SBYV27-50 thru SBYV27-200 Vishay General Semiconductor Soft Recovery Ultrafast Plastic Rectifier FEATURES • Ultrafast reverse recovery time • Low forward voltage drop • Low leakage current • Low switching losses, high efficiency • High forward surge capability DO-204AC (DO-15) • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC TYPICAL APPLICATIONS PRIMARY CHARACTERISTICS For use in high frequency rectification and freewheeling application in switching mode converters and inverters for consumer, computer and telecommunication. IF(AV) 2.0 A VRRM 50 V to 200 V IFSM 50 A MECHANICAL DATA trr 15 ns VF 0.88 V Case: DO-204AC (DO-15) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade TJ max. 150 °C Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test per Polarity: Color band denotes cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL SBYV27-50 SBYV27-100 SBYV27-150 SBYV27-200 UNIT Maximum repetitive peak reverse voltage VRRM 50 100 150 200 V Maximum RMS voltage VRMS 35 70 105 140 V Maximum DC blocking voltage VDC 50 100 150 200 V Minimum reverse breakdown voltage at 100 μA VBR 55 110 165 220 V Maximum average forward rectified current 0.375" (9.5 mm) lead length at TL = 85 °C IF(AV) 2.0 A Peak forward surge current 10 ms single half sine-wave superimposed on rated load IFSM 50 A TJ, TSTG - 55 to + 150 °C Operating junction and storage temperature range Document Number: 88736 Revision: 22-Oct-09 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 1 SBYV27-50 thru SBYV27-200 Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL TJ = 25 °C Maximum instantaneous forward voltage SBYV27-50 SBYV27-100 SBYV27-200 UNIT 1.07 VF (1) 3.0 A V TJ = 150 °C 0.88 TA = 25 °C Maximum DC reverse current at rated DC blocking voltage SBYV27-150 5.0 IR μA TA = 100 °C 200 Maximum reverse recovery time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A trr 15 ns Typical junction capacitance 4.0 V, 1 MHz CJ 15 pF Note (1) Pulse test: 300 μs pulse width, duty cycle ≤ 2 % THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Typical thermal resistance RθJA SBYV27-50 SBYV27-100 (1) SBYV27-150 SBYV27-200 UNIT 45 °C/W Note Thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length (1) ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE SBYV27-200-E3/54 0.404 54 4000 13" diameter paper tape and reel SBYV27-200-E3/73 0.404 73 2000 Ammo pack packaging RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 60 Resistive or Inductive Load 0.375" (9.5 mm) Lead Length TL Lead Temperature 2.5 2.0 1.5 1.0 TA, Ambient Temperature P.C.B. Mounted 0.47" x 0.47" (12 mm x 12 mm) Copper Pads 0.5 Peak Forward Surge Current (A) Average Forward Rectified Current (A) 3.0 TJ = 150 °C 10 ms Single Half Sine-Wave 50 40 30 20 10 0 0 0 25 50 75 100 125 150 175 1 100 10 Temperature (°C) Number of Cycles at 50 Hz Fig. 1 - Maximum Forward Current Derating Curves Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current www.vishay.com 2 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 88736 Revision: 22-Oct-09 SBYV27-50 thru SBYV27-200 Vishay General Semiconductor 60 10 Recovered Store Change/Reverse Recovery Time, nC/ns Instantaneous Forward Current (A) 100 TJ = 150 °C 1 TJ = 125 °C TJ = 100 °C 0.1 TJ = 25 °C 0.01 0.2 50 dI/dt = 150 A/μs dI/dt = 100 A/μs 40 dI/dt = 20 A/μs dI/dt = 50 A/μs dI/dt = 100 A/μs dI/dt = 150 A/μs dI/dt = 50 A/μs 30 20 dI/dt = 20 A/μs 10 trr Qrr 0 0.4 0.6 0.8 1.0 1.2 1.4 0 25 50 75 100 125 150 175 Instantaneous Forward Voltage (V) Junction Temperature (°C) Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 5 - Reverse Switching Charateristics 100 Junction Capacitance (pF) 10 000 Instantaneous Reverse Leakage Current (μA) IF = 2.0 A VR = 30 V 1000 TJ = 150 °C TJ = 125 °C 100 TJ = 100 °C 10 1 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 10 TJ = 25 °C 0.1 0 20 40 60 80 1 0.1 100 1 10 100 Percent of Rated Peak Reverse Voltage (%) Reverse Voltage (V) Fig. 4 - Typical Reverse Leakage Characteristics Fig. 6 - Typical Junction Capacitance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-204AC (DO-15) 0.034 (0.86) 0.028 (0.71) DIA. 1.0 (25.4) MIN. 0.300 (7.6) 0.230 (5.8) 0.140 (3.6) 0.104 (2.6) DIA. 1.0 (25.4) MIN. Document Number: 88736 Revision: 22-Oct-09 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 3 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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