PTB20111 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .400 2L FLG DESCRIPTION: The ASI PTB20111 is Designed for General Purpose Class AB Power Amplifier Applications up to 900 MHz. FEATURES: • 25 W, 860-900 MHz • Silicon Nitride Passivated • Omnigold™ Metalization System MAXIMUM RATINGS IC 20 A VCBO 65 V PDISS 159 W @ TC = 25 °C TJ -40 °C to +150 °C TSTG -40 °C to +150 °C θJC 1.1 °C/W CHARACTERISTICS SYMBOL 1 = COLLECTOR 2 = EMITTER 3 = BASE TC = 25 °C NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 100 mA 25 V BVCES IC = 100 mA 55 V BVEBO IE = 5.0 mA 3.5 V hFE VCE = 5.0 V IC = 1.0 A PG ηC VCC = 25 V ICQ = 200 mA POUT = 85 W f = 900 MHz VCC = 25 V ICQ = 200 mA POUT = 60 W f = 900 MHz Ψ 20 8.5 50 100 9.5 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. --dB % 10:1 --- REV. A 1/1