 1.6 0 TA = Ambient Temperature (°C) Drain-Source Diode Forward Voltage 2.0 - 50 - 25 - 25 0 25 50 75 100 125 150 20 - 50 - 25 0 25 50 75 100 Temperature (°C) Temperature (°C) Rise Time vs. Temperature Fall Time vs. Temperature Document Number: 70664 S11-1185-Rev. C, 13-Jun-11 125 150 www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4720 Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C unless noted) 80 Power (W) 60 40 20 0 0.01 0.1 1 Time (sec) 10 100 Single Pulse Power 2 1 Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 125 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 0.01 10-4 4. Surface Mounted 10-3 10-2 10-1 1 10 100 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient www.vishay.com 6 Document Number: 70664 S11-1185-Rev. C, 13-Jun-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4720 Vishay Siliconix APPLICATION DRAWINGS Si4720CY Si4435DY D1 S1 Battery 1 G1 Drive Logic In 1 Si4435DY D2 S2 DC/DC Battery 2 G2 Drive Logic In 2 Figure 2. S1 S2 G1 G2 Drive Si4720CY D1 Drive D2 Logic In Battery 2 DC/DC S1 Si4720CY G1 S2 Drive D1 Battery 1 G2 Drive D2 Logic In Figure 3. Document Number: 70664 S11-1185-Rev. C, 13-Jun-11 www.vishay.com 7 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4720 Vishay Siliconix APPLICATION DRAWINGS 1/2 Si4720 AC/DC Display Power 1/2 Si4720 Charger Logic In 7 - 30 V 3 - 5 Cell Li-Ion Logic In Drive Drive DC/DC 5V 3.3 V Figure 4. Low-Cost Laptop PC 1/2 Si4720 1/2 Si4720 Display Power AC/DC Charger Logic In Logic In Drive Drive DC/DC 7 - 30 V 3 - 5 Cell Li-Ion 5V 3.3 V 1/2 Si4720 1/2 Si4720 Si6415 Logic In 7 - 30 V 3 - 5 Cell Li-Ion Drive Logic In Drive 1/2 Si4720 1/2 Si4720 Si6415 Logic In Drive Logic In Drive Figure 5. High-Performance Laptop PC Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?70664. www.vishay.com 8 Document Number: 70664 S11-1185-Rev. C, 13-Jun-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix SOIC (NARROW): 16ĆLEAD JEDEC Part Number: MS-012 MILLIMETERS 16 15 14 13 12 11 10 Dim A A1 B C D E e H L Ĭ 9 E 1 2 3 4 5 6 7 8 INCHES Min Max Min Max 1.35 1.75 0.053 0.069 0.10 0.20 0.004 0.008 0.38 0.51 0.015 0.020 0.18 0.23 0.007 0.009 9.80 10.00 0.385 0.393 3.80 4.00 0.149 0.157 1.27 BSC 0.050 BSC 5.80 6.20 0.228 0.244 0.50 0.93 0.020 0.037 0_ 8_ 0_ 8_ ECN: S-03946—Rev. F, 09-Jul-01 DWG: 5300 H D C All Leads e Document Number: 71194 02-Jul-01 B A1 L Ĭ 0.101 mm 0.004 IN www.vishay.com 1 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1